Analog Devices Inc. HMC336MS8GTR

Overview

HMC336MS8GTR from Analog Devices (formerly Hittite Microwave) is a GaAs MMIC SPDT non-reflective switch with positive control logic, operating from DC to 6 GHz in an MSOP8G package. It delivers 1.6 dB insertion loss and 42 dB isolation at 6 GHz, requires +5 V bias and 0/+5 V control, and supports both 50-Ω and 75-Ω RF systems for broadband signal routing.

For engineers reviewing the HMC336MS8GTR datasheet, HMC336MS8GTR pinout, HMC336MS8GTR application, or HMC336MS8GTR equivalent, key selection criteria include its non-reflective architecture, DC-coupled RF ports requiring external blocking capacitors, temperature-stable RF performance from –40°C to +85°C, and compatibility with high-speed switching in fiber-optic and wireless infrastructure.

Technical Context

The HMC336MS8GTR implements a GaAs MESFET-based SPDT topology with integrated bias network and non-reflective termination on all RF paths. Its positive-control interface uses two independent TTL/CMOS-compatible inputs (CTLA, CTLB) to select RFC→RF1 or RFC→RF2 paths without external level-shifting.

DC blocking capacitors are mandatory at RFC, RF1, and RF2 ports - their values directly set the low-frequency cutoff. The exposed ground paddle and pins 6/7 must be soldered to PCB RF ground to maintain specified isolation and return loss across 0.5–6 GHz.

Key Specifications

Pinout & Package

Package: MSOP8G (8-lead mini small-outline package with exposed ground paddle); body material is low-stress injection-molded plastic; RoHS-compliant version marked H336 with matte Sn finish and MSL1 rating.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SPDT switch applications.

Compared with HMC336MS8GTR, HMC347LP3E extends frequency range at the cost of control compatibility and loss, while QM11036 trades package size and thermal design for higher power handling - neither is pin-compatible, and both require layout revision.

Availability

HMC336MS8GTR is available at Aetrix Electronics and suitable for broadband test equipment, fiber-optic transceiver modules, and wireless infrastructure requiring stable component supply and long-term obsolescence management.

Supply support for HMC336MS8GTR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Analog Devices acquired Hittite Microwave in 2014 and maintains its high-frequency RF portfolio, specializing in GaAs, GaN, and SiGe MMIC solutions for defense, communications, and instrumentation.

The HMC336MS8GTR belongs to Hittite's legacy SPDT switch family designed for DC–6 GHz non-reflective signal routing in compact, low-power RF subsystems where control simplicity and broadband fidelity are critical.

FAQ

What is the minimum operating frequency of the HMC336MS8GTR?

The HMC336MS8GTR operates from DC, but the practical lower limit depends on external DC-blocking capacitors at RFC, RF1, and RF2. With standard 100 pF capacitors, the –3 dB point is ~16 MHz; larger values (e.g., 1 nF) extend usability down to kHz ranges. The device itself imposes no intrinsic low-frequency cutoff.

Does the HMC336MS8GTR require external bias circuitry?

No - the HMC336MS8GTR integrates all necessary bias networks internally. Only a +5 V supply to pin 4 (V_DD) and 0/+5 V logic signals to pins 1 and 2 (CTLA/CTLB) are needed. External DC-blocking capacitors are mandatory at RF ports, but no resistors, inductors, or additional bias tees are required for basic operation.

Can the HMC336MS8GTR be used in 75-Ohm video or CATV systems?

Yes - the HMC336MS8GTR is explicitly characterized for both 50-Ω and 75-Ω systems. Its non-reflective architecture maintains good return loss in either impedance environment, and the 1.6 dB insertion loss at 6 GHz holds across both standards, making it suitable for broadband cable infrastructure and broadcast equipment.

What is the ESD sensitivity rating of the HMC336MS8GTR?

The HMC336MS8GTR is rated Class 1A per HBM (Human Body Model), meaning it withstands up to 250 V ESD stress. This mandates strict handling precautions: use grounded wrist straps, conductive foam storage, and ESD-safe workstations during assembly and testing to prevent latent damage to the GaAs MESFET structure.

How does temperature affect the HMC336MS8GTR's RF performance?

Over –40°C to +85°C, insertion loss increases by ≤0.3 dB and isolation decreases by ≤3 dB across 0.5–6 GHz. The HMC336MS8GTR maintains >40 dB isolation and <1.9 dB loss at 6 GHz even at +85°C, ensuring reliable operation in outdoor wireless units and industrial RF test gear without active thermal compensation.