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Renesas HAT1111C-EL-E
- Part No.:
- HAT1111C-EL-E
- Manufacturer:
- Renesas
- Category:
- Microcontrollers
- Package:
- -
- Datasheet:
-
HAT1111C-EL-E.pdf
- Description:
- IC MCU
- Quantity:
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Product details
Overview
HAT1111C-EL-E from Renesas Electronics is a silicon P-channel MOSFET designed for low-voltage power switching applications, featuring –60 V VDSS, –2 A continuous drain current, and 245 mΩ typical RDS(on) at VGS = –10 V. It supports 4.5 V gate drive and is optimized for high-density mounting in load switch and power management circuits.
For engineers reviewing the HAT1111C-EL-E datasheet, HAT1111C-EL-E pinout, HAT1111C-EL-E application, or HAT1111C-EL-E equivalent, key selection criteria include verified RDS(on) at 4.5 V gate drive, body diode forward voltage (–0.85 V typ.), and CMFPAK-6 package thermal performance on FR4 boards.
Technical Context
This P-channel MOSFET operates as a high-side load switch with gate threshold voltage (VGS(th)) between –1 V and –2 V, enabling reliable turn-on with standard logic-level drivers. Its low input capacitance (Ciss = 290 pF) and fast switching (td(on) = 20 ns, tf = 4 ns) support efficient operation in DC-DC converters and battery protection circuits.
The device integrates a body-drain diode rated for –2 A reverse current and –1.2 V maximum forward voltage, allowing bidirectional current handling in back-to-back configurations. Thermal derating follows a defined curve: 1.25 W at Ta = 25°C, dropping to zero at 150°C ambient on FR4 board.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | –60 V - supports rail voltages up to 60 V in high-side switching without breakdown |
| RDS(on) @ VGS = –10 V | 245 mΩ typ. - enables <100 mW conduction loss at –2 A, critical for thermally constrained PCBs |
| RDS(on) @ VGS = –4.5 V | 310 mΩ typ. - ensures functional switching with 4.5 V logic, not just 10 V drive |
| Qg | 6 nC - low gate charge reduces driver power and speeds up turn-on/turn-off transitions |
| VGS(th) | –1 to –2 V - guarantees full enhancement with common microcontroller GPIO outputs |
| VDF | –0.85 V typ. - minimizes forward drop in reverse-current paths like battery backup circuits |
| Pch | 1.25 W @ Ta = 25°C on FR4 - defines maximum steady-state power dissipation before thermal shutdown |
Pinout & Package
Package: CMFPAK-6 (RENESAS code PWSF0006JA-A), surface-mount, 6-pin leadless package with exposed drain pad for thermal conduction. Dimensions: 2.1 mm × 1.8 mm × 0.8 mm (L × W × H), mass 0.0065 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Source | Main current return path; tied to system ground or negative rail in high-side configuration |
| 2, 3, 4, 5 | Drain | Four paralleled drain terminals connected to internal die; provide low-inductance, high-current output path and thermal conduction to PCB copper |
| 6 | Gate | Control input; requires no external pull-up when used as high-side switch with active-low enable logic |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) at 4.5 V | 310 mΩ max. enables direct interface with 5 V microcontrollers without level-shifting circuitry |
| High-density CMFPAK-6 footprint | 2.1 × 1.8 mm outline saves >40% board area vs. SO-8, critical for portable power modules |
| Fast switching with low Qgd | 1.2 nC gate-to-drain charge minimizes Miller-induced shoot-through risk in bridge topologies |
| Body diode with low VDF | –0.85 V typ. at –2 A reduces reverse-path losses in OR-ing and battery switchover designs |
Applications
| Power Load Switching | Battery Protection Circuit |
|---|---|
Use Scenario: Enabling/disabling 12 V or 24 V subsystems (e.g., display backlight, sensor array) under MCU control. IC Role / Device Role / Timing Role: High-side P-channel MOSFET switch controlled by inverted GPIO signal. Use Value: Low 310 mΩ RDS(on) at 4.5 V drive ensures <1.25 W total loss at 2 A, eliminating need for heatsinking on compact PCBs. | Use Scenario: Preventing reverse current flow from main battery to backup battery during fault conditions. IC Role / Device Role / Timing Role: Back-to-back configured P-MOSFET providing bidirectional blocking and over-discharge isolation. Use Value: Verified –0.85 V body diode forward voltage ensures minimal voltage drop during reverse-current events, preserving backup runtime. |
| DC-DC Converter Synchronous Rectifier | Industrial I/O Module Protection |
Use Scenario: Replacing Schottky diodes in non-isolated buck converter output stage to improve efficiency. IC Role / Device Role / Timing Role: Low-side synchronous rectifier driven by gate driver with precise timing relative to high-side switch. Use Value: 245 mΩ RDS(on) at –10 V reduces conduction loss by >65% versus 0.4 V Schottky, directly increasing conversion efficiency above 85%. | Use Scenario: Protecting 24 V digital input channels from field-wiring faults and ESD transients. IC Role / Device Role / Timing Role: High-side switch isolating input circuitry during overvoltage or short-circuit events. Use Value: –60 V VDSS rating provides 150% margin over 24 V industrial rails, ensuring robustness against load dump surges. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ROHM RQ3E070AP | RDS(on) = 280 mΩ @ –4.5 V; slightly higher gate charge (7.5 nC); same CMFPAK-6 footprint | Marginally lower efficiency at 2 A due to higher RDS(on); identical thermal profile on FR4 | Acceptable where 0.035 Ω higher on-resistance is tolerable and ROHM supply chain is preferred |
| ON Semiconductor NTMFS4C02P | RDS(on) = 220 mΩ @ –4.5 V; higher VDSS (–80 V); different SO-8FL package (5.0 × 6.0 mm) | Superior voltage margin but requires PCB layout change; unsuitable for space-constrained designs | Preferred only when 80 V rating is mandatory and board area allows SO-8FL rework |
Compared with RQ3E070AP and NTMFS4C02P, the HAT1111C-EL-E delivers optimal balance of 4.5 V drivability, compact CMFPAK-6 size, and –60 V rating-making it uniquely suited for space-limited 24 V industrial modules where thermal headroom and gate drive simplicity are prioritized over absolute lowest RDS(on).
Availability
HAT1111C-EL-E is available at Aetrix Electronics and suitable for industrial I/O modules, battery-powered instrumentation, and compact DC-DC converters requiring stable component supply across multi-year production cycles.
Supply support for HAT1111C-EL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and connectivity solutions for automotive, industrial, and enterprise systems.
The HAT1111C-EL-E belongs to Renesas' high-efficiency power MOSFET product line, engineered specifically for space-constrained, logic-level-driven power switching in industrial automation and portable equipment.
FAQ
What is the maximum continuous drain current rating for the HAT1111C-EL-E?
The HAT1111C-EL-E is rated for –2 A continuous drain current (ID) at Ta = 25°C on a standard FR4 board (40 × 40 × 1.6 mm). Derating applies above 25°C ambient per the published power vs. temperature curve, reaching zero dissipation at 150°C. This rating assumes proper PCB copper area for thermal conduction through the four drain pins and exposed pad.
Does the HAT1111C-EL-E support 4.5 V gate drive, and what is its RDS(on) at that voltage?
Yes, the HAT1111C-EL-E is explicitly specified for 4.5 V gate drive. Its RDS(on) is 310 mΩ typical (450 mΩ max) at ID = –1 A and VGS = –4.5 V, confirming reliable enhancement with standard 5 V logic outputs without requiring gate boosting circuitry.
What package type does the HAT1111C-EL-E use, and is it RoHS compliant?
The HAT1111C-EL-E uses the CMFPAK-6 surface-mount package (RENESAS code PWSF0006JA-A), measuring 2.1 mm × 1.8 mm × 0.8 mm. Per Renesas documentation and JEDEC compliance, the HAT1111C-EL-E is RoHS-compliant and halogen-free, meeting EU Directive 2011/65/EU requirements.
Can the HAT1111C-EL-E be used in parallel configurations, and what design considerations apply?
Yes, the HAT1111C-EL-E supports paralleling due to its positive temperature coefficient of RDS(on), which promotes current sharing. Designers must ensure matched gate drive impedance, symmetrical PCB layout, and shared source routing to minimize imbalance. The four paralleled drain terminals simplify high-current interconnect but require equal-length traces to avoid skew.
What is the body diode forward voltage specification for the HAT1111C-EL-E?
The HAT1111C-EL-E body diode has a forward voltage (VDF) of –0.85 V typical and –1.2 V maximum at IF = –2 A and VGS = 0. This low VDF enables efficient reverse-current conduction in battery OR-ing and flyback protection circuits without external diodes.
HAT1111C-EL-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Package/Case:
- -
- Series:
- -
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Core Processor:
- -
- Core Size:
- -
- Speed:
- -
- Connectivity:
- -
- Peripherals:
- -
- Number of I/O:
- -
- Program Memory Size:
- -
- Program Memory Type:
- -
- EEPROM Size:
- -
- RAM Size:
- -
- Voltage - Supply (Vcc/Vdd):
- -
- Data Converters:
- -
- Oscillator Type:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
HAT1111C-EL-E FAQ
1.How can I place an order for HAT1111C-EL-E through Aetrix?
Please submit a Request for Quotation (RFQ) for HAT1111C-EL-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HAT1111C-EL-E reliable?
The price and inventory of HAT1111C-EL-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HAT1111C-EL-E is usually 5 days.
3.What payment methods are accepted for HAT1111C-EL-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HAT1111C-EL-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HAT1111C-EL-E?
HAT1111C-EL-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HAT1111C-EL-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HAT1111C-EL-E?
For technical support, including HAT1111C-EL-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HAT1111C-EL-E requirements.
6.How does Aetrix verify that HAT1111C-EL-E is sourced from the original manufacturer or authorized distributors?
All HAT1111C-EL-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HAT1111C-EL-E meets industry standards.
7.What is the process for return or replacement of HAT1111C-EL-E?
All HAT1111C-EL-E units undergo pre-shipment inspection (PSI). If there is an issue with HAT1111C-EL-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HAT1111C-EL-E part is unused and in its original packaging.
Return procedure for HAT1111C-EL-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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