Renesas HM2V8100TTI5SSPE

Overview

HM2V8100TTI5SSPE from Renesas Technology Corp. is a 8-Mbit (1,048,576-word × 8-bit) CMOS static RAM designed for low-power, battery-backed memory applications in industrial and embedded systems. It operates on a single 5.0 V ±10% supply, delivers 55 ns max access time, consumes only 7.5 µW typical standby current, and supports wide temperature operation from –40°C to +85°C in a 44-pin TSOP II package.

For engineers reviewing the HM2V8100TTI5SSPE datasheet, HM2V8100TTI5SSPE pinout, HM2V8100TTI5SSPE application, or HM2V8100TTI5SSPE equivalent, this device is selected for high-density, zero-clock, static data retention in power-constrained environments where reliability across extended thermal ranges is critical - especially in backup SRAM, real-time clock buffers, and legacy industrial controllers.

Technical Context

The HM2V8100TTI5SSPE implements a fully static 6-transistor memory cell architecture with no refresh required. Its dual chip select (CS1/CS2) enables flexible memory mapping and battery backup mode activation - CS2-controlled retention allows data hold at VCC as low as 2.0 V while maintaining ≤10 µA ICCDR.

It features common I/O with three-state output control via OE and WE, equal read/write cycle times (55 ns), and independent address/data bus timing validated under –40°C to +85°C with 5.0 V ±10% supply. The TSOP II package supports high-density surface mounting with JEDEC-standard pinout and 0.8 mm lead pitch.

Key Specifications

Pinout & Package

HM2V8100TTI5SSPE is housed in a 44-pin plastic TSOP II (TTP-44DE) package with 0.8 mm lead pitch, 18.41 mm × 10.16 mm body, and standard JEDEC-compliant pin layout optimized for high-density PCB layouts.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar static RAM applications.

Compared with HM2V8100TTI5SSPE, IS61LV8196AL-10TLI offers superior speed but mandates 3.3 V infrastructure, while AS6C8008-55PCN preserves voltage compatibility at the cost of mechanical incompatibility - HM2V8100TTI5SSPE remains optimal for drop-in 5 V, TSOP-based industrial retrofits.

Availability

HM2V8100TTI5SSPE is available at Aetrix Electronics and suitable for industrial PLC data buffering, legacy embedded system memory upgrades, and telecom line card configuration storage requiring stable component supply across extended product lifecycles.

Supply support for HM2V8100TTI5SSPE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Technology Corp. is a Japanese semiconductor manufacturer formed in 2003 through the merger of Hitachi and Mitsubishi Electric's semiconductor divisions, specializing in microcontrollers, analog, memory, and logic devices.

The HM628100I Series - including HM2V8100TTI5SSPE - was developed for industrial and automotive-adjacent applications demanding wide-temperature, low-power, pin-compatible SRAM replacements with guaranteed long-term availability.

FAQ

What is the minimum supply voltage required for data retention in HM2V8100TTI5SSPE?

The HM2V8100TTI5SSPE guarantees data retention down to 2.0 V when operated in battery backup mode (CS2 low), with typical retention current of 0.8 µA at 3.0 V. This specification is validated across the full –40°C to +85°C temperature range and enables reliable operation during brown-out conditions without external supervision circuits. HM2V8100TTI5SSPE retains data as long as VCC remains ≥2.0 V and CS2 is asserted.

Does HM2V8100TTI5SSPE support true static operation without clocks or refresh signals?

Yes, HM2V8100TTI5SSPE is a fully static CMOS SRAM using a 6-transistor memory cell architecture - it requires no clocks, no refresh cycles, and no timing strobes. All operations are controlled solely by address, CS1/CS2, WE, and OE transitions. This eliminates dynamic power spikes and timing complexity, making HM2V8100TTI5SSPE ideal for deterministic real-time systems where predictability is critical.

What is the maximum access time specification for HM2V8100TTI5SSPE over its full operating temperature range?

The HM2V8100TTI5SSPE has a maximum access time of 55 ns across its entire specified operating temperature range of –40°C to +85°C and supply voltage range of 4.5 V to 5.5 V. This value is guaranteed under worst-case conditions and includes address-to-data valid delay (tAA), chip-select-to-output (tACS1/tACS2), and output-enable-to-valid (tOE) timing - all measured with 50 pF load and 1.5 V reference level.

Can HM2V8100TTI5SSPE be used as a direct replacement for HM628100LTTI-5SL?

Yes, HM2V8100TTI5SSPE shares identical electrical specifications, pinout, timing, and package (44-pin TSOP II TTP-44DE) with HM628100LTTI-5SL, including 55 ns access time, 5.0 V ±10% supply, and –40°C to +85°C operation. Both are members of the HM628100I Series and differ only in marking and minor internal process revisions - HM2V8100TTI5SSPE is a Renesas-branded continuation of the original Hitachi part.

What are the key thermal and mechanical characteristics of the HM2V8100TTI5SSPE package?

The HM2V8100TTI5SSPE uses a 44-pin plastic TSOP II package (Hitachi code TTP-44DE) measuring 18.41 mm × 10.16 mm with 0.8 mm lead pitch and 0.13 mm plating thickness. Its mass is 0.43 g, and it is rated for reflow soldering per JEDEC J-STD-020. Thermal resistance (θJA) is not explicitly published, but the package is qualified for operation up to +85°C ambient with ≤20 mW average power dissipation - consistent with its 10 mW/MHz active power rating.