Renesas HAF2026RJ-EL-E

Overview

HAF2026RJ-EL-E from Renesas Electronics is a silicon N-channel power MOSFET with integrated overtemperature shutdown and current-limiting protection, designed for logic-level gate drive (3.5–12 V), 60 V drain-source breakdown, 0.6 A continuous drain current, and 200 mΩ typical R_DS(on) at V_GS = 5 V - used in low-power DC load switching applications such as fan control and LED driver protection circuits.

For engineers reviewing the HAF2026RJ-EL-E datasheet, HAF2026RJ-EL-E pinout, HAF2026RJ-EL-E application, or HAF2026RJ-EL-E equivalent, this page delivers verified thermal shutdown behavior, latch-type recovery requirement, SOP-8 package mapping, and real-world safe operating area limits derived from Renesas' R07DS0122EJ0300 preliminary datasheet.

Technical Context

This dual-MOSFET device integrates two independent N-channel channels in one SOP-8 package, each with dedicated temperature-sensing circuitry, gate-shutdown latching, and current-limiting functionality. Its thermal shutdown activates at 175°C channel temperature and requires full gate voltage removal (0 V recovery) to reset.

It operates under logic-level gate drive (V_OP = 3.5–12 V), supports repetitive avalanche energy up to 1.54 mJ at T_c = 25°C, and exhibits 11 µs rise time and 1 µs fall time under standard switching conditions (V_GS = 5 V, I_D = 0.5 A, R_L = 60 Ω).

Key Specifications

Pinout & Package

Package: SOP-8 (FP-8DAV), Renesas code PRSP0008DD-D; surface-mount, 3.95 × 4.9 mm footprint, 1.27 mm lead pitch, Ni/Pd/Au plating.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar protected power switching applications.

Compared with ROHM BD7601GUL and Toshiba TPW8R503PL, the HAF2026RJ-EL-E uniquely combines dual-channel integration, logic-level operation, and autonomous latch-type thermal shutdown - reducing BOM count and firmware dependency in space-constrained, safety-conscious DC load switching.

Availability

HAF2026RJ-EL-E is available at Aetrix Electronics and suitable for fan speed control, LED load protection, USB power switching, low-power sensor actuation, and industrial DC load management requiring stable component supply and long-term lifecycle support.

Supply support for HAF2026RJ-EL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for industrial, automotive, and infrastructure markets.

The HAF2026RJ-EL-E belongs to Renesas' protected power MOSFET product line, engineered for self-contained, logic-driven load switching in cost-sensitive, reliability-critical embedded systems without external protection circuitry.

FAQ

What is the gate voltage range required to fully turn on the HAF2026RJ-EL-E?

The HAF2026RJ-EL-E achieves full enhancement between 3.5 V and 12 V gate-to-source voltage, with typical R_DS(on) of 200 mΩ at 5 V and 150 mΩ at 10 V. Its V_GS(off) range (1.4–2.5 V) ensures compatibility with 3.3 V logic outputs while maintaining noise immunity below 1.2 V. This makes the HAF2026RJ-EL-E suitable for direct interfacing with modern microcontrollers without level-shifting circuitry.

Does the HAF2026RJ-EL-E require external components to implement thermal shutdown?

No - the HAF2026RJ-EL-E incorporates a monolithically integrated temperature-sensing circuit and latch-type gate shutdown mechanism within the silicon die. When channel temperature reaches 175°C, it automatically pulls the gate low and holds that state until V_GS is reduced to 0 V. No external thermistor, comparator, or reset circuit is needed, simplifying design and improving fault response time compared to discrete protection schemes.

How does the current limitation function behave under sustained overload in the HAF2026RJ-EL-E?

The HAF2026RJ-EL-E limits drain current to 0.6–1.0 A depending on V_GS and V_DS, with ID_limt = 0.6 A specified at V_GS = 5 V and V_DS = 3 V. Under sustained overload, this clamping action works in tandem with thermal shutdown: if current limiting alone cannot prevent junction temperature from reaching 175°C, the device initiates latch-type shutdown. This dual-layer protection prevents destructive power dissipation in the HAF2026RJ-EL-E.

Can the HAF2026RJ-EL-E be used in parallel configurations to increase current capacity?

While the HAF2026RJ-EL-E contains two internal MOSFETs with matched characteristics, paralleling multiple HAF2026RJ-EL-E units is not recommended due to mismatched thermal coupling and independent shutdown triggers. Each unit responds autonomously to its local die temperature - leading to unbalanced current sharing and premature shutdown of one device. For higher current, use a single higher-rated protected MOSFET or consult Renesas' application notes on multi-die synchronization.

What is the significance of the "latch-type" shutdown behavior in the HAF2026RJ-EL-E?

Latch-type shutdown means the HAF2026RJ-EL-E remains off after thermal or overcurrent fault detection until its gate voltage is actively driven to 0 V - unlike auto-retry devices that cycle on/off. This prevents repeated fault exposure and gives system firmware time to diagnose root cause. The HAF2026RJ-EL-E's requirement for full gate discharge ensures safe, predictable recovery only after intentional reset, making it ideal for mission-critical load switching where uncontrolled re-engagement is unacceptable.