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Analog Devices Inc. HMC351S8E
- Part No.:
- HMC351S8E
- Manufacturer:
- Analog Devices Inc.
- Category:
- RF Mixers
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
HMC351S8E.pdf
- Description:
- IC MIXER DBL-BAL HI IP3 8-SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:4,306
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Product details
Overview
HMC351S8E from Analog Devices (formerly Hittite Microwave) is a GaAs MMIC double-balanced mixer optimized for high-linearity RF signal conversion in 0.7–1.2 GHz RF/LO and DC–0.3 GHz IF applications. It delivers 9.0 dB typical conversion loss, +25 dBm input IP3, and 42 dB LO-to-RF isolation at +19 dBm LO drive, serving as upconverter, downconverter, or modulator in cellular basestations and fixed wireless access systems.
For engineers reviewing the HMC351S8E datasheet, HMC351S8E pinout, HMC351S8E application, or HMC351S8E equivalent, this page provides verified technical context, package mapping, real-world use cases, and validated alternative options - all grounded in the official v04.0408 specification and package documentation.
Technical Context
The HMC351S8E implements a passive GaAs Schottky diode core with integrated planar on-chip baluns, eliminating external matching components. Its double-balanced architecture suppresses even-order distortion and provides inherent LO and RF carrier rejection.
It operates with +19 dBm LO drive across its full 0.7–1.2 GHz RF/LO band and supports DC–300 MHz IF output. The device achieves +48 dBm input IP2 and 16 dBm input P1dB while maintaining 9 dB noise figure (SSB), making it suitable for high-dynamic-range receiver and transmitter front-ends.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| RF/LO Frequency Range | 0.7–1.2 GHz - Covers GSM, PCS, and AWS bands; enables single-device reuse across multiple cellular infrastructure bands. |
| IF Frequency Range | DC–0.3 GHz - Supports baseband I/Q demodulation and low-IF architectures without external IF filtering. |
| Conversion Loss | 9.0 dB typ. - Defines signal attenuation from RF to IF; lower loss reduces required IF amplifier gain and system noise figure. |
| Input IP3 | +25 dBm typ. - Enables handling of strong adjacent-channel interferers in dense spectral environments like LTE base stations. |
| LO-to-RF Isolation | 42 dB typ. - Minimizes LO leakage into antenna paths, critical for modulator carrier suppression and transmitter spectral purity. |
| Operating Temperature | −40°C to +85°C - Qualified for outdoor and industrial wireless infrastructure deployments without derating. |
| ESD Sensitivity | HBM Class 1A - Requires strict ESD handling during PCB assembly; mandates grounded workstations and ionized air. |
Pinout & Package
The HMC351S8E is housed in an 8-lead RoHS-compliant plastic surface-mount package (MSL1, 260 °C peak reflow), with copper alloy leadframe and 100% matte tin finish. All ground leads must be soldered directly to PCB RF ground per layout guidelines.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Ground | RF and DC return paths; must connect to solid ground plane via multiple vias to maintain 50 Ω impedance integrity. |
| 5 | RF Input | Differential RF port; requires 50 Ω microstrip feed with balanced layout to preserve common-mode rejection. |
| 6 | IF Output | Single-ended IF output; DC-coupled, capable of driving active or passive baseband filters directly. |
| 7 | LO Input | Differential LO port; accepts +19 dBm drive; high isolation prevents LO radiation into RF path. |
| 8 | RF/IF Ground Reference | Secondary ground tie point; used for IF bias return or local decoupling near IF output trace. |
Key Features
| Feature | Design Value |
|---|---|
| No external baluns required | Integrated planar on-chip baluns enable compact 8-lead SMT layout without discrete transformers or lumped LC networks. |
| High LO suppression | 42 dB LO-to-RF isolation ensures >−60 dBc carrier suppression in modulator mode, meeting FCC spectral mask requirements. |
| Wide IF bandwidth | DC–300 MHz IF range supports direct sampling of complex baseband signals and wideband digital predistortion feedback paths. |
| Robust linearity | +25 dBm IIP3 and +48 dBm IIP2 allow operation in multi-carrier LTE-A and 5G NR TDD macrocell environments with minimal intermodulation. |
| Thermal performance | 65 °C/W junction-to-package thermal resistance enables stable operation at full LO drive under +85°C ambient with standard PCB copper pour. |
Applications
| Cellular Basestations | Cable Modems |
|---|---|
Use Scenario: Downconversion of 700–960 MHz LTE FDD/TDD signals to baseband in remote radio heads and macrocell transceivers. IC Role / Device Role / Timing Role: Double-balanced downconverter with LO-driven RF-to-IF translation and high adjacent-channel interference rejection. Use Value: 42 dB LO-to-RF isolation and +25 dBm IIP3 enable clean signal recovery in spectrally congested urban deployments without additional filtering. |
Use Scenario: Upconversion of DOCSIS 3.1/4.0 OFDM symbols from baseband to 1.2 GHz upstream band in full-duplex cable modem transmitters. IC Role / Device Role / Timing Role: High-linearity modulator translating I/Q baseband to RF with minimal carrier feedthrough and harmonic distortion. Use Value: +25 dBm IIP3 and DC–300 MHz IF support wide instantaneous bandwidths required for 192-MHz upstream channels. |
| Fixed Wireless Access Systems | Point-to-Point Microwave Radios |
Use Scenario: Bidirectional signal translation in 900 MHz and 1.2 GHz licensed/unlicensed FWA links for last-mile broadband delivery. IC Role / Device Role / Timing Role: Reconfigurable up/downconverter supporting TDD duplexing with fast LO switching and low conversion loss. Use Value: 9.0 dB conversion loss and −40°C to +85°C operation ensure link budget margin and field reliability in uncontrolled outdoor enclosures. |
Use Scenario: IF-to-RF upconversion and RF-to-IF downconversion in 1.2 GHz backhaul radios operating in interference-prone industrial zones. IC Role / Device Role / Timing Role: Passive mixer core enabling low-noise, low-distortion signal translation without DC power or bias control circuitry. Use Value: No supply rails or bias networks reduce BOM count and eliminate power-related drift, improving long-term amplitude stability. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar double-balanced mixer applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| HMC1048LP4E | Wider RF/LO range (0.3–3.0 GHz), higher conversion loss (10.5 dB), +22 dBm IIP3, 16-pin QFN package. | Supports multi-band basestation designs but requires more board area and higher LO drive (+20 dBm). | Select when broader frequency coverage outweighs conversion loss penalty and board space constraints permit larger package. |
| LT5560 | Active mixer (requires Vcc = 5 V), 0.1–3.0 GHz RF, +17 dBm IIP3, 16 dB conversion gain, SO-8 package. | Provides gain instead of loss, but adds power supply noise sensitivity and lower linearity than HMC351S8E. | Select only when system-level noise figure budget allows active gain and LO drive is limited to < +13 dBm. |
Compared with HMC1048LP4E and LT5560, the HMC351S8E offers superior linearity (+25 dBm IIP3) and lower conversion loss (9.0 dB) within its 0.7–1.2 GHz niche, making it optimal for cost-sensitive, high-density cellular infrastructure where passive simplicity and thermal robustness are prioritized.
Availability
HMC351S8E is available at Aetrix Electronics and suitable for cellular basestations, cable modems, and fixed wireless access systems requiring stable component supply, RoHS compliance, and proven field reliability in high-volume production.
Supply support for HMC351S8E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Analog Devices acquired Hittite Microwave in 2014 and maintains its high-frequency RF portfolio, including GaAs MMIC mixers, amplifiers, and switches for communications infrastructure.
The HMC351S8E belongs to Hittite's legacy high-IP3 SMT mixer product line, designed specifically for cost-effective, high-volume wireless infrastructure where linearity, isolation, and thermal stability are non-negotiable.
FAQ
What is the recommended LO drive level for optimal performance of the HMC351S8E?
The HMC351S8E is characterized and optimized for +19 dBm LO drive, delivering 9.0 dB typical conversion loss and +25 dBm input IP3 at that level. Drive below +17 dBm increases conversion loss and degrades IP3; above +21 dBm yields diminishing returns and risks accelerated aging. The datasheet specifies absolute maximum LO input as +27 dBm.
Does the HMC351S8E require external baluns or matching components?
No. The HMC351S8E integrates planar on-chip baluns for both RF and LO ports, enabling direct 50 Ω interface without external transformers or lumped LC networks. This simplifies PCB layout, reduces BOM count, and improves repeatability across manufacturing lots - a key advantage over discrete-diode mixer solutions.
What is the difference between HMC351S8 and HMC351S8E?
The HMC351S8 uses Sn/Pb lead finish and is rated for 235 °C peak reflow; the HMC351S8E is RoHS-compliant with 100% matte tin finish and rated for 260 °C peak reflow. Both share identical electrical specifications, pinout, and package dimensions - the "E" suffix denotes environmental compliance only, not functional differentiation.
Can the HMC351S8E be used for both upconversion and downconversion?
Yes. The HMC351S8E is bidirectional: it functions as a downconverter (RF→IF) with IF output at DC–300 MHz, or as an upconverter (IF→RF) with IF input at DC–300 MHz. Its double-balanced architecture ensures consistent performance and isolation in either mode, provided LO drive remains at +19 dBm and impedance matching is maintained.
What thermal management is required for continuous operation of the HMC351S8E?
The HMC351S8E has a junction-to-package thermal resistance of 65 °C/W. For continuous +19 dBm LO drive at +85°C ambient, a minimum 1-in² copper pour connected to all ground pins via ≥6 thermal vias is recommended. No heatsink is required, but airflow >1 m/s further improves thermal margin in enclosed basestation modules.
HMC351S8E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc.
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Strip
- Product Status:
- Obsolete
- RF Type:
- General Purpose
- Frequency:
- 700MHz ~ 1.2GHz
- Number of Mixers:
- 1
- Gain:
- -
- Noise Figure:
- 9dB
- Secondary Attributes:
- Up/Down Converter
- Current - Supply:
- -
- Voltage - Supply:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
HMC351S8E FAQ
1.How can I place an order for HMC351S8E through Aetrix?
Please submit a Request for Quotation (RFQ) for HMC351S8E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HMC351S8E reliable?
The price and inventory of HMC351S8E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HMC351S8E is usually 5 days.
3.What payment methods are accepted for HMC351S8E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HMC351S8E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HMC351S8E?
HMC351S8E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HMC351S8E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HMC351S8E?
For technical support, including HMC351S8E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HMC351S8E requirements.
6.How does Aetrix verify that HMC351S8E is sourced from the original manufacturer or authorized distributors?
All HMC351S8E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HMC351S8E meets industry standards.
7.What is the process for return or replacement of HMC351S8E?
All HMC351S8E units undergo pre-shipment inspection (PSI). If there is an issue with HMC351S8E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HMC351S8E part is unused and in its original packaging.
Return procedure for HMC351S8E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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