Analog Devices Inc. HMC174MS8TR

Overview

HMC174MS8TR from Analog Devices (formerly Hittite Microwave) is a GaAs MMIC SPDT transmit/receive switch for DC–3 GHz RF front-ends, delivering 0.5 dB typical insertion loss at 2 GHz, +60 dBm input IP3 at 8 V bias, and 26 dB isolation at 1 GHz. It operates with single positive supply (3–8 V), CMOS/TTL-compatible control inputs, and supports LNA protection and cellular/3G/WiMAX T/R switching.

For engineers reviewing the HMC174MS8TR datasheet, HMC174MS8TR pinout, HMC174MS8TR application, or HMC174MS8TR equivalent, key selection criteria include its reflective OFF-state RF ports, 10 ns RF rise/fall time, MSOP-8 package footprint, and verified performance across –40°C to +85°C operating temperature range.

Technical Context

The HMC174MS8TR implements a monolithic GaAs MMIC architecture with integrated bias regulation and complementary control logic enabling true single-supply operation. Its RF path uses reflective SPDT topology where RFC connects to either RF1 or RF2 depending on A/B logic state, while unselected port presents a reflective short.

Control interface accepts 0/+Vdd logic levels (±0.2 V tolerance) with sub-100 µA quiescent current per control line. Bias voltage directly scales RF power handling: P1dB rises from 32 dBm at 3 V to 36 dBm at 8 V, and IP3 improves from +55 dBm to +60 dBm over same range.

Key Specifications

Pinout & Package

Package: MSOP-8 (3.0 × 3.0 × 0.85 mm, 14.8 mm² footprint), Sn/Pb lead finish, MSL1 rated, low-stress molded plastic body. All ground pins (6, 7) must be soldered to PCB RF ground plane; RFC/RF1/RF2 are DC-coupled 50 Ω ports requiring external blocking capacitors.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SPDT T/R switch applications.

Compared with HMC174MS8E, the HMC174MS8TR provides identical RF performance in Sn/Pb assembly environments, while QM11036 trades supply complexity for wider bandwidth and marginally better loss-making HMC174MS8TR optimal for cost-sensitive, single-rail 3G/WiMAX infrastructure designs.

Availability

HMC174MS8TR is available at Aetrix Electronics and suitable for infrastructure repeaters, cellular/3G base stations, and automotive telematics modules requiring stable component supply, long-lifecycle support, and traceable sourcing.

Supply support for HMC174MS8TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Analog Devices acquired Hittite Microwave in 2014 and integrates its high-frequency RF portfolio into precision analog and RF solutions for communications, defense, and instrumentation markets.

The HMC174MS8TR belongs to Hittite's legacy GaAs MMIC SPDT switch family, engineered specifically for high-linearity, low-loss T/R switching in wireless infrastructure and portable radio front-ends.

FAQ

What is the maximum RF input power the HMC174MS8TR can handle without compression?

The HMC174MS8TR delivers 32 dBm input P1dB at 0.5–1.0 GHz with 3 V bias, rising to 36 dBm at 8 V bias. At 0.5–3.0 GHz, P1dB remains 32 dBm minimum under 3 V and reaches 36 dBm at 8 V. These values are measured in a 50 Ω system at +25°C and define the RF power level where gain compresses by 1 dB-critical for setting PA back-off in repeater designs using the HMC174MS8TR.

Does the HMC174MS8TR require external termination resistors on RF1 or RF2 when OFF?

No. The HMC174MS8TR features reflective OFF-state ports: RF1 and RF2 present a short circuit (not open) when unselected, eliminating need for external 50 Ω terminations. This simplifies PCB layout, reduces component count, and avoids power dissipation in termination networks-key for compact LNA protection circuits using the HMC174MS8TR.

Can the HMC174MS8TR operate with 3.3 V logic control signals while biased at 5 V?

Yes. Control inputs A and B accept 0 V / Vdd logic levels with ±0.2 V tolerance. When Vdd = 5 V, driving A/B with 0 V / 3.3 V satisfies the "0 / Vdd" condition per truth table, enabling reliable switching. This interoperability allows use of standard 3.3 V CMOS logic (e.g., 74LVC) to control the HMC174MS8TR without level shifters.

What is the thermal performance of the HMC174MS8TR across temperature extremes?

The HMC174MS8TR is characterized from –40°C to +85°C. Insertion loss increases by ≤0.3 dB, isolation degrades by ≤3 dB, and P1dB drops by ≤2 dB across this range at 2 GHz. These shifts are documented in datasheet plots, confirming robust operation in automotive telematics enclosures and outdoor repeater housings where ambient temperature varies widely-validating HMC174MS8TR for such deployments.

Is the HMC174MS8TR pin-compatible with the HMC174MS8E variant?

Yes. HMC174MS8TR and HMC174MS8E share identical pinout, package dimensions, and electrical specifications. The sole differences are lead finish (Sn/Pb vs. 100% matte Sn) and MSL rating (235°C vs. 260°C peak reflow). Therefore, HMC174MS8TR can be substituted for HMC174MS8E in Sn/Pb assembly processes, and vice versa in RoHS lines-both are mechanically and electrically interchangeable in designs using the HMC174MS8TR footprint.