Analog Devices Inc. HMC422MS8ETR
- Part No.:
- HMC422MS8ETR
- Manufacturer:
- Analog Devices Inc.
- Category:
- RF Mixers
- Package:
- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
- Datasheet:
-
HMC422MS8ETR.pdf
- Description:
- IC MIXER DBL-BAL LO AMP 8-MSOP
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
HMC422MS8ETR from Analog Devices (formerly Hittite Microwave) is a GaAs MMIC double-balanced mixer IC with integrated LO amplifier, operating from 1.2 to 2.6 GHz as upconverter or downconverter. It delivers 8 dB typical conversion loss, +15 dBm input IP3 at 2 GHz, and requires only 0 dBm LO drive with 3 V/30 mA single-supply operation - ideal for wireless infrastructure RF front-ends.
For engineers reviewing the HMC422MS8ETR datasheet, HMC422MS8ETR pinout, HMC422MS8ETR application, or HMC422MS8ETR equivalent, key selection criteria include its integrated LO amplifier enabling low-drive operation, DC-coupled RF/IF ports, 50 Ω matched interfaces, and MSL1 RoHS-compliant 8-lead MSOP package with exposed paddle.
Technical Context
The HMC422MS8ETR implements a double-balanced Gilbert-cell mixer core with monolithically integrated GaAs LO amplifier, enabling full RF/LO/IF port balancing without external baluns. Its DC-coupled RF and IF ports support baseband-to-IF operation while maintaining >23 dB LO–RF isolation and >9 dB RF–IF isolation across band.
Designed for fixed-frequency or tunable transceivers, it operates with 0 dBm LO drive and exhibits stable conversion loss (8–10.5 dB), noise figure (8–10.5 dB), and input P1dB (+5 to +8 dBm) over –40°C to +85°C. The integrated LO amplifier dissipates <100 mW and enables single-rail biasing via Pin 4 (Vdd).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range (RF/LO) | 1.2–2.6 GHz - supports MMDS, ISM, and cellular infrastructure bands without external tuning |
| Conversion Loss | 8 dB typ. - defines signal attenuation in downconversion path; impacts receiver sensitivity and cascade NF |
| Input IP3 | +15 dBm typ. at 2 GHz - determines linearity headroom for two-tone interference rejection in dense RF environments |
| LO Drive Level | 0 dBm - eliminates need for external LO buffer amplifiers, reducing BOM count and board area |
| Supply Voltage / Current | +3 V / 30 mA - enables direct integration into 3 V systems with minimal thermal load and bypassing (10,000 pF required) |
| LO–RF Isolation | 23–30 dB - suppresses LO leakage into antenna path, easing filter requirements in transmit chains |
| Operating Temperature | –40°C to +85°C - qualified for outdoor wireless LAN and base station equipment deployment |
Pinout & Package
Package: RoHS-compliant 8-lead MSOP (MS8E) with exposed thermal paddle; MSL1 rated (260°C peak reflow); body material is low-stress injection-molded plastic with 100% matte tin lead finish.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | LO | AC-coupled 50 Ω input for local oscillator signal; internal matching eliminates external series capacitor |
| 2, 3, 6, 7 | GND | RF ground terminals - must be soldered directly to PCB ground plane with multiple vias for optimal isolation |
| 4 | Vdd | Single positive supply for integrated LO amplifier; requires 10,000 pF RF bypass capacitor to ground |
| 5 | IF | DC-coupled output; supports DC–1 GHz IF bandwidth; max ±10 mA DC current to prevent die damage |
| 8 | RF | DC-coupled 50 Ω RF port; accepts +13 dBm max input; enables direct connection to PA/LNA without AC coupling |
Key Features
| Feature | Design Value |
|---|---|
| Integrated LO amplifier | Reduces external component count by eliminating discrete LO buffer; enables 0 dBm drive compatibility with low-power synthesizers |
| DC-coupled RF and IF ports | Supports zero-IF and low-IF architectures without blocking capacitors; simplifies layout and extends low-frequency response |
| Double-balanced topology | Provides inherent suppression of LO×LO, RF×RF, and even-order spurs; improves dynamic range in crowded spectral environments |
| 50 Ω matched interfaces | Enables direct connection to standard RF test equipment and PCB traces without impedance-matching networks |
| Exposed thermal paddle | Enhances thermal dissipation from GaAs die; requires soldering to PCB ground plane for reliable operation at full 37 mA Idd |
Applications
| MMDS Base Station Transmitter | ISM Band Wireless Link Receiver |
|---|---|
Use Scenario: Upconversion of IF signal to 2.5 GHz MMDS band for point-to-multipoint broadcast transmission. IC Role / Device Role / Timing Role: Double-balanced upconverter with integrated LO amplifier driving final PA stage. Use Value: 0 dBm LO drive requirement reduces synthesizer output power needs; +15 dBm IP3 ensures clean spectral emission under multi-carrier loading. |
Use Scenario: Downconversion of 2.4 GHz ISM-band received signal to 100 MHz IF for demodulation in industrial telemetry link. IC Role / Device Role / Timing Role: High-isolation downconverter enabling robust adjacent-channel rejection in noisy factory RF environments. Use Value: 23 dB LO–RF isolation minimizes self-interference; DC-coupled IF supports baseband sampling without external AC coupling. |
| Wireless LAN Access Point Front-End | Cellular Infrastructure Monitoring Receiver |
Use Scenario: Dual-conversion receive path in 802.11a/n AP, first mixer translating 5.2–5.8 GHz to 1.2 GHz IF. IC Role / Device Role / Timing Role: Wideband double-balanced mixer providing flat conversion loss across U-NII bands. Use Value: 8 dB typ. conversion loss preserves SNR; 1.2–2.6 GHz RF/LO range covers lower half of U-NII-1/2 with margin. |
Use Scenario: Spectrum monitoring receiver detecting out-of-band emissions from macrocell BTS in 1.9–2.2 GHz PCS band. IC Role / Device Role / Timing Role: High-linearity downconverter capturing wide instantaneous bandwidth for real-time FFT analysis. Use Value: +15 dBm IP3 allows detection of weak interferers amid strong in-band carriers; 85°C operating rating supports outdoor enclosure use. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar double-balanced mixer applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| HMC1048LP3E | Wider 0.3–4.0 GHz RF/LO range; higher 37 mA Idd; no integrated LO amp - requires +13 dBm LO drive | Better suited for multi-band test equipment; lacks LO integration, increasing system complexity | Select when wider frequency coverage outweighs LO drive simplicity and power savings of HMC422MS8ETR |
| ADL5802ACPZ-R7 | DC–6 GHz RF/LO; 6.5 dB conversion loss; +27 dBm IP3; requires +7 dBm LO; 5 V/120 mA supply | Higher performance at cost of higher LO drive, voltage, and power - targets high-end instrumentation | Choose for ultra-high linearity and broadband coverage where HMC422MS8ETR's 0 dBm LO drive and 3 V operation are not critical |
Compared with HMC1048LP3E and ADL5802ACPZ-R7, the HMC422MS8ETR offers the lowest LO drive requirement and smallest power footprint in its 1.2–2.6 GHz niche, trading bandwidth and ultimate linearity for integration simplicity and efficiency in wireless infrastructure designs.
Availability
HMC422MS8ETR is available at Aetrix Electronics and suitable for wireless local loop base stations, MMDS broadcast transmitters, and ISM-band telemetry receivers requiring stable component supply and long-lifecycle support.
Supply support for HMC422MS8ETR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Analog Devices acquired Hittite Microwave in 2014 and maintains its high-frequency RF portfolio, specializing in GaAs and SiGe MMIC solutions for communications and defense.
The HMC422MS8ETR belongs to Hittite's legacy GaAs mixer family designed specifically for cost-sensitive, high-volume wireless infrastructure where LO integration, low drive, and compact packaging are critical.
FAQ
What is the maximum RF input power rating for the HMC422MS8ETR?
The HMC422MS8ETR has an absolute maximum RF input rating of +13 dBm at Vdd = +3 V. Exceeding this level risks permanent damage to the GaAs mixer core. For reliable operation, design to keep peak RF input below +10 dBm to maintain linearity and avoid compression - the datasheet specifies +8 dBm input P1dB at 2 GHz, confirming usable linear range ends near that level. Always verify with actual IF output spectrum under worst-case modulation conditions when using HMC422MS8ETR in production systems.
Does the HMC422MS8ETR require external DC blocking on the RF or IF ports?
No - the HMC422MS8ETR features DC-coupled RF and IF ports. Pin 8 (RF) and Pin 5 (IF) are internally biased and can accept DC signals; however, Pin 5 (IF) must not source or sink more than ±10 mA DC current to prevent die failure. External DC blocking is only needed if the connected circuit imposes incompatible DC bias - for example, if the IF chain includes active components requiring different DC levels. The HMC422MS8ETR itself does not require series capacitors on RF or IF when interfacing with properly biased 50 Ω systems.
What is the recommended bypass capacitor for the Vdd pin of the HMC422MS8ETR?
The HMC422MS8ETR requires a 10,000 pF (10 nF) chip capacitor placed as close as possible between Pin 4 (Vdd) and ground (Pins 2/3/6/7). This value is specified in the datasheet to ensure stable LO amplifier operation and minimize supply-induced conversion gain ripple. Use a high-Q, low-ESR ceramic capacitor in 0603 or 0805 package; avoid tantalum or electrolytic types. Multiple parallel capacitors (e.g., 100 pF + 10 nF) may improve broadband decoupling, but the 10 nF is mandatory for HMC422MS8ETR functional integrity at 2.6 GHz.
Is the HMC422MS8ETR pin-compatible with the non-RoHS HMC422MS8?
Yes - the HMC422MS8ETR and HMC422MS8 share identical 8-lead MSOP footprints, pin functions, and electrical specifications. The "E" suffix denotes RoHS compliance (100% matte tin plating, 260°C MSL1 reflow rating), while the base HMC422MS8 uses Sn/Pb plating and 235°C reflow. Mechanical dimensions, thermal paddle layout, and all pin assignments (LO, GND, Vdd, IF, RF) match exactly. No PCB redesign is needed when migrating from HMC422MS8 to HMC422MS8ETR, though reflow profile must be updated per JEDEC J-STD-020.
Can the HMC422MS8ETR operate as both upconverter and downconverter?
Yes - the HMC422MS8ETR is a bidirectional double-balanced mixer and functions identically as an upconverter (IF → RF) or downconverter (RF → IF) across its full 1.2–2.6 GHz RF/LO range. Performance metrics - including conversion loss (8 dB typ.), IP3 (+15 dBm), and isolation - are specified for downconversion but apply equivalently to upconversion per the functional diagram and application notes. The device contains no internal directionality; RF and IF ports are symmetrically designed, with LO always applied to Pin 1 - making HMC422MS8ETR suitable for full-duplex transceiver architectures with shared LO distribution.
HMC422MS8ETR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc.
- Series:
- -
- Package/Case:
- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- RF Type:
- General Purpose
- Frequency:
- 1.2GHz ~ 2.6GHz
- Number of Mixers:
- 1
- Gain:
- -
- Noise Figure:
- 8dB
- Secondary Attributes:
- Up/Down Converter
- Current - Supply:
- 30mA
- Voltage - Supply:
- 3V
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-MSOP
HMC422MS8ETR FAQ
1.How can I place an order for HMC422MS8ETR through Aetrix?
Please submit a Request for Quotation (RFQ) for HMC422MS8ETR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HMC422MS8ETR reliable?
The price and inventory of HMC422MS8ETR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HMC422MS8ETR is usually 5 days.
3.What payment methods are accepted for HMC422MS8ETR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HMC422MS8ETR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HMC422MS8ETR?
HMC422MS8ETR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HMC422MS8ETR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HMC422MS8ETR?
For technical support, including HMC422MS8ETR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HMC422MS8ETR requirements.
6.How does Aetrix verify that HMC422MS8ETR is sourced from the original manufacturer or authorized distributors?
All HMC422MS8ETR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HMC422MS8ETR meets industry standards.
7.What is the process for return or replacement of HMC422MS8ETR?
All HMC422MS8ETR units undergo pre-shipment inspection (PSI). If there is an issue with HMC422MS8ETR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HMC422MS8ETR part is unused and in its original packaging.
Return procedure for HMC422MS8ETR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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