Nexperia USA Inc. HEF4104BT-Q100J

Overview

HEF4104BT-Q100 from Nexperia is a quad low-to-high voltage translator IC with complementary 3-state outputs (Bn/Bn), dual independent supply rails (VDD(A) and VDD(B)), automotive AEC-Q100 Grade 3 qualification (-40 °C to +85 °C), 3.0 V to 15.0 V operating range, and input clamp diodes enabling overvoltage-tolerant interfacing - used in automotive body control modules for translating 3.3 V microcontroller signals to 12 V actuator drivers.

For engineers reviewing the HEF4104BT-Q100 datasheet, HEF4104BT-Q100 pinout, HEF4104BT-Q100 application, or HEF4104BT-Q100 equivalent, key selection criteria include dual-rail level translation capability, OE-controlled 3-state output behavior, AEC-Q100 compliance, SO16 package thermal performance, and static CMOS operation without timing constraints.

Technical Context

The device implements four independent level-shifting channels, each accepting logic inputs referenced to VDD(A) and producing complementary CMOS outputs referenced to VDD(B), with VDD(B) ≥ VDD(A) enforced by internal architecture. Input clamping diodes allow safe interface to voltages exceeding VDD(A), while OE enables simultaneous high-impedance state across all Bn/Bn outputs.

Propagation delays scale with supply voltage and load capacitance (e.g., tPHL = 57 ns + 0.16 ns/pF × CL at 15 V), and output transition times are symmetric (tTHL ≈ tTLH). Static characteristics guarantee VIH ≥ 11.0 V and VOL ≤ 0.05 V at 15 V, supporting robust noise margins in noisy automotive environments.

Key Specifications

Pinout & Package

HEF4104BT-Q100 is housed in a plastic small outline package (SO16), SOT109-1 variant, with 16 leads, 3.9 mm body width, and standard 1.27 mm lead pitch - optimized for automated PCB assembly and thermal dissipation in automotive control units.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar quad-level translation applications.

Compared with SN74AVC4T245RTER and TXS0104EJR, the HEF4104BT-Q100 uniquely supports asymmetric dual-rail operation up to 15 V, delivers complementary CMOS outputs with OE control, and provides AEC-Q100 qualification - making it the sole option for automotive unidirectional high-voltage translation with fail-safe disable capability.

Availability

HEF4104BT-Q100 is available at Aetrix Electronics and suitable for automotive body control modules, instrument cluster interfaces, and power distribution units requiring stable component supply, long-term lifecycle assurance, and AEC-Q100-compliant sourcing.

Supply support for HEF4104BT-Q100 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability logic, analog, and MOSFET solutions, with leadership in automotive and industrial power efficiency and signal integrity.

The HEF4104BT-Q100 belongs to Nexperia's automotive-qualified logic translator product line, engineered specifically for robust voltage domain bridging in harsh-temperature vehicle subsystems where safety, longevity, and ESD resilience are mandatory.

FAQ

What is the maximum allowable voltage difference between VDD(A) and VDD(B)?

VDD(B) must be ≥ VDD(A), with absolute maximum ratings of -0.5 V to +18 V for each supply. The functional operating range requires VDD(B) ≥ VDD(A), but no fixed maximum delta-V is specified - design must ensure VDD(B) remains within its 18 V absolute limit and complies with recommended conditions (VDD(B) ≤ 15 V).

Can HEF4104BT-Q100 translate from a higher to a lower voltage domain?

No - the HEF4104BT-Q100 is strictly a low-to-high voltage translator. Its architecture requires VDD(B) ≥ VDD(A); it cannot operate with VDD(A) > VDD(B). For bidirectional or high-to-low translation, alternative devices such as the 74LVC4245 or dedicated bidirectional translators are required.

How does the OE pin behave during power-up sequencing?

The OE pin is active-LOW and internally pulled HIGH via weak NMOS (not a physical resistor), so outputs default to enabled (non-high-Z) at power-up if VDD(A) and VDD(B) stabilize simultaneously. To guarantee high-Z at startup, OE must be actively driven LOW until both supplies are stable and valid logic levels are established.

Is there any restriction on capacitive load per output?

Dynamic characteristics are characterized up to 50 pF (Table 10). While not an absolute limit, propagation delay and transition time increase linearly with load capacitance (e.g., tPHL = 57 ns + 0.16 ns/pF × CL at 15 V). Loads >100 pF may exceed timing budgets or cause excessive dynamic power dissipation (>500 mW total).