Analog Devices Inc. HMC410MS8GETR

Overview

HMC410MS8GETR from Hittite Microwave Corporation is a GaAs MMIC double-balanced mixer operating from 9 to 15 GHz, delivering 8 dB typical conversion loss, +24 dBm input IP3, and 40 dB LO/RF isolation. It requires no external bias or components and is used in microwave radio transceivers where high linearity and broadband RF-LO matching are critical.

For engineers reviewing the HMC410MS8GETR datasheet, HMC410MS8GETR pinout, HMC410MS8GETR application, or HMC410MS8GETR equivalent, key selection criteria include its 9–15 GHz RF/LO bandwidth, DC–2.5 GHz IF range, MSOP8G package compatibility, and LO drive requirement of +13 to +19 dBm for optimal IP3 and noise figure performance.

Technical Context

The HMC410MS8GETR implements a passive double-balanced diode ring topology using GaAs Schottky barrier junctions, enabling high suppression of LO feedthrough and even-order spurs. Its RF and LO ports are AC-coupled and 50 Ω matched across 9–15 GHz, while the IF port is DC-coupled with ±4 mA absolute maximum current rating.

It operates as a fundamental downconverter (or upconverter) without local oscillator harmonics injection, supporting SSB noise figure of 8–11 dB and exhibiting stable conversion gain vs. temperature from –40°C to +85°C. Spurious outputs at the IF port are suppressed ≥40 dBc for dominant mRF±nLO terms under standard test conditions.

Key Specifications

Pinout & Package

Package: MSOP8G - RoHS-compliant, low-stress molded plastic with exposed ground paddle; MSL1, 260 °C peak reflow.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-IP3 double-balanced mixer applications.

Compared with HMC1048LP4E and QPC1006, the HMC410MS8GETR offers the lowest LO drive requirement (+13 dBm min), zero-bias operation, and best-in-class IP3 within its native band-making it optimal for space-constrained, low-power microwave receivers where thermal management and layout simplicity are critical.

Availability

HMC410MS8GETR is available at Aetrix Electronics and suitable for long-haul radio platforms, microwave radio transceivers, and VSAT terminal designs requiring stable component supply despite its obsolete status through controlled legacy sourcing.

Supply support for HMC410MS8GETR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Hittite Microwave Corporation was a U.S.-based designer of high-frequency analog ICs and modules, acquired by Analog Devices in 2014; known for GaAs MMICs targeting microwave and millimeter-wave infrastructure.

The HMC410MS8GETR belongs to Hittite's high-IP3 passive mixer product line, engineered specifically for carrier-grade wireless backhaul and satellite communication systems demanding linearity, repeatability, and SMT manufacturability.

FAQ

What is the recommended LO drive level for optimal performance of the HMC410MS8GETR?

The HMC410MS8GETR achieves best conversion loss (8 dB) and IP3 (+24 dBm) at +17 dBm LO drive. Operation remains valid between +13 dBm and +19 dBm; below +13 dBm increases conversion loss and degrades IP3, while above +19 dBm risks parametric shift and accelerated aging. The HMC410MS8GETR does not require DC bias, simplifying LO driver stage design.

Can the HMC410MS8GETR be used in an upconverter configuration?

Yes, the HMC410MS8GETR functions bidirectionally as both downconverter and upconverter. When used as an upconverter, the IF port becomes the input and the RF port the output; LO/IF isolation (37 dB typ) and RF/IF isolation (8–17 dB) define spurious suppression. All published specs-including conversion loss and IP3-are measured in downconverter mode unless otherwise noted, so upconverter validation requires system-level testing.

Is the HMC410MS8GETR still in production, and how does Aetrix support its supply?

No, the HMC410MS8GETR is marked OBSOLETE by its original manufacturer. Aetrix Electronics maintains verified legacy inventory with full traceability and provides extended lifecycle coordination-including last-time buy planning, cross-reference guidance, and obsolescence mitigation reporting-to ensure continuity for deployed systems relying on the HMC410MS8GETR.

What is the maximum RF input power the HMC410MS8GETR can handle without damage?

The absolute maximum RF input power for the HMC410MS8GETR is +20 dBm, as defined in its Absolute Maximum Ratings table. Exceeding this level-even briefly-may cause irreversible Schottky junction degradation. For reliable operation, RF input should be limited to ≤+14 dBm (P1dB point) to avoid compression and distortion; the HMC410MS8GETR exhibits 11 dBm typical input P1dB at +17 dBm LO drive.

How should the exposed ground paddle on the HMC410MS8GETR MSOP8G package be handled in PCB layout?

The exposed ground paddle of the HMC410MS8GETR must be soldered directly to a solid, low-inductance RF ground plane using ≥4 thermal vias (0.3 mm diameter, spaced ≤1 mm apart). Per datasheet Note 5, all ground leads (pins 1 and 8) and the paddle must connect to the same ground net. Failure to do so degrades LO/RF isolation and increases conversion loss beyond spec.