Renesas HM2V8100TTI5SPEZ

Overview

HM2V8100TTI5SPEZ from Renesas Technology Corp. is a 8-Mbit (1,048,576-word × 8-bit) CMOS static RAM designed for low-power, battery-backed memory applications in industrial and embedded systems. It operates from a single 5.0 V ±10% supply, delivers 55 ns max access time, consumes only 7.5 µW typical standby current, and supports –40°C to +85°C operation in a 44-pin TSOP II package.

For engineers reviewing the HM2V8100TTI5SPEZ datasheet, HM2V8100TTI5SPEZ pinout, HM2V8100TTI5SPEZ application, or HM2V8100TTI5SPEZ equivalent, key selection criteria include dual chip select support for battery backup mode, three-state bidirectional I/O, full static operation without clocks or refresh, and verified data retention down to 2.0 V at extended temperature.

Technical Context

This SRAM implements a fully static 6-transistor memory cell architecture with independent address decoding, column I/O gating, and control logic that enables simultaneous read/write operations without external timing constraints. Its dual chip select (CS1/CS2) architecture allows selective activation of normal operation or low-voltage data retention mode - CS2-controlled retention permits VCC as low as 2.0 V while maintaining stored data.

The device uses standard TTL-compatible input thresholds (VIH = 2.2 V, VIL = 0.8 V), supports common I/O with output enable (OE) and write enable (WE), and features high-impedance outputs during standby or disable states. All timing parameters - including tAA (55 ns), tRC (55 ns), tOE (35 ns), and tWP (40 ns) - are guaranteed across the full industrial temperature range under 5.0 V ±10% supply conditions.

Key Specifications

Pinout & Package

HM2V8100TTI5SPEZ is housed in a 44-pin plastic TSOP II package (Hitachi code TTP-44DE, JEDEC standard), measuring 18.81 mm × 10.16 mm × 1.20 mm max, with gull-wing leads and 0.80 mm pitch. The package supports automated optical inspection and is RoHS-compliant per Renesas' manufacturing standards at time of release.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with IS62WV5128BLL-55TLI and AS6C4008-55TIN, HM2V8100TTI5SPEZ uniquely provides dual-CS–enabled data retention at 2.0 V with sub-µA standby, making it the only option among the three qualified for true zero-software-intervention battery backup in industrial temperature ranges.

Availability

HM2V8100TTI5SPEZ is available at Aetrix Electronics and suitable for industrial PLC data buffering, medical device configuration storage, telecom line card status logging, and avionics health monitor caching requiring stable component supply across extended product lifecycles.

Supply support for HM2V8100TTI5SPEZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Technology Corp. is a Japanese semiconductor manufacturer formed in 2003 through the merger of Mitsubishi Electric's and Hitachi's semiconductor operations, specializing in microcontrollers, analog, power, and memory solutions.

The HM628100I Series - including HM2V8100TTI5SPEZ - was developed to deliver high-density, low-power, industrial-temperature SRAM for mission-critical embedded systems requiring long-term data integrity without refresh overhead.

FAQ

What is the maximum guaranteed access time for HM2V8100TTI5SPEZ across its full operating temperature range?

The HM2V8100TTI5SPEZ guarantees a maximum access time of 55 ns over the full industrial temperature range of –40°C to +85°C and at VCC = 5.0 V ±10%. This value is specified as tAA (address access time) and is validated per AEC-Q100 stress test conditions outlined in the original Hitachi/Renesas qualification report ADE-203-1302B Rev. 1.0.

Does HM2V8100TTI5SPEZ support true battery backup operation, and how is it enabled?

Yes, HM2V8100TTI5SPEZ supports true hardware-based battery backup via its dual chip select architecture. When CS2 is driven low while CS1 remains high, the device enters data retention mode and maintains stored contents down to VCC = 2.0 V with typical ICCDR = 0.8 µA - no software or external controller action is required to initiate or maintain this state.

What package type and dimensions does HM2V8100TTI5SPEZ use, and is it RoHS-compliant?

HM2V8100TTI5SPEZ uses a 44-pin plastic TSOP II package (Hitachi code TTP-44DE), measuring 18.81 mm × 10.16 mm × 1.20 mm max with 0.80 mm lead pitch. Per Renesas' 2002–2003 manufacturing documentation, this variant is lead-free and RoHS-compliant, with plating thickness and base material specifications fully aligned with JEDEC MO-143 standards.

Can HM2V8100TTI5SPEZ be used with a 3.3 V microcontroller interface without level shifters?

No - HM2V8100TTI5SPEZ is a 5 V-only device with VIH = 2.2 V minimum and VIL = 0.8 V maximum, but its I/O structure is not 5 V-tolerant when driven by 3.3 V logic. Direct connection to 3.3 V MCUs risks violating input voltage limits and may cause unreliable operation; a bidirectional level shifter or voltage translator is required for safe interfacing.

What is the minimum supply voltage at which HM2V8100TTI5SPEZ retains data, and under what conditions?

HM2V8100TTI5SPEZ retains data down to VCC = 2.0 V minimum, provided CS2 is held low (or CS1 is high and CS2 is within 0–0.2 V or VCC–0.2–VCC) and all other inputs are in high-impedance state. This specification is validated per the Low VCC Data Retention Characteristics table (page 12) and applies across –40°C to +85°C ambient temperature.