Analog Devices Inc. HMC555-SX

Overview

HMC555-SX from Analog Devices (formerly Hittite Microwave) is a GaAs MMIC I/Q mixer die designed for image-reject mixing and single-sideband upconversion in 31–38 GHz microwave systems. It delivers 12.5 dB typical conversion loss, 17 dB image rejection, and +21 dBm input IP3, operating with +17 dBm LO drive and requiring no DC bias. It serves as a compact, passive alternative to hybrid IRM assemblies in point-to-point radio transceivers.

For engineers reviewing the HMC555-SX datasheet, HMC555-SX pinout, HMC555-SX application, or HMC555-SX equivalent, this page provides verified RF performance data, die-level mounting guidance, IF/RF/LO port roles, thermal limits, and comparable millimeter-wave mixer alternatives - all specific to the bare-die variant used in custom MMIC assemblies.

Technical Context

The HMC555-SX integrates two double-balanced mixer cells and an on-die 90° hybrid in a GaAs MESFET process, enabling true quadrature operation without external hybrids for IF generation. Its passive topology eliminates DC bias requirements and supports DC–3.5 GHz IF bandwidth.

Performance is characterized with 1-mil × 12-mil bond wires in a 50 Ω test fixture; RF/LO ports are AC-coupled and 50 Ω matched, while IF1/IF2 are DC-coupled with ±3 mA current limit. Thermal resistance is 111.6 °C/W (channel to die bottom), and absolute max RF input is +19 dBm.

Key Specifications

Pinout & Package

Package: Bare die in WP-3 waffle pack; 0.102 mm (4 mil) thick GaAs substrate with gold backside metallization and gold bond pads. Backside must be connected to RF/DC ground.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar I/Q mixer applications.

Compared with HMC1048LC4 and QPM1002, the HMC555-SX offers the smallest footprint and lowest DC overhead for passive, high-isolation I/Q mixing at 31–38 GHz - making it optimal for space-constrained, battery- or thermally limited E-band platforms where external LO amplification is already available.

Availability

HMC555-SX is available at Aetrix Electronics and suitable for microwave radio, satellite communication terminals, military radar front ends, and millimeter-wave test equipment requiring stable component supply and traceable GaAs MMIC sourcing.

Supply support for HMC555-SX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Analog Devices, Inc. (including legacy Hittite Microwave) is a global leader in high-performance analog, RF, and mixed-signal semiconductors, serving communications, defense, and instrumentation markets.

The HMC555-SX belongs to Analog Devices' millimeter-wave MMIC mixer product line, engineered specifically for compact, high-isolation, bias-free I/Q signal processing in E-band wireless infrastructure and aerospace systems.

FAQ

What is the recommended LO drive level for optimal performance of the HMC555-SX?

The HMC555-SX achieves best image rejection and conversion loss at +17 dBm LO drive, as specified in its electrical tables. Performance remains functional from +15 dBm to +19 dBm, but deviation beyond this range increases amplitude/phase imbalance and degrades sideband suppression. The HMC555-SX absolute maximum LO rating is +27 dBm, though sustained operation above +19 dBm risks compression and accelerated aging.

Does the HMC555-SX require DC bias or external power supplies?

No, the HMC555-SX is a fully passive GaAs MMIC mixer and requires no DC bias or power supply connections. Its operation relies solely on RF, LO, and IF signal energy. All bond pads - including IF1 and IF2 - are DC-coupled but must not source or sink more than ±3 mA to avoid die malfunction or permanent damage.

How should the HMC555-SX die be mounted and wire-bonded?

The HMC555-SX die must be attached eutectically (80/20 AuSn at 255–290 °C) or with conductive epoxy to a grounded metal carrier. Bonding uses 1-mil gold wire with <12-mil length; stage temperature should be 150 °C for thermosonic bonding. The backside (gold metallization) must make low-inductance contact to RF ground, and the die surface must never be touched - only handled by vacuum collet at edges.

What is the function of the redundant IF pads (2/3 and 5/6) on the HMC555-SX?

Pads 2 and 3 serve as primary IF2 and IF1 outputs, respectively; pads 5 and 6 are electrically identical alternate locations for IF2 and IF1, placed on the opposite side of the die. This redundancy allows flexible PCB or substrate routing in tight MMIC layouts - for example, connecting IF1 to one edge and IF2 to the other to minimize crosstalk and bond wire inductance in high-frequency assemblies.

Can the HMC555-SX be used for both upconversion and downconversion?

Yes, the HMC555-SX is bidirectional: it functions as an image-reject downconverter (RF→IF) or single-sideband upconverter (IF→RF), depending on signal injection direction. In upconverter mode, it achieves sideband rejection up to 30 dBc with +19 dBm LO drive, and its DC–3.5 GHz IF bandwidth supports complex baseband modulation schemes without external IF filtering.