Analog Devices Inc. HMC307QS16GETR

Overview

HMC307QS16GETR from Analog Devices (formerly Hittite Microwave) is a GaAs MMIC 5-bit digital RF attenuator in QSOP-16 package, delivering 1 dB LSB steps across 0–31 dB range with ±0.5 dB typical bit error, DC–4 GHz bandwidth, and 2.2 dB max insertion loss at 4 GHz-used for precision gain control in wireless transceivers.

For engineers reviewing the HMC307QS16GETR datasheet, HMC307QS16GETR pinout, HMC307QS16GETR application, or HMC307QS16GETR equivalent, key selection criteria include attenuation accuracy vs. frequency, IIP3 (+44 dBm), switching speed (140 ns tRISE), bias requirements (–5 V Vee), and QSOP-16 RF layout compatibility.

Technical Context

The HMC307QS16GETR implements a monolithic GaAs MMIC architecture with five independent CMOS-compatible control inputs (V1–V5), each toggling between 0 V and –5 V to select 1/2/4/8/16 dB bits. It operates down to DC via single negative bias (Vee = –5 V ±10%), drawing only 3 mA total supply current.

Its RF path features matched 50 Ω input/output impedance, grounded-base QSOP packaging with exposed paddle for RF grounding, and requires external DC-blocking capacitors (C1/C2) and pull-up resistor (R1 = 5 kΩ) per application circuit-no internal matching or biasing components are integrated.

Key Specifications

Pinout & Package

Package: QSOP-16 (29.4 mm²), RoHS-compliant matte Sn finish, MSL1, with exposed ground paddle requiring solder connection to PCB RF ground plane.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar digital RF attenuator applications.

Compared with HMC235QS16G and QM11036, the HMC307QS16GETR uniquely combines 1 dB LSB resolution, –5 V single-supply operation, and +44 dBm IIP3 in QSOP-16-making it optimal for legacy and high-linearity RF systems where minimal control overhead and DC coupling are required.

Availability

HMC307QS16GETR is available at Aetrix Electronics and suitable for cellular infrastructure, wireless local loop, and MMDS equipment requiring stable component supply, long-lifecycle support, and proven RF performance in production-grade SMT assemblies.

Supply support for HMC307QS16GETR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Analog Devices acquired Hittite Microwave in 2014 and integrates its high-frequency RF portfolio into precision RF signal chain solutions for communications, defense, and instrumentation.

The HMC307QS16GETR belongs to Hittite's legacy GaAs MMIC digital attenuator product line, engineered specifically for broadband wireless infrastructure demanding high linearity, low distortion, and deterministic digital control from DC to 4 GHz.

FAQ

What is the operating voltage requirement for HMC307QS16GETR?

HMC307QS16GETR requires a single negative bias supply: Vee = –5 V ±10%, with typical supply current of 3 mA. Control inputs (V1–V5) toggle between 0 V (logic low) and –5 V (logic high), making it compatible with simple open-collector or CMOS driver circuits without level shifting. The HMC307QS16GETR does not support positive or dual-supply operation.

Does HMC307QS16GETR support DC-coupled RF operation?

Yes, the HMC307QS16GETR supports true DC–4 GHz operation due to its GaAs MMIC grounded-base architecture and –5 V bias scheme. However, external DC-blocking capacitors (C1 and C2) are mandatory on RF1 and RF2 ports per the application circuit to prevent bias feed-through and ensure proper RF matching-these capacitors must be selected based on the lowest operating frequency (e.g., 100 pF for ~100 MHz).

What is the maximum RF input power rating for HMC307QS16GETR?

The absolute maximum RF input power for HMC307QS16GETR is +26 dBm (400 mW), but the recommended maximum for 0.1 dB compression is +24 dBm (250 mW) across 0.5–4 GHz. Exceeding this may cause gain compression or distortion; the HMC307QS16GETR maintains linear operation up to +24 dBm with +44 dBm IIP3, ensuring clean signal handling in high-power front-ends.

How is attenuation accuracy specified across frequency for HMC307QS16GETR?

Attenuation accuracy for HMC307QS16GETR is specified in four frequency/attenuation bands: ±0.2 + 3% of setting (1–20 dB, DC–2.7 GHz), ±0.3 + 5% (21–31 dB, DC–2.7 GHz), ±0.3 + 5% (1–15 dB, 2.7–4 GHz), and ±0.6 + 10% (16–31 dB, 2.7–4 GHz). This graded spec reflects real-world GaAs process variation and ensures predictable behavior in both sub-3 GHz and 4 GHz deployments of the HMC307QS16GETR.

Is HMC307QS16GETR pin-compatible with HMC235QS16G?

No, HMC307QS16GETR is not pin-compatible with HMC235QS16G despite sharing the QSOP-16 package. Pin functions differ: HMC235QS16G uses separate Vdd and Vss pins, while HMC307QS16GETR uses a single Vee pin and ground-referenced control inputs. Layout redesign-including bias routing and decoupling-is required when substituting HMC307QS16GETR for HMC235QS16G.