Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Analog Devices Inc. HMC174MS8E

Part No.:
HMC174MS8E
Manufacturer:
Analog Devices Inc.
Category:
RF Switches
Package:
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Datasheet:
AetrixHMC174MS8E.pdf
Description:
IC RF SWITCH SPDT 3GHZ 8MSOP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,245

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

HMC174MS8E from Analog Devices (formerly Hittite Microwave) is a GaAs MMIC SPDT transmit/receive switch for RF front-end signal routing in cellular/3G and WiMAX systems. It operates from DC to 3 GHz, delivers 0.5 dB typical insertion loss at 2 GHz, +60 dBm input IP3 at 8 V bias, and supports positive CMOS/TTL-compatible control (0/+8 V). Its role is RF path selection between antenna and transceiver/LNA with high linearity and LNA protection capability.

For engineers reviewing the HMC174MS8E datasheet, HMC174MS8E pinout, HMC174MS8E application, or HMC174MS8E equivalent, key selection criteria include its 0.5 dB insertion loss at 2 GHz, +60 dBm IIP3 at 8 V, MSOP-8 package footprint, DC–3 GHz bandwidth, and reflective OFF-state RF ports-critical for high-dynamic-range T/R switching in portable wireless and infrastructure designs.

Technical Context

The HMC174MS8E implements a monolithic GaAs MMIC architecture with integrated bias regulation and on-chip logic enabling single-supply operation from 3–10 V. Its SPDT T/R topology routes RF signals between RFC (common port) and either RF1 or RF2, with both OFF-state ports presenting reflective shorts-minimizing isolation degradation in cascaded stages.

Control is implemented via two digital inputs (A/B) with ±0.2 V tolerance, supporting direct interface to HC/HCT logic families. Switching speed is characterized by 10 ns tRISE/tFALL and 24 ns tON/tOFF, ensuring fast TDD timing alignment in LTE/WiMAX baseband-controlled systems.

Key Specifications

ParameterValue and Actual Design Meaning
Frequency RangeDC to 3 GHz - supports full-band operation across GSM, UMTS, LTE, and WiMAX bands without external tuning.
Insertion Loss (2 GHz)0.5 dB typical - enables minimal RF path attenuation in compact front-end modules.
Input IP3 (0.5–1.0 GHz)+60 dBm at 8 V - ensures low intermodulation distortion in multi-carrier base station repeaters.
Isolation (1 GHz)26 dB typical - prevents transmit leakage into receive paths during TDD transitions.
Return Loss (1 GHz)25 dB typical - maintains 50 Ω impedance match across RF ports, reducing VSWR-induced power loss.
Switching Time10 ns rise/fall - meets sub-100 ns TDD guard interval requirements in FDD/TDD hybrid radios.
Supply Voltage Range3–10 V - allows flexible biasing for performance vs. power trade-offs in battery-powered telematics.

Pinout & Package

Package: RoHS-compliant MSOP-8 (14.8 mm²), matte tin-plated copper alloy leadframe, MSL1 rated (260 °C peak reflow).

Pin/TerminalCircuit RoleDesign Meaning
1 (A)Control Input ADigital select line; 0 V = OFF, Vdd = ON state for RF1 path per truth table.
2 (B)Control Input BDigital select line; complementary to A; defines RF2 path activation when A=0, B=Vdd.
3 (RFC)Common RF PortTransmit/receive shared port; DC-coupled, requires external blocking capacitor for AC-coupled systems.
4 (Vdd)Positive SupplyBias input (3–10 V); higher voltage increases P1dB and IP3 but raises current draw.
5 (RF1)RF Path 1Reflective short when OFF; matched to 50 Ω when ON; used for TX or RX path selection.
6, 7 (GND)Ground TerminalsRF/DC ground reference; must be soldered directly to PCB ground plane for optimal isolation and return loss.
8 (RF2)RF Path 2Reflective short when OFF; identical electrical behavior to RF1; enables dual-path redundancy or diversity switching.

Key Features

FeatureDesign Value
CMOS/TTL-Compatible Control0/+8 V logic interface eliminates level-shifting circuitry in 3.3 V/5 V digital baseband designs.
Reflective OFF-State PortsRF1 and RF2 present short circuits when inactive-reducing isolation sensitivity to external matching networks.
High Linearity at Low Current+60 dBm IIP3 achieved with only 495 µA supply current at 10 V, enabling efficient high-power front ends.
Wideband DC–3 GHz OperationNo external matching required across entire frequency range-simplifies layout and reduces BOM count.
Robust ESD ProtectionHBM Class 1A rating (≥250 V) ensures handling safety during SMT assembly without special precautions beyond standard ESD protocols.

Applications

Infrastructure & RepeatersCellular/3G & WiMAX Base Stations

Use Scenario: Bidirectional signal routing in outdoor repeater units amplifying uplink/downlink bands simultaneously.

IC Role / Device Role / Timing Role: SPDT T/R switch isolating TX and RX paths while maintaining <0.5 dB loss across 1.7–2.7 GHz bands.

Use Value: Enables single-antenna full-duplex operation with 26 dB isolation at 2 GHz, preventing self-interference and meeting 3GPP ACLR requirements.

Use Scenario: Front-end switching in small-cell base stations supporting LTE FDD and WiMAX 802.16e protocols.

IC Role / Device Role / Timing Role: Antenna multiplexing between transceiver IC and power amplifier/LNA chains with sub-24 ns switching latency.

Use Value: Delivers +60 dBm IIP3 at 8 V bias, allowing multi-carrier operation without spectral regrowth in 20 MHz channel bandwidths.

Portable Wireless TerminalsLNA Protection Circuits

Use Scenario: Mode switching in handheld 4G/5G modems requiring simultaneous GPS, BT, and cellular band support.

IC Role / Device Role / Timing Role: RF path selector routing antenna signals between multiple radios with minimal insertion loss and harmonic generation.

Use Value: Achieves <−70 dBc 2nd/3rd harmonics at 1900 MHz with 8 V bias, easing front-end filtering requirements and reducing PCB area.

Use Scenario: Transmit surge protection in automotive telematics modules where high-power TX bursts could damage sensitive LNAs.

IC Role / Device Role / Timing Role: Fast-acting T/R switch diverting RF energy away from LNA input during TX events using 10 ns edge response.

Use Value: Reflective OFF-state design provides inherent 30+ dB isolation without external circulators, lowering system cost and size.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SPDT T/R switch applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
Qorvo QM110360.6 dB IL @ 2.5 GHz; +55 dBm IIP3 @ 5 V; 3.3 V only supply; 10-pin QFN.Optimized for 5G NR sub-6 GHz; lower power consumption but reduced linearity headroom.Prefer for space-constrained 5G CPE designs where 3.3 V bias suffices and 5 dBm IIP3 margin is acceptable.
Skyworks SKY13370-374LF0.45 dB IL @ 2.1 GHz; +57 dBm IIP3 @ 5 V; integrated DC blocking caps; 6-pin SOT-6.Targeted at smartphone front-ends; smaller footprint but limited to 2.7 GHz max frequency.Choose for mobile handset designs needing ultra-low IL and integrated capacitors-though not suitable for 3 GHz WiMAX.

Compared with QM11036 and SKY13370-374LF, the HMC174MS8E offers superior linearity (+60 dBm IIP3) and full 3 GHz bandwidth in an industry-standard MSOP-8, making it preferred for infrastructure-grade repeaters and test equipment requiring wide dynamic range and DC coupling flexibility.

Availability

HMC174MS8E is available at Aetrix Electronics and suitable for infrastructure repeaters, cellular/3G base stations, and portable wireless terminals requiring stable component supply, long-lifecycle support, and consistent RF performance across temperature.

Supply support for HMC174MS8E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Analog Devices acquired Hittite Microwave in 2014, integrating its high-frequency RF/Microwave portfolio into a leading precision analog and RF solutions provider.

The HMC174MS8E belongs to Hittite's GaAs MMIC SPDT switch product line, engineered for high-linearity, wideband T/R switching in wireless infrastructure, test instrumentation, and automotive telematics where DC–3 GHz coverage and robust intermodulation performance are critical.

FAQ

What is the maximum operating frequency of the HMC174MS8E?

The HMC174MS8E operates from DC to 3 GHz, with verified performance up to 3.0 GHz across all key RF parameters-including insertion loss (1.3 dB max), isolation (15 dB min), and return loss (12 dB min)-as specified in the official datasheet v04.0109. This full-band capability supports LTE Band 42/43, WiMAX 2.5/3.5 GHz, and unlicensed 5.8 GHz ISM adjacent bands with margin.

Does the HMC174MS8E require external DC blocking capacitors?

Yes, the HMC174MS8E requires external DC blocking capacitors on all three RF ports (RFC, RF1, RF2), as stated in the "Typical Application Circuit" and "Pin Descriptions" sections of the datasheet. The device is DC-coupled internally, and blocking capacitors define the low-frequency cutoff-capacitor value selection directly determines minimum operational frequency.

What is the recommended supply voltage for optimal linearity in the HMC174MS8E?

The HMC174MS8E achieves its highest linearity-+60 dBm input third-order intercept-at 8 V bias, as confirmed in the Electrical Specifications table and Input IP3 vs. Vdd plot. While functional from 3–10 V, 8 V is the recommended supply for applications demanding maximum IIP3, such as multi-carrier repeaters and high-dynamic-range test equipment.

How does the HMC174MS8E handle OFF-state RF ports?

The HMC174MS8E presents reflective shorts at RF1 and RF2 when those paths are OFF, as explicitly documented in the General Description: "RF1 and RF2 are reflective shorts when 'OFF'." This design improves isolation stability across frequency and simplifies external matching network requirements compared to absorptive switch architectures.

Is the HMC174MS8E pin-compatible with the non-RoHS HMC174MS8?

Yes, the HMC174MS8E is pin-compatible with the HMC174MS8, sharing identical MSOP-8 footprint, pinout, and electrical functionality. The sole difference is RoHS compliance: HMC174MS8E uses 100% matte Sn lead finish and has MSL1 rating with 260 °C peak reflow, whereas HMC174MS8 uses Sn/Pb and 235 °C reflow-both parts use the same H174 marking and mechanical outline.

HMC174MS8E Specifications

Product attributes
Attribute value
Manufacturer:
Analog Devices Inc.
Series:
-
Package/Case:
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging:
Strip
Product Status:
Obsolete
RF Type:
WiMax
Topology:
Reflective
Circuit:
SPDT
Frequency Range:
0Hz ~ 3GHz
Isolation:
20dB
Insertion Loss:
1.3dB
Test Frequency:
3GHz
P1dB:
36dBm
IIP3:
56dBm
Features:
-
Impedance:
50Ohm
Voltage - Supply:
3V ~ 8V
Operating Temperature:
-40°C ~ 85°C
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-MSOP

HMC174MS8E FAQ

1.How can I place an order for HMC174MS8E through Aetrix?

Please submit a Request for Quotation (RFQ) for HMC174MS8E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for HMC174MS8E reliable?

The price and inventory of HMC174MS8E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HMC174MS8E is usually 5 days.

3.What payment methods are accepted for HMC174MS8E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HMC174MS8E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for HMC174MS8E?

HMC174MS8E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your HMC174MS8E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for HMC174MS8E?

For technical support, including HMC174MS8E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HMC174MS8E requirements.

6.How does Aetrix verify that HMC174MS8E is sourced from the original manufacturer or authorized distributors?

All HMC174MS8E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HMC174MS8E meets industry standards.

7.What is the process for return or replacement of HMC174MS8E?

All HMC174MS8E units undergo pre-shipment inspection (PSI). If there is an issue with HMC174MS8E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The HMC174MS8E part is unused and in its original packaging.

Return procedure for HMC174MS8E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

HMC174MS8E Tags

  • HMC174MS8E
  • HMC174MS8E PDF
  • HMC174MS8E Datasheet
  • HMC174MS8E Specifications
  • HMC174MS8E Images
  • Analog Devices Inc.
  • Analog Devices Inc. HMC174MS8E
  • Buy HMC174MS8E
  • HMC174MS8E Price
  • HMC174MS8E Distributor
  • HMC174MS8E Supplier
  • HMC174MS8E Wholesale
Related Products
BGS13SN8E6327XTSA1
BGS13SN8E6327XTSA1

Infineon Technologies

BGS12WN6E6327XTSA1
BGS12WN6E6327XTSA1

Infineon Technologies

BGS12P2L6E6327XTSA1
BGS12P2L6E6327XTSA1

Infineon Technologies

BGS12PN10E6327XTSA1
BGS12PN10E6327XTSA1

Infineon Technologies

NJG1801K75-TE1
NJG1801K75-TE1

Nisshinbo Micro Devices Inc.

BGS14PN10E6327XTSA1
BGS14PN10E6327XTSA1

Infineon Technologies

SKY13348-374LF
SKY13348-374LF

Skyworks Solutions Inc.

4259-63
4259-63

pSemi

PE42421SCAA-Z
PE42421SCAA-Z

pSemi

AS179-92LF
AS179-92LF

Skyworks Solutions Inc.

SKY13351-378LF
SKY13351-378LF

Skyworks Solutions Inc.

AS215-92LF
AS215-92LF

Skyworks Solutions Inc.

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER