Renesas HM28100TTI5SEZ

Overview

HM28100TTI5SEZ from Renesas Electronics is a 8-Mbit (1,048,576-word × 8-bit) CMOS static RAM with single 5.0 V ±10% supply, 55 ns max access time, and –40°C to +85°C industrial temperature range. It features dual chip select (CS1/CS2) for battery backup operation, three-state I/O, and low standby current (0.8 µA typ), making it suitable for embedded systems requiring nonvolatile data retention during power loss.

For engineers reviewing the HM28100TTI5SEZ datasheet, HM28100TTI5SEZ pinout, HM28100TTI5SEZ application, or HM28100TTI5SEZ equivalent, key selection criteria include TSOP II package compatibility, 44-pin address/data multiplexing support, low-voltage data retention down to 2.0 V, and dual-CS-controlled standby modes for legacy industrial controller memory upgrades.

Technical Context

The HM28100TTI5SEZ implements a fully static 6-transistor memory cell architecture with no clock or refresh required. Its control logic supports independent CS1/CS2 activation for flexible memory mapping and battery-backed retention - CS2 enables data retention mode when held low, while CS1 controls normal read/write operations.

It uses common bidirectional I/O lines (I/O0–I/O7) with OE and WE signals defining read/write direction and output enable timing. The device guarantees equal access and cycle times (55 ns), and supports high-impedance outputs during standby or output disable states per JEDEC-standard TSOP II timing waveforms.

Key Specifications

Pinout & Package

HM28100TTI5SEZ is housed in a 44-pin plastic TSOP II package (JEDEC MO-141, Hitachi TTP-44DE), 18.41 mm × 10.16 mm × 1.20 mm, with gull-wing leads and 0.8 mm pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with HM28100TTI5SEZ, IS61LV8196AL-10TLI offers faster speed but mandates full 3.3 V infrastructure, while AS6C8008-55PCN matches voltage and timing but shifts retention responsibility to external circuitry - HM28100TTI5SEZ remains optimal for drop-in industrial 5 V upgrades requiring autonomous backup.

Availability

HM28100TTI5SEZ is available at Aetrix Electronics and suitable for programmable logic controllers, point-of-sale terminals, industrial HMIs, and legacy CNC machine retrofits requiring stable component supply and long-term obsolescence support.

Supply support for HM28100TTI5SEZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for industrial, automotive, and enterprise applications.

The HM628100I Series - including HM28100TTI5SEZ - was designed specifically for industrial embedded systems needing reliable, low-power, battery-backed SRAM with extended temperature operation and pin-compatible legacy upgrade paths.

FAQ

What is the correct power-up sequencing for HM28100TTI5SEZ?

HM28100TTI5SEZ requires VCC to be stable before applying any address or control signals. Apply VCC first, then wait ≥100 ns before asserting CS1 or CS2. No specific ramp rate is mandated, but monotonic rise above 4.5 V is required prior to operation. This ensures internal latches and sense amplifiers initialize correctly - failure to observe this may cause transient data corruption during initial access. Always confirm VCC stability using an oscilloscope probe at the VCC pin of HM28100TTI5SEZ.

Does HM28100TTI5SEZ support true simultaneous read/write operations?

No, HM28100TTI5SEZ does not support simultaneous read/write. It is a standard asynchronous SRAM with shared I/O lines and sequential access control: a write cycle requires WE low and CS1 low/CS2 high, while a read requires OE low and CS1 low/CS2 high. Attempting concurrent access violates the timing table and may result in bus contention or undefined data. HM28100TTI5SEZ must be used in strict read-then-write or write-then-read sequences per its AC characteristics.

Can HM28100TTI5SEZ be used in place of HM628100LTTI-5SL?

Yes, HM28100TTI5SEZ is functionally and pin-compatible with HM628100LTTI-5SL. Both share identical 44-pin TSOP II (TTP-44DE) packaging, 55 ns access timing, dual CS architecture, and –40°C to +85°C temperature rating. The "TTI5SEZ" suffix denotes Renesas' post-merger marking convention for the same die and assembly as the original Hitachi HM628100LTTI-5SL - no PCB or firmware changes are required for replacement.

What is the maximum capacitive load HM28100TTI5SEZ can drive on its I/O lines?

HM28100TTI5SEZ is characterized for a 1-TTL gate + 50 pF load, per its AC test conditions. Output drive strength is specified at IOH = –1 mA (VOH ≥ 2.4 V) and IOL = 2.1 mA (VOL ≤ 0.4 V). Exceeding 50 pF total load capacitance - including PCB trace, scope probe, and connected device inputs - risks violating tOLZ (5 ns) and tOHZ (20 ns) timing margins, potentially causing setup/hold violations in high-speed interfaces. Always minimize stub length and use series termination if routing to multiple loads.

How does HM28100TTI5SEZ enter and exit data retention mode?

HM28100TTI5SEZ enters data retention mode when CS2 is held ≤ 0.2 V (or ≥ VCC – 0.2 V) while CS1 is ≥ VCC – 0.2 V - no address or data activity is required. It exits retention on the next valid read cycle (CS1 low, CS2 high, OE low). Retention current is 0.8 µA typ at 3.0 V, and data is guaranteed down to 2.0 V VCC. The transition is automatic and transparent; HM28100TTI5SEZ requires no command or initialization sequence to retain data.