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Analog Devices Inc. HMC422MS8

Part No.:
HMC422MS8
Manufacturer:
Analog Devices Inc.
Category:
RF Mixers
Package:
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Datasheet:
AetrixHMC422MS8.pdf
Description:
IC MIXER DBL-BAL LO AMP 8-MSOP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,605

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Product details

Overview

HMC422MS8 from Analog Devices (formerly Hittite Microwave) is a GaAs MMIC double-balanced mixer IC with integrated LO amplifier, operating from 1.2 to 2.6 GHz RF/LO and DC–1 GHz IF. It delivers 8 dB typical conversion loss, +15 dBm input IP3, +8 dBm input P1dB, and requires only 0 dBm LO drive at +3 V, 30 mA supply. It serves as upconverter or downconverter in wireless infrastructure transceivers.

For engineers reviewing the HMC422MS8 datasheet, HMC422MS8 pinout, HMC422MS8 application, or HMC422MS8 equivalent, key selection criteria include its integrated LO amplifier enabling low-drive operation, 8 dB conversion loss at 2 GHz, 30 mA supply current, DC-coupled RF/IF ports, and MSOP-8 package compatibility with RF layout best practices.

Technical Context

The HMC422MS8 implements a double-balanced Gilbert-cell mixer topology with monolithically integrated GaAs LO amplifier, enabling single-supply operation and eliminating external LO buffer stages. Its RF and IF ports are DC-coupled, while the LO port is AC-coupled and 50 Ω matched.

It supports both upconversion and downconversion modes with fixed IF bandwidth (DC–1 GHz), specified isolation performance (LO–RF ≥23 dB, LO–IF ≥9 dB), and temperature-stable linearity (IP3 variation <3 dB across –40°C to +85°C).

Key Specifications

Parameter Value and Actual Design Meaning
Frequency Range (RF/LO) 1.2–2.6 GHz - Enables full-band coverage for MMDS, WLL, and 2.4 GHz ISM systems without band switching.
Conversion Loss 8 dB typ. - Defines signal attenuation between RF and IF paths; impacts receiver noise figure and transmitter output power efficiency.
Input IP3 +15 dBm typ. at 2 GHz - Determines third-order intermodulation distortion floor; critical for multi-carrier cellular base station linearity.
LO Drive Level 0 dBm - Eliminates need for external LO amplification, reducing BOM count and board space in compact transceivers.
Supply +3 V, 30 mA - Enables direct integration into 3.3 V system rails with minimal thermal dissipation (<100 mW).
IF Bandwidth DC–1 GHz - Supports baseband I/Q, wideband IF sampling, and zero-IF architectures without external AC coupling.
Operating Temp –40°C to +85°C - Qualified for outdoor wireless infrastructure and industrial-grade embedded radio modules.

Pinout & Package

Package: 8-lead MSOP (Mini Small Outline Package), RoHS-compliant variant HMC422MS8E uses matte tin plating; standard HMC422MS8 uses Sn/Pb solder finish. MSL1 rating; body material is low-stress injection-molded plastic with silica/silicon impregnation.

Pin/Terminal Circuit Role Design Meaning
1 LO AC-coupled 50 Ω input for local oscillator signal; requires external series capacitor per layout guidelines.
2, 3, 6, 7 GND RF ground terminals - must be soldered directly to PCB ground plane with multiple vias to minimize inductance.
4 Vdd +3 V supply for integrated LO amplifier; requires 10,000 pF RF bypass capacitor to suppress supply noise.
5 IF DC-coupled IF output/input - supports DC-to-1 GHz operation; limited to ±10 mA DC current to prevent die damage.
8 RF DC-coupled 50 Ω RF port - enables direct connection to antenna switch or PA/LNA without blocking capacitors.

Key Features

Feature Design Value
Integrated LO amplifier Reduces external component count by eliminating discrete LO buffer; lowers system power consumption and layout complexity.
DC-coupled RF and IF ports Enables zero-IF and complex I/Q modulation schemes without external DC-blocking capacitors or bias tees.
Low LO drive requirement (0 dBm) Permits direct drive from low-power synthesizers or fractional-N PLLs, improving frequency agility and phase noise margin.
High LO–RF isolation (≥23 dB) Minimizes LO leakage into antenna path - critical for FDD systems and regulatory spurious emission compliance.
Single +3 V supply operation Simplifies power architecture in multi-channel radios; eliminates need for negative or high-voltage supplies.

Applications

MMDS Base Stations Wireless Local Loop (WLL)

Use Scenario: Outdoor point-to-multipoint base station operating in 2.5–2.686 GHz licensed band, supporting 64-QAM modulation and 20 MHz channel bandwidth.

IC Role / Device Role / Timing Role: Downconverter for receive path and upconverter for transmit path, translating between RF and 70–140 MHz IF.

Use Value: 8 dB conversion loss preserves receiver sensitivity; +15 dBm IP3 maintains ACLR >45 dB under multi-carrier loading.

Use Scenario: Fixed wireless access node deployed in rural broadband networks, using 1.2–1.7 GHz unlicensed spectrum with OFDM PHY.

IC Role / Device Role / Timing Role: Core RF front-end mixer in dual-conversion transceiver, interfacing with 100 MHz IF SAW filter and 3.3 V PLL synthesizer.

Use Value: 0 dBm LO drive simplifies synthesizer design; DC-coupled IF supports baseband I/Q sampling without DC offset calibration overhead.

2.4 GHz ISM Transceivers Cellular Infrastructure Remote Radio Heads

Use Scenario: Industrial IoT gateway supporting IEEE 802.11b/g/n in 2.4–2.4835 GHz band, requiring robust coexistence with Bluetooth and Zigbee.

IC Role / Device Role / Timing Role: Image-reject mixer in direct-conversion receiver, paired with quadrature LO generation.

Use Value: LO–IF isolation ≥9 dB prevents LO feedthrough from degrading EVM; 30 mA supply enables battery-backed operation with LDO regulation.

Use Scenario: Compact RRH unit for LTE 1800 MHz band, mounted on cell tower with tight thermal constraints and strict EMI limits.

IC Role / Device Role / Timing Role: First-stage downconverter in macrocell receiver chain, preceding variable-gain amplifier and ADC.

Use Value: –40°C to +85°C rating ensures reliability in uncontrolled outdoor enclosures; 50 Ω RF/LO matching reduces impedance tuning effort.

Equivalent & Alternatives

The following parts are listed as comparable options for similar double-balanced mixer applications.

Alternative Part Technical Difference Application Difference Selection Advice
HMC1040LP4E Wider RF range (0.5–6 GHz), higher conversion loss (9.5 dB), no integrated LO amp, requires +7 dBm LO drive. Better suited for multi-band test equipment; lacks LO integration, increasing external component count. Select when broader frequency coverage outweighs LO drive simplicity and power savings of HMC422MS8.
ADL5801ACPZ-R7 DC–6 GHz RF, +12 dBm IP3, +5.5 dBm P1dB, 5.5 dB conversion loss, requires +13 dBm LO drive, 5 V supply. Higher dynamic range but demands high-power LO source and separate voltage regulation; larger LFCSP package. Prefer for high-linearity lab instruments where LO power is available; avoid in space- or power-constrained wireless infrastructure.

Compared with HMC1040LP4E and ADL5801ACPZ-R7, the HMC422MS8 uniquely combines integrated LO amplification, low 0 dBm drive, and MSOP-8 footprint-making it optimal for cost-sensitive, compact, single-supply wireless transceivers operating strictly within 1.2–2.6 GHz.

Availability

HMC422MS8 is available at Aetrix Electronics and suitable for MMDS base stations, wireless local loop nodes, and 2.4 GHz ISM transceivers requiring stable component supply, long-lifecycle support, and traceable sourcing for production ramp.

Supply support for HMC422MS8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Analog Devices acquired Hittite Microwave in 2014 and continues to support its high-frequency RF portfolio, including GaAs MMIC mixers, amplifiers, and switches for communications and defense markets.

The HMC422MS8 belongs to Hittite's legacy GaAs double-balanced mixer product line, engineered specifically for low-LO-drive, compact wireless infrastructure transceivers operating in sub-3 GHz licensed and ISM bands.

FAQ

What is the absolute maximum RF input power rating for the HMC422MS8?

The HMC422MS8 has an absolute maximum RF input power rating of +13 dBm at Vdd = +3 V. Exceeding this level risks permanent damage to the GaAs die. For reliable operation, the recommended maximum continuous RF input is +8 dBm (P1dB), with peak transient excursions limited to +10 dBm under controlled duty cycle conditions. Always verify input power levels with directional couplers in production test setups for the HMC422MS8.

Does the HMC422MS8 require external DC blocking capacitors on its RF and IF ports?

No - the RF and IF ports of the HMC422MS8 are DC-coupled, so external DC blocking capacitors are not required unless the connected circuitry imposes DC bias conflicts. The LO port, however, is AC-coupled and requires an external series capacitor. For IF operation extending to DC, ensure the connected load does not source or sink more than ±10 mA to avoid die failure in the HMC422MS8.

Can the HMC422MS8 operate as both an upconverter and downconverter?

Yes - the HMC422MS8 is fully bidirectional and functions identically as either an upconverter (IF → RF) or downconverter (RF → IF) across its 1.2–2.6 GHz RF/LO range. Performance metrics such as conversion loss, IP3, and isolation are specified under downconverter conditions (IF = 100 MHz), but measured data confirms symmetrical behavior in upconversion mode for the HMC422MS8.

What is the thermal derating specification for continuous power dissipation in the HMC422MS8?

The HMC422MS8 has a maximum continuous power dissipation of 0.38 W at 85°C ambient. Above 85°C, power must be derated linearly at 5.8 mW/°C - meaning at 105°C case temperature, max allowable dissipation drops to 0.264 W. Thermal design must include adequate copper area and via stitching beneath the exposed paddle to maintain junction temperature below 150°C for the HMC422MS8.

Is the HMC422MS8 pin-compatible with the HMC422MS8E variant?

Yes - the HMC422MS8 and HMC422MS8E share identical pinout, footprint, and electrical specifications. The only differences are RoHS compliance (matte tin vs. Sn/Pb plating) and MSL reflow profile (260°C peak for HMC422MS8E vs. 235°C for HMC422MS8). Both variants mount identically and may be substituted in existing designs without layout changes for the HMC422MS8.

HMC422MS8 Specifications

Product attributes
Attribute value
Manufacturer:
Analog Devices Inc.
Series:
-
Package/Case:
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging:
Bulk
Product Status:
Obsolete
RF Type:
General Purpose
Frequency:
1.2GHz ~ 2.6GHz
Number of Mixers:
1
Gain:
-
Noise Figure:
8dB
Secondary Attributes:
Up/Down Converter
Current - Supply:
30mA
Voltage - Supply:
3V
Mounting Type:
Surface Mount
Supplier Device Package:
8-MSOP

HMC422MS8 FAQ

1.How can I place an order for HMC422MS8 through Aetrix?

Please submit a Request for Quotation (RFQ) for HMC422MS8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for HMC422MS8 reliable?

The price and inventory of HMC422MS8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HMC422MS8 is usually 5 days.

3.What payment methods are accepted for HMC422MS8?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HMC422MS8 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for HMC422MS8?

HMC422MS8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your HMC422MS8 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for HMC422MS8?

For technical support, including HMC422MS8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HMC422MS8 requirements.

6.How does Aetrix verify that HMC422MS8 is sourced from the original manufacturer or authorized distributors?

All HMC422MS8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HMC422MS8 meets industry standards.

7.What is the process for return or replacement of HMC422MS8?

All HMC422MS8 units undergo pre-shipment inspection (PSI). If there is an issue with HMC422MS8, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The HMC422MS8 part is unused and in its original packaging.

Return procedure for HMC422MS8:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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