Analog Devices Inc. HMC220BMS8GETR

Overview

HMC220BMS8GETR from Analog Devices is a GaAs MMIC fundamental double-balanced mixer operating from 5 GHz to 12 GHz RF, with DC–4 GHz IF bandwidth and no external bias or matching required. It delivers 9.5 dB typical conversion loss at 10 dBm LO drive, 31 dB typical LO-to-RF isolation, and supports both upconversion and downconversion in microwave radio and satellite communication systems.

For engineers reviewing the HMC220BMS8GETR datasheet, HMC220BMS8GETR pinout, HMC220BMS8GETR application, or HMC220BMS8GETR equivalent, key selection criteria include its wideband IF response (DC–4 GHz), ultrasmall 8-lead MINI_SO_EP package with exposed pad, RoHS-compliant surface-mount construction, and absence of dc bias requirements for rapid integration into high-frequency transceivers.

Technical Context

The HMC220BMS8GETR implements a monolithic GaAs Schottky diode core with integrated planar transformer baluns, enabling double-balanced operation without external components. Its architecture provides inherent suppression of even-order harmonics and strong LO-to-RF/IF isolation via optimized balun symmetry.

It operates as a fundamental mixer-no subharmonic pumping-supporting both lower- and upper-sideband downconversion/upconversion across its full 5–12 GHz RF range. The device requires only ac-coupled 50 Ω LO and RF ports and a dc-coupled IF port capable of sinking/sourcing ≤3 mA.

Key Specifications

Pinout & Package

Package: 8-Lead Mini Small Outline Package with Exposed Pad (MINI_SO_EP, JEDEC MO-187-AA-T, package option RH-8-1), 3.0 mm × 3.0 mm body, 0.75 mm height, exposed thermal pad requiring low-impedance RF/dc ground connection.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar fundamental mixer applications.

Compared with HMC220BMS8GETR, HMC220BMS8GE offers identical RF performance in cut-tape form for flexibility, while QPC1006 trades passive simplicity and low noise for active gain-requiring additional biasing and increasing overall system noise floor.

Availability

HMC220BMS8GETR is available at Aetrix Electronics and suitable for microwave radio, satellite communication terminals, and military electronic warfare subsystems requiring stable component supply across extended temperature ranges and high-frequency reliability.

Supply support for HMC220BMS8GETR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Analog Devices, Inc. is a global leader in high-performance analog, mixed-signal, and RF ICs, serving precision instrumentation, communications, and defense markets since 1965.

The HMC220BMS8GETR belongs to Analog Devices' Hittite Microwave MMIC product line, engineered specifically for broadband microwave front-end applications demanding small size, high isolation, and minimal external components.

FAQ

What is the recommended LO drive level for optimal performance of the HMC220BMS8GETR?

The HMC220BMS8GETR achieves best balance of conversion loss, IIP3, and noise figure at 10 dBm LO drive. At this level, typical conversion loss is 9.5 dB, IIP3 is 17 dBm, and SSB noise figure is 9.5 dB. Operation from 7–13 dBm is supported, with IIP3 improving to 18.5 dBm at 13 dBm-but conversion loss increases slightly to 9 dB. HMC220BMS8GETR must not be driven below 7 dBm or above 25 dBm per absolute maximum ratings.

Can the HMC220BMS8GETR be used for zero-IF (direct-conversion) receiver designs?

Yes, the HMC220BMS8GETR supports zero-IF operation because its IF port is dc-coupled and functional from DC to 4 GHz. When used in a direct-conversion receiver, the IF output passes baseband signals without high-pass filtering. However, designers must ensure the IF load does not source or sink more than ±3 mA to avoid malfunction-HMC220BMS8GETR will fail if this current limit is exceeded.

Is the NIC pin (Pin 4) of the HMC220BMS8GETR required to be grounded?

No, Pin 4 (NIC) of the HMC220BMS8GETR is Not Internally Connected and has no electrical function. It may be left floating or soldered to ground-neither choice affects RF performance, conversion loss, isolation, or thermal behavior. This pin exists solely for mechanical symmetry and package compatibility; HMC220BMS8GETR operation is fully independent of NIC pin treatment.

What thermal design guidelines apply to the exposed pad of the HMC220BMS8GETR?

The exposed pad (EPAD) of the HMC220BMS8GETR must be soldered to a low-impedance thermal and electrical ground plane using ≥9 solder paste vias (0.3 mm diameter, spaced ≤1 mm apart) under the pad. Per datasheet, thermal resistance θJC is 180°C/W and θJA is 104.7°C/W on a JEDEC 2S2P board-failure to implement adequate thermal vias risks junction temperatures exceeding 175°C at full 495 mW dissipation, triggering permanent damage.

Does the HMC220BMS8GETR support both upconversion and downconversion in the same circuit?

Yes, the HMC220BMS8GETR is bidirectional: it functions identically as an upconverter (IF→RF) or downconverter (RF→IF) without hardware change. In upconversion, IF (DC–4 GHz) modulates the LO to generate RF (5–12 GHz); in downconversion, RF is translated to IF. Performance metrics-including conversion loss, IIP3, and isolation-are specified for both modes in the datasheet, and HMC220BMS8GETR requires no configuration pins or external switches to toggle between them.