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Analog Devices Inc. HMC1093-SX

Part No.:
HMC1093-SX
Manufacturer:
Analog Devices Inc.
Category:
RF Mixers
Package:
Module
Datasheet:
AetrixHMC1093-SX.pdf
Description:
IC MMIC IQ MIXER DIE
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,724

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Product details

Overview

HMC1093-SX from Analog Devices (formerly Hittite Microwave) is a GaAs MMIC sub-harmonically pumped (×4) mixer die designed for millimeter-wave downconversion in 37–46.5 GHz RF systems with DC–7.5 GHz IF output and -1 dBm LO drive. It integrates an on-die LO amplifier, delivers 9–13 dB conversion loss, 20 dB 4LO-to-RF isolation, and operates from -55°C to +85°C at +3 V supply. Used in 38/42 GHz microwave radios and military communications.

For engineers reviewing the HMC1093-SX datasheet, HMC1093-SX pinout, HMC1093-SX application, or HMC1093-SX equivalent, this page provides verified RF performance data, die-level mounting guidance, thermal limits, bond pad functions, and substitution options for high-frequency transceiver design.

Technical Context

The HMC1093-SX implements a sub-harmonic (×4) mixing architecture using GaAs PHEMT technology, enabling direct downconversion without requiring fundamental LO frequency generation at 37–46.5 GHz. Its integrated two-stage LO amplifier operates from a single +3 V bias and accepts only -1 dBm LO input power.

All ports-RF, LO, and IF-are impedance-matched to 50 Ω; RF and LO are AC-coupled while IF is DC-coupled. The die bottom serves as RF/DC ground, and thermal resistance is 66.7 °C/W (channel-to-die bottom), with absolute max channel temperature of 175 °C.

Key Specifications

Parameter Value and Actual Design Meaning
RF Frequency Range 37–46.5 GHz: Full-band operation across three sub-bands (37–40 / 40–43 / 43–46.5 GHz) with specified performance per band.
LO Frequency Range 8.5–11 GHz: Enables ×4 sub-harmonic pumping; eliminates need for 37–46.5 GHz LO source.
IF Frequency Range DC–7.5 GHz: Supports baseband and low-IF architectures without external IF filtering constraints.
Conversion Loss 9–13 dB typical: Measured at TA = +25°C, Vdd = +3 V, USB, defining signal path attenuation in downconverter use.
4LO-to-RF Isolation 20 dB typical: Reduces LO leakage into RF path, minimizing need for external LO-RF diplexer or filter.
Input IP3 21–30 dBm typical: Indicates linearity headroom for multi-carrier or high-dynamic-range microwave radio receivers.
Idd 140–210 mA: Total supply current across temperature and RF frequency; impacts thermal management and bias network design.

Pinout & Package

Package: Bare die, 1.45 × 3.85 × 0.1 mm (0.057 × 0.152 × 0.004 in), gold backside metallization, ESD-sensitive Class 0 (150 V HBM).

Pin/Terminal Circuit Role Design Meaning
Pad 1 (RF) Radio Frequency Input AC-coupled, 50 Ω matched port; requires minimal-length wire bond (<0.31 mm) to microstrip feedline.
Pad 2 (IF) Intermediate Frequency Output DC-coupled, 50 Ω matched port; enables baseband interfacing without external blocking capacitor.
Pad 3 (LO) Local Oscillator Input AC-coupled, 50 Ω matched port; accepts -1 dBm LO drive for ×4 sub-harmonic operation.
Pads 4–6 (Vdd1/Vdd2/Vdd3) LO Amplifier Power Supply Three dedicated bias inputs requiring external bypassing (100 pF, 0.01 µF, 4.7 µF) for stable LO gain and noise performance.
Die Bottom Ground Reference Must be eutectically or conductively epoxy-mounted to RF/DC ground plane; forms primary thermal and electrical return path.

Key Features

Feature Design Value
Sub-harmonic (×4) LO pumping Enables use of 8.5–11 GHz LO synthesizers instead of costly 37–46.5 GHz sources, reducing system complexity and cost.
Integrated LO amplifier Single +3 V bias, two-stage GaAs PHEMT amplifier eliminates external LO buffer, saving board space and power.
High 4LO-to-RF isolation (20 dB) Minimizes LO radiation into antenna path, relaxing filtering requirements and improving receiver spurious performance.
DC-coupled IF port Supports zero-IF and complex I/Q architectures without DC-blocking components, simplifying IF chain design.
Gold bond pads & backside metallization Ensures reliable thermosonic wedge or ball bonding with 0.025 mm Au wire and robust thermal conduction to ground plane.

Applications

38 GHz Point-to-Point Radio 42 GHz Backhaul Transceiver

Use Scenario: High-capacity licensed microwave link operating in 37–40 GHz band with stringent EVM and adjacent-channel rejection requirements.

IC Role / Device Role / Timing Role: Downconverting RF signal to baseband IQ for digital demodulation in outdoor unit (ODU) RF front-end.

Use Value: Sub-harmonic architecture avoids 38 GHz LO synthesis; 9 dB typ. conversion loss preserves SNR in low-power ODU designs.

Use Scenario: Compact 42 GHz E-band backhaul system requiring small form factor, low power consumption, and wide IF bandwidth.

IC Role / Device Role / Timing Role: Core downconverter in dual-polarized transceiver module, supporting 2×2 MIMO with DC–7.5 GHz IF output.

Use Value: DC-coupled IF enables direct connection to ADC; 20 dB 4LO-to-RF isolation reduces cross-polar interference in dense antenna arrays.

Military SATCOM Terminal Millimeter-Wave Test Instrument Front-End

Use Scenario: Ruggedized airborne SATCOM terminal operating across full 37–46.5 GHz band under extended temperature (-55°C to +85°C).

IC Role / Device Role / Timing Role: Wideband downconverter in LRU-level up/down-converter assembly, handling multiple RF channels simultaneously.

Use Value: Specified performance across all sub-bands ensures consistent link budget; 30 dBm input IP3 supports high-dynamic-range jammer-resistant reception.

Use Scenario: Modular signal analyzer or vector network analyzer option module requiring calibrated, broadband downconversion capability.

IC Role / Device Role / Timing Role: First-stage mixer in harmonic sampling receiver architecture, leveraging sub-harmonic pumping for flexible LO planning.

Use Value: Minimal bond-wire sensitivity and 50 Ω matched ports enable repeatable calibration; die size allows integration into compact test head assemblies.

Equivalent & Alternatives

The following parts are listed as comparable options for similar sub-harmonic mixer applications.

Alternative Part Technical Difference Application Difference Selection Advice
HMC1113-SX Wider RF range (33–50 GHz), higher conversion loss (11–15 dB), same ×4 architecture and +3 V LO amplifier. Better suited for 5G FR2 and E-band test equipment where broader coverage outweighs insertion loss penalty. Select when RF band extension beyond 46.5 GHz is required; verify LO drive and thermal derating at upper band edge.
QPC1006 GaAs pHEMT passive mixer, no integrated LO amp; requires +13 dBm LO drive; 37–48 GHz RF, 10–12 dB conversion loss. Lower power consumption but demands high-power LO synthesis; used in fixed infrastructure where LO power is available. Choose for ultra-low DC power systems where external LO amplification is acceptable and layout allows larger LO routing.

Compared with HMC1093-SX, HMC1113-SX trades insertion loss for wider RF bandwidth, while QPC1006 eliminates LO amplifier complexity at the cost of +14 dBm additional LO drive-making HMC1093-SX optimal for compact, low-LO-power 38/42 GHz radios.

Availability

HMC1093-SX is available at Aetrix Electronics and suitable for 38 GHz microwave radio, 42 GHz backhaul, and military SATCOM applications requiring stable component supply, traceable sourcing, and long-term lifecycle support.

Supply support for HMC1093-SX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Analog Devices acquired Hittite Microwave in 2014 and maintains its high-frequency RF IC portfolio, specializing in microwave, mmWave, and RF front-end solutions for defense, communications, and instrumentation.

The HMC1093-SX belongs to Hittite's legacy GaAs MMIC mixer family, engineered specifically for sub-harmonic downconversion in licensed E-band wireless infrastructure and ruggedized military platforms.

FAQ

What is the recommended LO drive level for the HMC1093-SX?

The HMC1093-SX is characterized and optimized for -1 dBm LO drive across its full 8.5–11 GHz LO range. Using -1 dBm ensures specified conversion loss (9–13 dB), IP3 (21–30 dBm), and isolation (20 dB). Deviations outside ±1 dB may degrade linearity or increase conversion loss; the datasheet does not guarantee performance at -5 dBm or +3 dBm without re-characterization.

Does the HMC1093-SX require external matching networks?

No, the HMC1093-SX RF, LO, and IF ports are internally matched to 50 Ω. RF and LO ports are AC-coupled; IF is DC-coupled. External matching is unnecessary when using minimal-length wire bonds (<0.31 mm) to 50 Ω microstrip lines on alumina substrates-per the recommended assembly guidelines in the datasheet.

How is thermal management handled for the HMC1093-SX die?

The HMC1093-SX die must be mounted with its gold backside metallization directly to an RF/DC ground plane via AuSn eutectic or conductive epoxy. Thermal resistance is 66.7 °C/W (channel-to-die bottom); at 210 mA Idd and +85°C ambient, junction temperature reaches ~155°C-within the 175°C absolute maximum. Die mounting and substrate choice critically impact reliability.

Can the HMC1093-SX be used for upconversion?

No, the HMC1093-SX is characterized and specified exclusively for downconversion (RF → IF) with USB (upper sideband) operation. Its functional diagram, biasing, and RF/IF port definitions assume RF input and IF output. Upconversion is not supported, and no performance data is provided for reverse operation.

What ESD precautions apply to the HMC1093-SX?

The HMC1093-SX is Class 0 ESD-sensitive (HBM ≤150 V). Handling requires grounded workstations, ionized air, wrist straps, and ESD-safe packaging (gel pack or waffle tray sealed in conductive bag). Post-opening, store in dry nitrogen; avoid liquid cleaning, surface contact, or unshielded bias transients during testing or mounting.

HMC1093-SX Specifications

Product attributes
Attribute value
Manufacturer:
Analog Devices Inc.
Series:
-
Package/Case:
Module
Packaging:
Tray
Product Status:
Active
RF Type:
-
Frequency:
37GHz ~ 46.5GHz
Number of Mixers:
1
Gain:
-
Noise Figure:
-
Secondary Attributes:
-
Current - Supply:
160mA
Voltage - Supply:
3V
Mounting Type:
Surface Mount
Supplier Device Package:
Module

HMC1093-SX FAQ

1.How can I place an order for HMC1093-SX through Aetrix?

Please submit a Request for Quotation (RFQ) for HMC1093-SX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for HMC1093-SX reliable?

The price and inventory of HMC1093-SX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HMC1093-SX is usually 5 days.

3.What payment methods are accepted for HMC1093-SX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HMC1093-SX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for HMC1093-SX?

HMC1093-SX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your HMC1093-SX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for HMC1093-SX?

For technical support, including HMC1093-SX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HMC1093-SX requirements.

6.How does Aetrix verify that HMC1093-SX is sourced from the original manufacturer or authorized distributors?

All HMC1093-SX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HMC1093-SX meets industry standards.

7.What is the process for return or replacement of HMC1093-SX?

All HMC1093-SX units undergo pre-shipment inspection (PSI). If there is an issue with HMC1093-SX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The HMC1093-SX part is unused and in its original packaging.

Return procedure for HMC1093-SX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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