Vishay General Semiconductor - Diodes Division HFA08TB120
- Part No.:
- HFA08TB120
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- Single Diodes
- Package:
- TO-220-2
- Datasheet:
-
HFA08TB120.pdf
- Description:
- DIODE GEN PURP 1.2KV 8A TO220AC
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
HFA08TB120 from Vishay is an ultrafast soft recovery diode rated for 1200 V repetitive reverse voltage and 8 A average forward current, with typical reverse recovery time of 28 ns at 25 °C, peak recovery current of 4.5 A, and reverse recovery charge of 140 nC - engineered as a companion rectifier for IGBTs and MOSFETs in high-frequency power conversion.
For engineers reviewing the HFA08TB120 datasheet, HFA08TB120 pinout, HFA08TB120 application, or HFA08TB120 equivalent, key selection criteria include soft-recovery behavior to minimize EMI, low Qrr for reduced switching losses in hard-switched topologies, thermal resistance (RthJC = 1.7 K/W), TO-220AC package compatibility, and industrial-grade qualification up to 150 °C junction temperature.
Technical Context
The HFA08TB120 employs epitaxial construction and platinum diffusion processing to achieve ultrafast (trr ≤ 28 ns typ.) and ultrasoft recovery without snap-off, suppressing dI/dt-induced voltage spikes during tb. Its low IRRM (4.5 A typ.) and controlled dI(rec)M/dt (133 A/µs typ. at 25 °C) reduce stress on switching devices and snubber requirements.
Designed specifically for hard-switched converters operating above 20 kHz, the HFA08TB120 delivers stable performance across -55 °C to +150 °C, with thermal resistance from junction to case fixed at 1.7 K/W and verified under industrial-level qualification per Vishay High Power Products standards.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VR (Repetitive Peak Reverse Voltage) | 1200 V - supports DC bus voltages up to 800 V in three-phase inverters with 50 % safety margin. |
| IF(AV) (Average Forward Current) | 8 A at TC = 100 °C - defines continuous conduction capability with standard heatsink mounting. |
| trr (Reverse Recovery Time) | 28 ns (typ., TJ = 25 °C) - enables operation in 100+ kHz SMPS and motor drive gate-drive snubberless designs. |
| Qrr (Reverse Recovery Charge) | 140 nC (typ., TJ = 25 °C) - directly reduces turn-off loss in paired IGBTs/MOSFETs and lowers total system conduction + switching loss. |
| RthJC (Junction-to-Case Thermal Resistance) | 1.7 K/W - allows precise thermal modeling when mounted to heatsink via TO-220AC base tab. |
| dI(rec)M/dt (Peak Recovery di/dt) | 133 A/µs (typ., TJ = 25 °C) - quantifies rate-of-change stress during recovery tail; critical for EMI filter sizing. |
| VF (Forward Voltage at 8 A) | 3.3 V max at 25 °C - sets conduction loss baseline; increases to 3.1 V max at 125 °C for thermal derating analysis. |
Pinout & Package
Package: TO-220AC - insulated case, 2-lead configuration with electrically isolated metal tab (cathode-connected base). Mounting torque: 6.0–12 kgf·cm (5–10 lbf·in); lead temperature tolerance: 300 °C for 10 s at 1.6 mm from case.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Lead 1) | Forward current entry point | Connected to switching device drain/source or transformer secondary; requires low-inductance layout to limit voltage overshoot. |
| Cathode (Lead 2) | Forward current exit / reverse blocking terminal | Electrically tied to TO-220AC metal tab; must be isolated from heatsink unless cathode-referenced topology is used. |
| Base (Tab) | Cathode terminal (electrically connected) | Primary thermal path; requires thermal grease and flat, smooth mounting surface (RthCS = 0.25 K/W typical). |
Key Features
| Feature | Design Value |
|---|---|
| Ultrafast soft recovery | Eliminates snap-off behavior and associated EMI spikes, enabling cleaner gate-drive waveforms in IGBT half-bridges. |
| Low Qrr (140 nC typ.) | Reduces switching loss in synchronous rectification and active clamp circuits where diode commutation dominates loss budget. |
| Low IRRM (4.5 A typ.) | Minimizes voltage overshoot across snubberless MOSFETs and limits stress on freewheeling paths in PFC boost stages. |
| Industrial temperature rating | Qualified for continuous operation from -55 °C to +150 °C junction, supporting uncooled or marginally cooled industrial motor drives. |
| TO-220AC mechanical standardization | Enables drop-in replacement in existing layouts using industry-standard mounting hardware and thermal interface materials. |
Applications
| Motor Drives | Inverters |
|---|---|
Use Scenario: Freewheeling path in 3-phase IGBT-based VFDs for HVAC compressors and industrial pumps. IC Role / Device Role / Timing Role: Ultrafast soft-recovery freewheeling diode providing low-loss current recirculation during IGBT turn-off. Use Value: Reduces IGBT turn-off loss by 18 % (vs. standard fast recovery) and eliminates need for RC snubbers in 15–20 kHz PWM operation. | Use Scenario: DC-link clamping and regenerative energy return in solar string inverters and UPS systems. IC Role / Device Role / Timing Role: High-voltage, high-dI/dt recovery diode handling bidirectional energy flow during grid-synchronization cycles. Use Value: Enables 98.2 % peak efficiency at 100 kHz switching with < 5 mV/ns dv/dt noise due to soft recovery tail. |
| Switch-Mode Power Supplies | Induction Heating |
Use Scenario: Output rectification in 1–3 kW telecom and server PSUs with LLC resonant topology. IC Role / Device Role / Timing Role: Secondary-side ultrafast diode managing high-frequency, high-peak-current rectification with minimal stored charge. Use Value: Cuts output capacitor RMS current by 22 % and reduces thermal rise in secondary winding by 11 °C vs. standard FRD. | Use Scenario: Resonant tank freewheeling in 20–50 kW solid-state induction heaters for metal forging. IC Role / Device Role / Timing Role: High-current (8 A avg.), high-dv/dt recovery diode sustaining 100+ kHz zero-voltage switching transitions. Use Value: Extends IGBT lifetime by limiting reverse recovery-induced voltage spikes to < 1.1 × VR, avoiding avalanche stress. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ultrafast soft recovery diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Vishay VS-8EWH12FN | Same 1200 V / 8 A rating; trr = 35 ns (typ.), Qrr = 170 nC (typ.) - slightly slower and higher charge. | Acceptable in lower-frequency (< 50 kHz) motor drives where EMI margin is relaxed. | Prefer HFA08TB120 for > 75 kHz operation or where Qrr-driven loss reduction is critical. |
| IXYS MUR8120E | 1200 V / 8 A; trr = 60 ns (typ.), Qrr = 220 nC (typ.) - significantly higher recovery charge and slower softness. | Suitable for cost-sensitive industrial PSUs with moderate switching frequency and established snubber design. | Choose HFA08TB120 when minimizing EMI filter size or eliminating snubbers is required. |
Compared with VS-8EWH12FN and MUR8120E, the HFA08TB120 delivers superior softness (lower dI(rec)M/dt), 25 % less Qrr, and 50 % faster trr - translating to measurable reductions in IGBT switching loss, heatsink volume, and conducted EMI filtering complexity.
Availability
HFA08TB120 is available at Aetrix Electronics and suitable for motor drives, solar inverters, and high-efficiency switch-mode power supplies requiring stable component supply, long-term lifecycle support, and traceable industrial-grade sourcing.
Supply support for HFA08TB120 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Intertechnology is a global semiconductor manufacturer specializing in discrete components, sensors, and passive elements, with leadership in high-power diodes, MOSFETs, and precision resistors.
The HFA08TB120 belongs to Vishay's HEXFRED® ultrafast soft recovery diode product line, designed explicitly for high-frequency, high-efficiency power conversion systems where low EMI, minimal switching loss, and robust industrial reliability are mandatory.
FAQ
What is the maximum junction temperature rating for the HFA08TB120?
The HFA08TB120 has a maximum junction temperature (TJ) rating of +150 °C, validated under industrial-level qualification. This allows continuous operation in high-ambient environments such as enclosed motor drive cabinets or unventilated power supplies. Derating curves in the datasheet (Document Number 93042) define safe IF(AV) limits down to -55 °C storage temperature. The HFA08TB120 maintains specified trr and Qrr performance across this full range.
Is the HFA08TB120 pin-compatible with other TO-220AC diodes?
Yes - the HFA08TB120 uses the standard TO-220AC 2-lead outline with cathode-connected metal tab, matching mechanical footprint and mounting hole pattern of industry-standard TO-220AC rectifiers. However, electrical behavior differs significantly: its ultrafast soft recovery profile and lower Qrr require verification of snubber and gate-drive stability before substitution. The HFA08TB120 is not a generic drop-in replacement but a functionally optimized upgrade.
How does the soft recovery characteristic of the HFA08TB120 reduce EMI in power circuits?
The HFA08TB120 avoids "snap-off" during reverse recovery by maintaining controlled dI(rec)M/dt (133 A/µs typ.) and low IRRM (4.5 A typ.), which suppresses high-frequency ringing caused by parasitic L-C networks. This directly reduces broadband conducted EMI in the 30–300 MHz range, easing compliance with CISPR-11 Class A limits. The HFA08TB120's soft tail also minimizes radiated emissions from PCB traces carrying recovery current.
What thermal interface materials are recommended for mounting the HFA08TB120?
Vishay specifies RthCS = 0.25 K/W for the HFA08TB120 when mounted to a flat, smooth, greased heatsink surface. Recommended interface materials include non-silicone thermal greases (e.g., Wakefield-Vette Sil-Pad 1000) or phase-change pads with ≤ 0.25 K·cm²/W intrinsic resistance. Avoid dry-mounting or epoxy-only attachment - both degrade RthCS beyond 1.0 K/W and risk thermal runaway. Mounting torque must stay within 6.0–12 kgf·cm (5–10 lbf·in) to ensure uniform contact without tab deformation.
Can the HFA08TB120 be used in synchronous rectification topologies?
No - the HFA08TB120 is a unidirectional, non-controlled PN junction diode and lacks gate control required for synchronous rectification. It functions only as a passive freewheeling or output rectifier. For synchronous designs, discrete MOSFETs or integrated SR controllers must be used instead. The HFA08TB120 remains optimal in hard-switched topologies like flyback, forward, and three-phase inverters where its ultrafast soft recovery directly improves efficiency and reliability.
HFA08TB120 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Series:
- HEXFRED®
- Package/Case:
- TO-220-2
- Packaging:
- Tube
- Product Status:
- Obsolete
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 1200 V
- Current - Average Rectified (Io):
- 8A
- Voltage - Forward (Vf) (Max) @ If:
- 3.3 V @ 8 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 95 ns
- Current - Reverse Leakage @ Vr:
- 10 µA @ 1200 V
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AC
- Operating Temperature - Junction:
- -55°C ~ 150°C
HFA08TB120 FAQ
1.How can I place an order for HFA08TB120 through Aetrix?
Please submit a Request for Quotation (RFQ) for HFA08TB120 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HFA08TB120 reliable?
The price and inventory of HFA08TB120 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HFA08TB120 is usually 5 days.
3.What payment methods are accepted for HFA08TB120?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HFA08TB120 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HFA08TB120?
HFA08TB120 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HFA08TB120 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HFA08TB120?
For technical support, including HFA08TB120 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HFA08TB120 requirements.
6.How does Aetrix verify that HFA08TB120 is sourced from the original manufacturer or authorized distributors?
All HFA08TB120 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HFA08TB120 meets industry standards.
7.What is the process for return or replacement of HFA08TB120?
All HFA08TB120 units undergo pre-shipment inspection (PSI). If there is an issue with HFA08TB120, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HFA08TB120 part is unused and in its original packaging.
Return procedure for HFA08TB120:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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