Analog Devices Inc. HMC258LC3B

Overview

HMC258LC3B from Analog Devices (formerly Hittite Microwave) is a GaAs MMIC sub-harmonically pumped (×2) mixer with integrated LO amplifier, operating from 14.5–19.5 GHz RF, 7.25–10 GHz LO, and DC–3.5 GHz IF. It delivers 14 dB typical conversion loss, 14 dB SSB noise figure, and >45 dB 2LO-to-RF isolation at +5 V supply, enabling compact point-to-point radio front-ends.

For engineers reviewing the HMC258LC3B datasheet, HMC258LC3B pinout, HMC258LC3B application, or HMC258LC3B equivalent, this page provides verified RF mixer specifications, package interface details, real-world subsystem integration guidance, and validated alternative options for SATCOM and test equipment designs.

Technical Context

The HMC258LC3B implements a sub-harmonic (×2) mixing architecture requiring only half the LO frequency of the RF band-enabling use of lower-cost, higher-performance 7.25–10 GHz LO sources instead of 14.5–19.5 GHz ones. Its monolithic GaAs design integrates a two-stage +5 V LO amplifier with 0 dBm input drive requirement.

All ports are internally matched to 50 Ω: RF and LO are AC-coupled; IF is DC-coupled (requiring external series capacitor); ground pins (1, 4, 6, 10, 12) must be soldered to PCB RF ground per package thermal and RF return path requirements.

Key Specifications

Pinout & Package

Package: RoHS-compliant 3×3 mm ceramic leadless SMT package (alumina body, gold-over-nickel plating, MSL3, thermal resistance 133.6 °C/W). Ground paddle must be soldered to PCB RF ground plane with multiple vias.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar sub-harmonic mixer applications.

Compared with HMC1048LC3B and QM11020, the HMC258LC3B uniquely combines integrated LO amplification, E-band RF coverage, and >45 dB 2LO isolation-making it the preferred choice for size- and power-sensitive point-to-point radios and ruggedized VSAT terminals.

Availability

HMC258LC3B is available at Aetrix Electronics and suitable for point-to-point radios, VSAT terminals, and test & measurement equipment requiring stable component supply, consistent RF performance, and long-term obsolescence mitigation.

Supply support for HMC258LC3B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Analog Devices acquired Hittite Microwave in 2014 and maintains its high-frequency RF portfolio, specializing in GaAs and GaN MMICs for defense, aerospace, and communications infrastructure.

The HMC258LC3B belongs to Hittite's legacy sub-harmonic mixer product line, engineered specifically for E-band wireless backhaul and SATCOM uplink/downlink subsystems where LO simplification and thermal robustness are critical.

FAQ

What is the recommended LO drive level for optimal performance of the HMC258LC3B?

The HMC258LC3B is specified for 0 dBm LO drive at the LO pin (Pin 5), delivering 14 dB typical conversion loss and 14 dB SSB noise figure. Driving below −2 dBm increases conversion loss; above +2 dBm yields diminishing returns and risks exceeding absolute maximum ratings. The integrated LO amplifier eliminates need for external gain stages.

Does the HMC258LC3B require external matching components on RF, LO, or IF ports?

No. The HMC258LC3B is fully internally matched to 50 Ω on RF (Pin 11) and LO (Pin 5) ports, and DC-coupled on IF (Pin 2) with only an external series capacitor required for DC blocking. No baluns, transformers, or stubs are needed-enabling direct integration into compact RF modules.

What is the thermal management requirement for continuous operation of the HMC258LC3B?

The HMC258LC3B has a channel-to-ground thermal resistance of 133.6 °C/W and max channel temperature of 150 °C. For continuous operation at +85 °C ambient, the exposed ground paddle must be soldered to a thermally robust PCB ground plane with ≥6 thermal vias (0.3 mm diameter) connecting to inner/outer ground layers to maintain junction temperature within specification.

Can the HMC258LC3B be used in both upconverter and downconverter configurations?

Yes. The HMC258LC3B is bidirectional: RF and IF ports are interchangeable per application. In downconversion, RF = 14.5–19.5 GHz input, IF = DC–3.5 GHz output; in upconversion, IF = DC–3.5 GHz input, RF = 14.5–19.5 GHz output. LO remains 7.25–10 GHz in both modes.

What is the meaning of "sub-harmonically pumped (×2)" in the HMC258LC3B datasheet?

Sub-harmonic pumping means the HMC258LC3B uses an LO signal at half the RF frequency (e.g., 8.5 GHz LO generates 17 GHz RF). This leverages second-order nonlinearities in the GaAs diode quad, relaxing LO source requirements and enabling use of lower-frequency, lower-phase-noise synthesizers-critical for E-band system phase noise budgets.