Renesas HAF2001-90-E

Overview

HAF2001-90-E from Renesas Electronics is a silicon N-channel MOSFET power switch with integrated over-temperature shutdown, rated for 60 V V_DSS, 20 A continuous drain current, and 50 W channel dissipation in TO-220AB package. It operates with logic-level gate drive (3.5–13 V), features latch-type thermal shutdown at 175 °C junction temperature, and is used in industrial power supplies and motor control circuits requiring short-circuit robustness.

For engineers reviewing the HAF2001-90-E datasheet, HAF2001-90-E pinout, HAF2001-90-E application, or HAF2001-90-E equivalent, key selection criteria include its built-in thermal shutdown behavior, R_DS(on) of 30–43 mΩ at V_GS = 10 V, TTL-compatible input thresholds, body-diode reverse recovery time of 110 ns, and latch-type recovery requirement (0 V gate reset).

Technical Context

The HAF2001-90-E integrates a temperature-sensing circuit and latch-based shutdown logic directly in the gate region, triggering irreversible gate voltage cutoff above 175 °C channel temperature. Its operation requires full gate discharge to reset after shutdown - no partial voltage recovery suffices.

This MOSFET supports logic-level drive with VIH = 3.5 V and VIL = 1.2 V, enabling direct interface with 3.3 V/5 V microcontrollers. Its body-drain diode exhibits V_DF = 1.0 V at 20 A and trr = 110 ns under 50 A/µs di/dt, making it suitable for freewheeling in inductive switching applications.

Key Specifications

Pinout & Package

Package: TO-220AB (RENESAS code PRSS0004AC-A), through-hole, 3-pin, isolated tab (drain-connected), 1.8 g mass, JEITA SC-46 standard.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar power switching applications.

Compared with STP20NF06L and IRFZ44NPBF, the HAF2001-90-E uniquely delivers autonomous, latch-type thermal protection in a standard TO-220AB footprint - reducing BOM count and eliminating design uncertainty around thermal fault response timing and reliability.

Availability

HAF2001-90-E is available at Aetrix Electronics and suitable for industrial power supplies, DC motor controllers, programmable load switches, and overload-protected lighting ballasts requiring stable component supply across multi-year production cycles.

Supply support for HAF2001-90-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog and power devices, and SoCs for industrial, automotive, and infrastructure markets.

The HAF2001-90-E belongs to Renesas' Silicon N-Channel MOS FET Series for power switching, designed specifically for high-reliability industrial applications demanding intrinsic thermal fault protection without external circuitry.

FAQ

What is the gate voltage range required to fully turn on the HAF2001-90-E?

The HAF2001-90-E achieves full enhancement between V_GS = 3.5 V and 13 V. At V_GS = 4 V, R_DS(on) is 50–65 mΩ; at V_GS = 10 V, it drops to 30–43 mΩ. Operation below 3.5 V results in incomplete turn-on and excessive conduction loss - the device is not specified for sub-3.5 V logic drive. The HAF2001-90-E therefore supports direct interface with 3.3 V and 5 V microcontrollers without level-shifting.

How does the latch-type over-temperature shutdown work in the HAF2001-90-E?

When the junction temperature reaches 175 °C, the HAF2001-90-E's internal sensing circuit triggers a latch that forces the gate voltage to zero, turning the MOSFET off permanently until the gate is actively discharged to 0 V. Unlike auto-recovery thermal protection, this latch prevents reactivation during cooling transients - ensuring the fault condition is fully cleared before resuming operation. The HAF2001-90-E requires explicit gate reset, not just temperature reduction.

Can the HAF2001-90-E be used in high-frequency PWM applications?

The HAF2001-90-E has documented switching times: t_d(on) = 7.5 µs, t_r = 29 µs, t_d(off) = 34 µs, and t_f = 26 µs at I_D = 5 A, V_GS = 5 V, and R_L = 6 Ω. These values limit practical PWM operation to ≤20 kHz for efficient thermal management. Higher frequencies increase switching loss disproportionately due to its relatively slow fall and turn-off delay - the HAF2001-90-E is optimized for robustness, not speed.

What is the maximum allowable case temperature for continuous operation of the HAF2001-90-E?

The HAF2001-90-E specifies a maximum channel temperature (T_ch) of 150 °C and storage temperature range of –55 to +150 °C. Its power derating curve shows linear reduction from 50 W at T_c = 25 °C to 0 W at T_c ≈ 150 °C. For continuous 20 A operation, the case temperature must remain ≤75 °C per the derating plot - exceeding this risks premature thermal shutdown or accelerated wear. The HAF2001-90-E thus requires adequate heatsinking in sustained-load applications.

Is the drain tab of the HAF2001-90-E electrically isolated from the PCB mounting surface?

No - the drain (Pins 2 and 4) is internally connected to the metal tab of the TO-220AB package. This tab must be electrically insulated from the PCB heatsink plane using mica washers or silicone thermal pads unless the system design intentionally references the drain to chassis ground. Failure to isolate will cause short circuits. The HAF2001-90-E's package outline explicitly labels the tab as drain-connected, confirming non-isolated construction.