Nexperia USA Inc. HEF4069UBT,653

Overview

HEF4069UBT,653 from Nexperia is a hex unbuffered CMOS inverter IC operating from 3.0 V to 15.0 V supply, featuring six independent inverting gates with input clamp diodes, symmetrical output drive (±1.1 mA at 5 V), and guaranteed operation from −40 °C to +125 °C - used in oscillator circuits, analog amplifiers, and digital signal inversion where low propagation delay and rail-to-rail swing are required.

For engineers reviewing the HEF4069UBT,653 datasheet, HEF4069UBT,653 pinout, HEF4069UBT,653 application, or HEF4069UBT,653 equivalent, key selection criteria include unbuffered gate architecture for analog gain control, SO14 package thermal derating (10.1 mW/K above 100 °C), VIH/VIL thresholds scalable with VDD, and ESD robustness (HBM >2000 V, CDM >1000 V).

Technical Context

The HEF4069UBT implements six identical unbuffered CMOS inverters - each consisting of a single P-channel and N-channel MOSFET pair without internal buffering stages - enabling direct use as linear amplifiers when biased in the transition region. Its input clamp diodes allow safe interfacing to voltages exceeding VDD via external current-limiting resistors.

Propagation delay varies with supply voltage and load capacitance: tPHL = 7 ns + (0.16 ns/pF)×CL at 15 V, and tPLH = 7 ns + (0.16 ns/pF)×CL at 15 V; output transition times follow similar CL-dependent formulas. Static characteristics show VOH ≥ VDD − 0.05 V and VOL ≤ 0.05 V across full temperature range.

Key Specifications

Pinout & Package

HEF4069UBT,653 is supplied in the SO14 (SOT108-1) plastic small outline package: 14-lead, 3.9 mm body width, 1.27 mm lead pitch, with gull-wing leads and pin 1 index marker.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar hex inverter applications.

Compared with CD4069UBM96, HEF4069UBT,653 adds +125 °C operation and CDM ESD validation; versus 74HC04D,653, it trades speed and drive strength for analog usability and rail-tolerant inputs - making it uniquely suited for oscillator and linear amplifier roles.

Availability

HEF4069UBT,653 is available at Aetrix Electronics and suitable for oscillator design, crystal reference generation, analog signal conditioning, and industrial logic inversion requiring stable component supply across extended temperature ranges.

Supply support for HEF4069UBT,653 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert delivering high-performance logic, discrete, and MOSFET solutions optimized for efficiency, reliability, and manufacturability in industrial, consumer, and communications applications.

The HEF4069UBT,653 belongs to Nexperia's legacy CMOS logic family designed specifically for robust, wide-supply, unbuffered inverter functionality - targeting oscillator circuits, analog-digital hybrid systems, and legacy voltage domain interfacing.

FAQ

Can HEF4069UBT,653 be used as an analog amplifier?

Yes - its unbuffered CMOS structure allows stable DC biasing in the linear region. With a high-value feedback resistor (e.g., 330 kΩ) from output to input, it operates as a transconductance amplifier achieving ~7.5 mA/V gain at 15 V supply, as verified in Figure 11 and Table 7 of the datasheet.

What is the maximum capacitive load for stable oscillator operation?

The datasheet specifies test conditions up to 50 pF (Table 8), and propagation delay scales linearly with CL per tPHL = 7 ns + (0.16 ns/pF)×CL at 15 V. For reliable astable operation, keep total node capacitance ≤50 pF; higher values increase period uncertainty and may cause startup failure in crystal configurations.

Does HEF4069UBT,653 support 3.3 V logic levels?

Yes - the 3.0 V minimum supply enables direct use with 3.3 V systems. VIH is 0.7×VDD (2.31 V min) and VIL is 0.3×VDD (0.99 V max) at 3.3 V, providing adequate noise margin. However, output drive drops to ±0.36 mA, so ensure load impedance remains >10 kΩ for clean switching.

How does the input clamp diode affect external interface design?

The integrated clamp diodes allow safe connection of inputs to voltages beyond VDD or below VSS - provided a current-limiting resistor restricts IIK to ≤±10 mA (per Table 3). For example, a 10 kΩ resistor limits current to 1.5 mA when interfacing a 15 V signal to a 5 V-powered HEF4069UBT,653.