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Analog Devices Inc. HMC336MS8GETR

Part No.:
HMC336MS8GETR
Manufacturer:
Analog Devices Inc.
Category:
RF Switches
Package:
8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Datasheet:
AetrixHMC336MS8GETR.pdf
Description:
IC RF SWITCH SPDT 6GHZ 8MSOP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,583

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Product details

Overview

HMC336MS8GETR from Analog Devices (formerly Hittite Microwave) is a GaAs MMIC SPDT non-reflective switch with positive control logic, operating from DC to 6 GHz in an MSOP8G package. It delivers 1.6 dB insertion loss and 42 dB isolation at 6 GHz, requires +5 V bias and 0/+5 V control signals, and supports both 50-Ω and 75-Ω systems for RF signal routing in broadband infrastructure.

For engineers reviewing the HMC336MS8GETR datasheet, HMC336MS8GETR pinout, HMC336MS8GETR application, or HMC336MS8GETR equivalent, key selection criteria include its non-reflective architecture, DC-coupled RF ports requiring external blocking capacitors, temperature-stable RF performance from –40°C to +85°C, and compatibility with high-speed switching (<20 ns tON/tOFF) in 5G front-end and test instrumentation designs.

Technical Context

The HMC336MS8GETR implements a GaAs MESFET-based SPDT topology with integrated DC blocking capacitor interfaces at RFC, RF1, and RF2 - enabling true DC-to-6 GHz operation when externally biased. Its non-reflective design terminates off-state ports into 50 Ω, minimizing system-level VSWR degradation during switching.

It uses dual positive-control inputs (CTLA/CTLB) with truth-table-defined path selection, fixed +5 V VDD bias (35 µA typical), and operates without negative supply rails. All ground leads plus the exposed paddle must be soldered to PCB RF ground per MSL1 reflow profile (260 °C peak for RoHS-compliant HMC336MS8GETR).

Key Specifications

Parameter Value and Actual Design Meaning
Frequency Range DC to 6 GHz - supports baseband through sub-6 GHz wireless, including LTE, WiMAX, and cable DOCSIS 3.1 systems.
Insertion Loss 1.6 dB @ 6 GHz - ensures minimal RF power loss in high-frequency signal paths; increases to ≤2.0 dB max across full band.
Isolation 42 dB @ 6 GHz - prevents crosstalk between RF1 and RF2 paths during state transition; ≥37 dB maintained to 6 GHz.
P1dB Input Power 25 dBm @ 0.5–6 GHz - enables handling of moderate-power transmit/receive signals without compression in active front ends.
IIP3 42 dBm @ 0.5–6 GHz (two-tone, +7 dBm/tone) - preserves linearity in multi-carrier environments such as broadband repeaters.
Switching Speed tON/tOFF = 20 ns - supports fast TDD mode switching in time-division duplexed radios and ATE test sequencing.
Control Logic 0/+5 V positive voltage control - eliminates need for level shifters; compatible with standard CMOS/TTL drivers.

Pinout & Package

Package: MSOP8G (RoHS-compliant, 8-lead surface-mount with exposed ground paddle; MSL1, 260 °C peak reflow).

Pin/Terminal Circuit Role Design Meaning
1 (CTLA) Control input A Positive logic select line; low = RF1 path enabled, high = RF2 path enabled per truth table.
2 (CTLB) Control input B Complementary control input; used with CTLA to define SPDT state; referenced to VDD.
3 (RFC) Common RF port DC-coupled 50 Ω input; requires external blocking capacitor to set low-frequency cutoff.
4 (VDD) Bias supply +5 V DC supply; floating operation degrades P1dB by ~1.5 dB - must be connected for full spec compliance.
5 (RF1) RF output 1 DC-coupled 50 Ω path; terminated internally in non-reflective mode when off; requires blocking capacitor.
6, 7 (GND) Ground terminals Signal and power ground; both pins plus exposed paddle must connect to solid RF ground plane.
8 (RF2) RF output 2 DC-coupled 50 Ω path; identical termination and capacitor requirements as RF1.

Key Features

Feature Design Value
Non-reflective SPDT architecture Terminates off-state RF ports into 50 Ω, maintaining system impedance match and reducing VSWR spikes during switching.
DC-to-6 GHz bandwidth Enables single-component replacement across multiple frequency bands - from baseband I/Q paths to 5G NR n77/n78 front ends.
Positive control interface Eliminates need for negative voltage rails or level translators; directly driven by FPGA GPIO or microcontroller outputs.
Exposed ground paddle Provides low-inductance RF grounding path essential for stable S-parameter performance above 3 GHz.
High linearity (IIP3 = 42 dBm) Supports multi-carrier operation in broadband amplifiers and filter banks without intermodulation distortion.

Applications

Broadband Test Instrumentation Fiber Optic Transceiver Modules

Use Scenario: RF path selection in vector network analyzer (VNA) calibration modules and signal routing matrices.

IC Role / Device Role / Timing Role: Non-reflective SPDT switch routing incident/reflected signals while preserving measurement accuracy.

Use Value: 42 dB isolation at 6 GHz minimizes leakage-induced calibration error; 20 ns switching enables automated multi-port characterization.

Use Scenario: Selecting between redundant optical transmitter paths or multiplexing receive channels in 10G/25G PON systems.

IC Role / Device Role / Timing Role: High-isolation RF switch managing RF-over-fiber uplink/downlink signal paths before modulation/demodulation.

Use Value: 1.6 dB insertion loss preserves link budget; DC coupling supports low-frequency pilot tones used in burst-mode synchronization.

Wireless Infrastructure Front Ends Switched Filter Bank Architectures

Use Scenario: Antenna diversity switching and TDD/FDD mode selection in small cell base stations operating below 6 GHz.

IC Role / Device Role / Timing Role: Signal path selector enabling dynamic RF chain reconfiguration under baseband processor control.

Use Value: +5 V only bias simplifies power delivery; 25 dBm P1dB handles PA output sampling without compression.

Use Scenario: Dynamically selecting bandpass filters in software-defined radio (SDR) receivers covering 100 MHz–6 GHz.

IC Role / Device Role / Timing Role: Low-loss, high-isolation switch routing RF input to one of multiple parallel filter branches.

Use Value: Non-reflective design prevents filter detuning; 6 GHz bandwidth covers all cellular, ISM, and unlicensed bands.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SPDT switch applications.

Alternative Part Technical Difference Application Difference Selection Advice
Qorvo QM11036 Si-based SPDT, 0.1–6.0 GHz, 2.0 dB IL @ 6 GHz, 39 dB isolation @ 6 GHz, +3.3 V control. Lower power consumption (15 µA bias), but reduced linearity (IIP3 = 38 dBm) and narrower DC coupling support. Preferred for battery-powered SDRs where supply voltage headroom is constrained; not suitable for DC-coupled baseband paths.
Skyworks SKY13372-374LF Si-based SPDT, 0.01–6.0 GHz, 1.5 dB IL @ 6 GHz, 43 dB isolation @ 6 GHz, +1.8/+3.3 V control. Wider low-frequency extension (10 MHz), but requires dual-supply bias and lacks exposed paddle for mmWave stability. Best for wideband receiver front ends needing sub-100 MHz coverage; less optimal for >4 GHz phase-sensitive applications.

Compared with QM11036 and SKY13372-374LF, the HMC336MS8GETR uniquely combines GaAs-level linearity (42 dBm IIP3), true DC coupling, and non-reflective termination - making it the only option among the three qualified for precision RF test equipment and DC-coupled I/Q modulator interfaces.

Availability

HMC336MS8GETR is available at Aetrix Electronics and suitable for broadband test instrumentation, fiber optic transceiver modules, and wireless infrastructure front ends requiring stable component supply, long-term lifecycle support, and traceable RoHS-compliant sourcing.

Supply support for HMC336MS8GETR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Analog Devices acquired Hittite Microwave in 2014 and integrates its high-frequency RF portfolio into ADI's broader signal chain solutions, emphasizing performance, reliability, and design-in support.

The HMC336MS8GETR belongs to Hittite's legacy GaAs MMIC switch family, engineered specifically for high-isolation, low-loss RF signal routing in test, defense, and communications systems demanding DC-to-6 GHz bandwidth.

FAQ

What is the recommended DC blocking capacitor value for HMC336MS8GETR RF ports?

The HMC336MS8GETR requires external DC blocking capacitors at RFC, RF1, and RF2 to enable DC-to-RF operation. For full-band coverage down to 10 MHz, 100 pF capacitors (e.g., 0402, NP0/C0G) are typically used. Lower values (e.g., 10 pF) raise the low-frequency cutoff - the exact value determines the lowest usable transmission frequency per application needs. HMC336MS8GETR datasheet Figure 10 shows return loss vs. frequency with 100 pF caps.

Does HMC336MS8GETR require a negative supply voltage?

No, the HMC336MS8GETR operates exclusively on a +5 V DC supply (VDD) and 0/+5 V positive control voltages (CTLA/CTLB). It does not require negative rails or level-shifting circuitry, simplifying integration with standard digital controllers. Floating VDD degrades P1dB by ~1.5 dB, so connection is mandatory for full HMC336MS8GETR specification compliance.

How is thermal performance managed in HMC336MS8GETR?

HMC336MS8GETR features an exposed ground paddle that must be soldered to the PCB RF ground plane to ensure effective heat dissipation and stable RF performance. Thermal resistance (θJA) is optimized via this paddle; operation over –40°C to +85°C ambient is specified with proper PCB layout. No external heatsink is required for typical 25 dBm P1dB operation.

Can HMC336MS8GETR be used in 75-Ohm systems?

Yes, the HMC336MS8GETR is characterized and functional in both 50-Ω and 75-Ω systems per its General Description. While S-parameters are specified in 50 Ω, its non-reflective architecture and broadband matching allow direct use in CATV, broadcast, and video distribution systems with appropriate impedance-matching layout practices around the MSOP8G package.

What is the ESD sensitivity rating of HMC336MS8GETR?

The HMC336MS8GETR is rated Class 1A per HBM (Human Body Model), indicating high electrostatic sensitivity. Handling requires strict ESD precautions: grounded workstations, ionized air, and wrist straps. The device marking "E" in HMC336MS8GETR denotes RoHS compliance and aligns with the same ESD classification as the HMC336MS8G variant.

HMC336MS8GETR Specifications

Product attributes
Attribute value
Manufacturer:
Analog Devices Inc.
Series:
-
Package/Case:
8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
RF Type:
General Purpose
Topology:
Absorptive
Circuit:
SPDT
Frequency Range:
0Hz ~ 6GHz
Isolation:
42dB
Insertion Loss:
1.6dB
Test Frequency:
6GHz
P1dB:
25dBm
IIP3:
42dBm
Features:
-
Impedance:
50Ohm, 75Ohm
Voltage - Supply:
5V
Operating Temperature:
-40°C ~ 85°C
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-MSOPG

HMC336MS8GETR FAQ

1.How can I place an order for HMC336MS8GETR through Aetrix?

Please submit a Request for Quotation (RFQ) for HMC336MS8GETR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for HMC336MS8GETR reliable?

The price and inventory of HMC336MS8GETR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HMC336MS8GETR is usually 5 days.

3.What payment methods are accepted for HMC336MS8GETR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HMC336MS8GETR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for HMC336MS8GETR?

HMC336MS8GETR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your HMC336MS8GETR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for HMC336MS8GETR?

For technical support, including HMC336MS8GETR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HMC336MS8GETR requirements.

6.How does Aetrix verify that HMC336MS8GETR is sourced from the original manufacturer or authorized distributors?

All HMC336MS8GETR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HMC336MS8GETR meets industry standards.

7.What is the process for return or replacement of HMC336MS8GETR?

All HMC336MS8GETR units undergo pre-shipment inspection (PSI). If there is an issue with HMC336MS8GETR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The HMC336MS8GETR part is unused and in its original packaging.

Return procedure for HMC336MS8GETR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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