Analog Devices Inc. HMC536LP2

Overview

HMC536LP2 from Analog Devices (formerly Hittite Microwave) is a GaAs MMIC SPDT T/R switch operating from DC to 6 GHz, featuring 0.6 dB typical insertion loss at DC–3 GHz, +33 dBm input P0.1dB at +5 V control, and 27 dB isolation at DC–4 GHz. It serves as a high-linearity transmit/receive path selector in cellular infrastructure RF front-ends.

For engineers reviewing the HMC536LP2 datasheet, HMC536LP2 pinout, HMC536LP2 application, or HMC536LP2 equivalent, key selection criteria include its positive-control logic (0/+3V or 0/+5V), 2×2 mm DFN LP2 package with exposed ground paddle, +54 dBm input IP3 at 0.5–1.0 GHz, and suitability for space-constrained, high-frequency T/R switching in WiMAX and CMTS systems.

Technical Context

The HMC536LP2 integrates GaAs pHEMT transistor arrays with on-chip bias control circuitry enabling single-supply positive-voltage operation (0/+3V or 0/+5V), eliminating need for negative rails. Its SPDT T/R architecture routes RF between RFC (common port) and either RF1 or RF2 based on complementary A/B logic states.

DC-coupled 50 Ω ports require external blocking capacitors; the exposed ground paddle and pins 2/4/6 must be soldered directly to PCB RF ground for optimal isolation (>27 dB) and thermal performance (θ_JA = 75 °C/W). Switching speed is 33 ns (t_RISE/t_FALL) and 70 ns (t_ON/t_OFF) across full 0–6 GHz band.

Key Specifications

Pinout & Package

Package: 2×2 mm leadless DFN LP2 with exposed ground paddle (MSL1, Sn/Pb finish); requires full-solder connection of paddle and pins 2/4/6 to PCB RF ground plane.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar T/R switching applications.

Compared with HMC349ALP3E and QM11036, the HMC536LP2 uniquely balances DC–6 GHz coverage, +54 dBm IP3, and single-supply positive control in a 4 mm² footprint-making it optimal for cost-sensitive, space-constrained infrastructure T/R designs without negative bias capability.

Availability

HMC536LP2 is available at Aetrix Electronics and suitable for cellular infrastructure, WiMAX subscriber units, and CATV/CMTS systems requiring stable component supply, RoHS-compliant sourcing, and long-term lifecycle support.

Supply support for HMC536LP2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Analog Devices, Inc. is a global semiconductor leader specializing in high-performance analog, mixed-signal, and RF technologies for communications, industrial, and automotive markets.

The HMC536LP2 belongs to Analog Devices' legacy Hittite Microwave GaAs MMIC switch portfolio, engineered specifically for high-linearity, wideband T/R switching in wireless infrastructure and test equipment.

FAQ

What is the recommended DC blocking capacitor value for HMC536LP2 RF ports?

Capacitor value depends on lowest operating frequency: use ≥100 pF for 500 MHz minimum, ≥47 pF for 1 GHz minimum, and ≥10 pF for 3 GHz minimum. The evaluation board uses 100 pF 0402 capacitors. All RFC, RF1, and RF2 ports are DC-coupled and require external blocking caps; improper selection causes low-frequency roll-off or impedance mismatch in the HMC536LP2 signal path.

Does HMC536LP2 support both +3 V and +5 V control simultaneously?

No, HMC536LP2 supports either +3 V or +5 V control voltage-not both simultaneously. The control inputs A and B accept 0 V (low) and +3 V or +5 V (high) with ±0.2 V tolerance. Using +3 V yields +29 dBm P0.1dB; +5 V yields +33 dBm. Mixing voltages invalidates bias conditions and may degrade HMC536LP2 reliability or linearity.

Is the exposed ground paddle on HMC536LP2 electrically connected to internal die ground?

Yes, the exposed metal paddle on the bottom of the HMC536LP2 package is internally connected to RF/DC ground and must be soldered fully to the PCB ground plane. Thermal resistance (75 °C/W) and isolation (>27 dB) depend on this connection. Leaving the paddle unconnected degrades HMC536LP2 thermal performance and increases RF leakage between RF1 and RF2 ports.

What is the absolute maximum RF input power the HMC536LP2 can handle continuously?

The HMC536LP2 absolute maximum continuous RF input power is defined by its hot-switch power level: +29 dBm at +3 V control and +33 dBm at +5 V control. Exceeding these levels risks permanent damage. Derating applies above 85 °C ambient: dissipation must be reduced by 13.3 mW/°C. These limits apply regardless of duty cycle and are validated for HMC536LP2 operation across DC–6 GHz.

Can HMC536LP2 be used in systems requiring ESD protection beyond Class 1A?

No, HMC536LP2 has Class 1A HBM ESD rating (≤250 V), which is typical for GaAs MMICs. It is not rated for higher ESD classes. System-level ESD protection (e.g., external TVS diodes at RF ports) is required in environments exceeding IEC 61000-4-2 Level 2. Relying solely on HMC536LP2's intrinsic ESD robustness is insufficient for industrial or outdoor deployments where HMC536LP2 may be exposed to handling or field surges.