Nexperia USA Inc. HEF4011BT,653

Overview

HEF4011BT,653 from Nexperia is a quad 2-input CMOS NAND gate IC operating from 3 V to 15 V supply, featuring symmetrical output drive (±4.2 mA at 15 V), input clamp diodes for overvoltage tolerance, and guaranteed operation from −40 °C to +125 °C. It delivers propagation delays as low as 20 ns at 15 V with 50 pF load and is used in industrial control logic, power sequencing, and digital interface level-shifting circuits.

For engineers reviewing the HEF4011BT,653 datasheet, HEF4011BT,653 pinout, HEF4011BT,653 application, or HEF4011BT,653 equivalent, this page provides verified functional identity, SO14 pin mapping, static/dynamic electrical specifications across temperature, ESD robustness (HBM >2000 V), and validated alternatives for legacy 4000-series logic replacement.

Technical Context

The HEF4011BT,653 implements four independent NAND gates using silicon-gate CMOS technology, enabling fully static operation with zero DC current draw in steady state. Its inputs include integrated clamp diodes referenced to VSS and VDD, permitting safe interfacing with signals exceeding the supply rail when used with current-limiting resistors.

It complies with JEDEC JESD13-B and supports three standard supply voltages (5 V, 10 V, 15 V) with parametric ratings fully specified across −40 °C to +125 °C. Output characteristics are standardized for predictable fan-out and noise margin behavior in mixed-voltage systems.

Key Specifications

Pinout & Package

HEF4011BT,653 is housed in a plastic small outline package (SO14), SOT108-1, with 14 leads, 3.9 mm body width, and 1.27 mm lead pitch. The package is RoHS-compliant and rated for reflow soldering per JEDEC J-STD-020.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar quad 2-input NAND gate applications.

Compared with CD4011BE and 74HC00D,653, the HEF4011BT,653 uniquely balances wide-voltage operation, industrial temperature range, and input overvoltage tolerance-making it the sole choice for mixed-rail, high-reliability, or legacy-replacement scenarios.

Availability

HEF4011BT,653 is available at Aetrix Electronics and suitable for industrial automation, power management, and embedded control applications requiring stable component supply, long-lifecycle assurance, and guaranteed traceable sourcing.

Supply support for HEF4011BT,653 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential efficiency technologies, delivering high-performance logic, discrete, and MOSFET solutions optimized for reliability and manufacturability.

The HEF4011BT,653 belongs to Nexperia's legacy-compatible 4000B logic family, designed specifically for industrial, automotive ancillary, and long-lifecycle applications demanding extended temperature operation and robust ESD performance.

FAQ

Can HEF4011BT,653 operate reliably at 15 V with a 125 °C ambient temperature?

Yes. The datasheet guarantees full functionality at VDD = 15 V and Tamb = +125 °C, including VOH ≥ 14.95 V, VOL ≤ 0.05 V, and tpd ≤ 35 ns with 50 pF load. Total supply current remains ≤30 μA under these conditions, confirming thermal stability without derating.

Are unused inputs required to be terminated, and if so, how?

Yes. Unused inputs must be connected to VDD, VSS, or another driven input to prevent floating nodes that cause increased power consumption and potential oscillation. This is explicitly mandated in Section 1 of the datasheet and applies to all four gates' A and B inputs independently.

Does HEF4011BT,653 support mixed-voltage interfacing, such as 3.3 V inputs driving a 12 V-powered device?

Yes - via its input clamp diodes. A 3.3 V signal applied to an input while VDD = 12 V is safely clamped by the internal diode to VDD + 0.5 V; a 10 kΩ series resistor limits current to <1 mA, satisfying the IIK limit of ±10 mA per the Absolute Maximum Ratings table.

How does the dynamic power dissipation scale with frequency and load capacitance?

Dynamic power follows PD = K × fi + Σ(fo × CL) × VDD², where K = 20100 μW/MHz at 15 V. For example, at 1 MHz input frequency, 50 pF load, and 15 V supply, PD ≈ 20.1 mW + (1 × 50) × 225 = 20.1 mW + 11.25 mW = 31.35 mW - well within the 500 mW package limit.