Renesas HAF2015RJ-EL-E

Overview

HAF2015RJ-EL-E from Renesas Electronics is a silicon N-channel MOSFET power switch with integrated overtemperature shutdown, logic-level gate drive (3.5–12 V), 60 V V_DSS, 2 A continuous drain current, and 130 mΩ typical R_DS(on) at V_GS = 5 V - designed for protected DC load switching in industrial control and power management systems.

For engineers reviewing the HAF2015RJ-EL-E datasheet, HAF2015RJ-EL-E pinout, HAF2015RJ-EL-E application, or HAF2015RJ-EL-E equivalent, key selection criteria include thermal shutdown behavior (T_sd = 175°C, hysteresis = 120°C), short-circuit endurance, SOP-8 package compatibility, and gate-drive voltage margin for microcontroller interfacing.

Technical Context

This dual-MOSFET device integrates two independent N-channel power switches in a single SOP-8 package, each featuring a dedicated on-chip temperature-sensing circuit and self-return gate-shutdown logic. The shutdown mechanism activates when junction temperature exceeds 175°C and resets after cooling by ≥120°C hysteresis.

It supports logic-level operation down to 3.5 V gate voltage, exhibits low 130 mΩ R_DS(on) at 5 V drive, and delivers robust transient performance with 4 A peak drain current capability and 55 ns body-diode reverse recovery time - enabling reliable operation in pulsed-load and fault-prone environments.

Key Specifications

Pinout & Package

Package: SOP-8 (FP-8DA), JEITA code P-SOP8-3.95 × 4.9-1.27, 0.085 g typical mass, lead-free Ni/Pd/Au plating.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar power switching applications.

Compared with HAF2015RJ-EL-E, the NVMFS5C404NL offers lower conduction loss but adds design complexity for thermal safety, while the SSM6N38NU provides dual-channel integration without autonomous protection - making HAF2015RJ-EL-E uniquely suited for applications requiring self-contained, hardware-level fault resilience.

Availability

HAF2015RJ-EL-E is available at Aetrix Electronics and suitable for industrial automation, automotive body electronics, smart power distribution, and medical diagnostic equipment requiring stable component supply and long-term manufacturability.

Supply support for HAF2015RJ-EL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for industrial, automotive, and infrastructure markets.

The HAF2015RJ-EL-E belongs to Renesas' Silicon N-Channel MOS FET Series targeting protected DC power switching - engineered for reliability in harsh environments where thermal runaway and short-circuit events must be mitigated at the device level.

FAQ

What is the maximum junction temperature before HAF2015RJ-EL-E initiates thermal shutdown?

HAF2015RJ-EL-E initiates automatic gate shutdown when its internal junction temperature reaches 175°C, as measured by the on-chip temperature sensing circuit. This threshold is fixed and not user-adjustable. Once triggered, the device remains off until junction temperature falls by at least 120°C (hysteresis), ensuring stable reactivation only after adequate cooling. This behavior is verified per Renesas datasheet REJ03G1141-0300 Rev.3.00.

Can HAF2015RJ-EL-E be driven directly by a 3.3 V microcontroller GPIO?

Yes, HAF2015RJ-EL-E supports logic-level operation starting at 3.5 V gate voltage (V_OP min), making it compatible with standard 3.3 V CMOS outputs. At V_GS = 3.5 V, it delivers ≥0.7 A drain current with R_DS(on) remaining within specification. No external gate driver is required, though layout should minimize gate loop inductance to ensure clean switching in noisy environments.

Does HAF2015RJ-EL-E have separate drain pins for each internal MOSFET?

No, HAF2015RJ-EL-E features a shared drain configuration: pins 5, 6, 7, and 8 are internally connected to form a single high-current drain node. The device contains two independent N-channel MOSFETs sharing one drain and one source (pins 1 and 3), with separate gates (pins 2 and 4). This architecture enables dual-gate control of a common load path - confirmed in the "Outline" diagram and pin function table of the HAF2015RJ-EL-E datasheet.

What is the typical R_DS(on) of HAF2015RJ-EL-E at 10 V gate drive?

At V_GS = 10 V and I_D = 1 A, the typical static drain-to-source on-state resistance of HAF2015RJ-EL-E is 110 mΩ, with a maximum of 160 mΩ across process and temperature variation. This value is specified in the Electrical Characteristics table (page 3) of the official Renesas datasheet REJ03G1141-0300 Rev.3.00 and reflects improved channel conductivity versus the 130 mΩ typical value at 5 V drive.

Is HAF2015RJ-EL-E qualified for automotive applications per AEC-Q101?

No, HAF2015RJ-EL-E is not AEC-Q101 qualified. Renesas classifies it as a "Standard" quality grade product intended for industrial, office, and consumer equipment - not transportation or safety-critical systems. Its datasheet explicitly states suitability for computers, communications equipment, and industrial robots, and cautions against use in automotive applications unless separately validated by the customer. For automotive-grade alternatives, consult Renesas' AEC-Q101-certified power MOSFET portfolio.