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Analog Devices Inc. HMC585MS8GE

Part No.:
HMC585MS8GE
Manufacturer:
Analog Devices Inc.
Category:
RF Mixers
Package:
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Datasheet:
AetrixHMC585MS8GE.pdf
Description:
IC MMIC MIXER HI IP3 8-MSOP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,329

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Product details

Overview

HMC585MS8GE from Hittite Microwave Corporation is a GaAs MMIC passive mixer with integrated LO amplifier, operating as a downconverter or upconverter in RF systems from 400–650 MHz, delivering +33 dBm input IP3, 9 dB typical conversion loss, and -2 to +4 dBm LO drive sensitivity at +5 V/50 mA supply - deployed in GSM/GPRS/EDGE and W-CDMA basestation receivers.

For engineers reviewing the HMC585MS8GE datasheet, HMC585MS8GE pinout, HMC585MS8GE application, or HMC585MS8GE equivalent, key selection criteria include its high-side/low-side LO flexibility (300–750 MHz), DC–250 MHz IF bandwidth, MSOP-8 package compatibility, and RF-to-IF isolation performance across temperature.

Technical Context

This device integrates a broadband LO amplifier with a passive double-balanced mixer core, enabling high dynamic range operation without external LO buffering. Its GaAs MMIC process ensures stable gain flatness and spurious suppression over -40°C to +85°C.

The RF and IF ports are DC-coupled (with ±40 mA current limit on IF), while the LO port is AC-coupled and 50 Ω matched. Spurious outputs (e.g., mRF ± nLO) are characterized up to 4th-order harmonics, with measured LO-to-RF isolation ≥7 dB and LO-to-IF isolation ≥10 dB.

Key Specifications

Parameter Value and Actual Design Meaning
RF Frequency Range400–650 MHz - supports cellular band reception/transmission in GSM, CDMA, and W-CDMA infrastructure.
LO Frequency Range300–750 MHz - enables both high-side and low-side injection for flexible frequency planning.
IF Frequency RangeDC–250 MHz - accommodates baseband, low-IF, and zero-IF receiver architectures.
Input IP3 (Typ.)+33 dBm - provides high linearity for multi-carrier basestation applications with minimal intermodulation distortion.
Conversion Loss9 dB (typ.) - defines signal path attenuation; requires downstream LNA gain budgeting.
LO Drive Level-2 to +4 dBm - reduces need for external LO amplification, lowering system power and complexity.
Supply Requirement+5 V @ 50 mA - single-supply operation simplifies biasing versus dual-rail mixer solutions.

Pinout & Package

Package: 8-lead MSOP (Mini Small Outline Package), 3.0 × 3.0 × 0.85 mm body, RoHS-compliant matte tin finish, MSL1 rated (260 °C peak reflow).

Pin/Terminal Circuit Role Design Meaning
1LO InputAC-coupled, 50 Ω matched port; accepts -2 to +4 dBm LO drive without external matching.
2No ConnectInternally unconnected; must remain floating per design - no PCB trace or pull-up/down.
3, 6, 7GroundRF ground terminals; require direct soldering to PCB ground plane with multiple vias for low-inductance return path.
4Vdd+5 V supply for integrated LO amplifier; requires external RF bypass capacitor (e.g., 100 pF + 10 nF in parallel).
5IF Output/InputDC-coupled port; supports DC–250 MHz IF; limited to ±40 mA DC current to prevent damage.
8RF Input/OutputDC-coupled, 50 Ω matched RF port; handles +27 dBm max input; designed for direct connection to antenna or filter network.

Key Features

Feature Design Value
Integrated LO amplifierEliminates discrete LO buffer stage, reducing board area and insertion loss in RF front-end designs.
+33 dBm input IP3Enables handling of strong adjacent-channel interferers in dense spectral environments like cable modem termination systems.
DC–250 MHz IF bandwidthSupports zero-IF and low-IF receiver topologies without external IF transformers or baluns.
MSOP-8 package14.8 mm² footprint enables compact multilayer PCB layouts in space-constrained basestation modules.
High LO-to-RF/IF isolation≥7 dB LO-to-RF and ≥10 dB LO-to-IF isolation minimizes LO leakage into RF/IF paths, easing filtering requirements.

Applications

Basestations & Repeaters GSM/GPRS/EDGE Infrastructure

Use Scenario: Downconversion of 400–650 MHz cellular signals in macrocell and microcell basestation transceivers.

IC Role / Device Role / Timing Role: Passive mixer core with integrated LO amplifier performing RF-to-IF translation in receive chain.

Use Value: +33 dBm IP3 maintains signal integrity under multi-carrier loading; 9 dB conversion loss enables adequate SNR after LNA gain staging.

Use Scenario: Low-IF receiver front-end in GSM900 and DCS1800 base transceiver stations (BTS).

IC Role / Device Role / Timing Role: RF mixer translating 900/1800 MHz bands (via harmonic mixing or external upconversion) with LO drive tolerance from -2 to +4 dBm.

Use Value: Single +5 V supply and MSOP-8 package simplify integration into legacy BTS RF modules requiring high linearity and thermal stability.

CDMA/W-CDMA Basestations Cable Modem Termination Systems

Use Scenario: Wide-dynamic-range downconversion in 3G RNC and Node B equipment operating in 800/1900 MHz bands.

IC Role / Device Role / Timing Role: High-linearity mixer supporting simultaneous channel reception with minimal intermodulation distortion.

Use Value: Input P1dB of +22 dBm and robust IP3 vs. temperature performance (-40°C to +85°C) ensure consistent operation across outdoor cabinet environments.

Use Scenario: Upconversion of DOCSIS upstream signals (5–42 MHz) to 5–204 MHz IF before final RF transmission.

IC Role / Device Role / Timing Role: Upconverter mixer with integrated LO amplifier driving cable plant interface with low phase noise contribution.

Use Value: DC–250 MHz IF bandwidth covers full DOCSIS upstream spectrum; LO drive flexibility allows use with low-power synthesizers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-IP3 SMT mixer applications.

Alternative Part Technical Difference Application Difference Selection Advice
HMC1048LP4EWider RF range (10–4000 MHz), higher conversion loss (11 dB), no integrated LO amp, QFN-24 package.Used in wideband test equipment and broadband receivers where LO buffering is already present.Select when ultra-wide RF coverage is required and external LO amplification is acceptable.
ADL5801ACPZ-R7Higher IF bandwidth (DC–450 MHz), lower IP3 (+28 dBm), +5.5 V supply, LFCSP-24 package.Preferred in high-speed data converter interfaces and software-defined radio front-ends needing extended IF response.Select when wider IF bandwidth outweighs IP3 requirement and larger package is acceptable.

Compared with HMC585MS8GE, HMC1048LP4E trades integrated LO functionality and compact MSOP-8 size for broader RF coverage, while ADL5801ACPZ-R7 offers greater IF bandwidth but sacrifices 5 dB of input linearity - making HMC585MS8GE optimal for cost- and space-sensitive 2.5G/3G infrastructure where +33 dBm IP3 and minimal external components are critical.

Availability

HMC585MS8GE is available at Aetrix Electronics and suitable for basestation transceivers, wireless repeaters, and cable modem termination systems requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.

Supply support for HMC585MS8GE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Hittite Microwave Corporation (now part of Analog Devices) specialized in high-frequency RFICs and MMICs for wireless infrastructure, defense, and test instrumentation markets.

The HMC585MS8GE belongs to Hittite's high-IP3 SMT mixer product line, engineered specifically for cellular basestation and broadband communication systems demanding superior linearity and integration in compact surface-mount packages.

FAQ

What is the maximum RF input power rating for the HMC585MS8GE?

The HMC585MS8GE has an absolute maximum RF input power rating of +27 dBm. Exceeding this level risks permanent damage to the internal GaAs mixer diodes or LO amplifier. For reliable operation, design margins should keep peak RF input below +22 dBm (the typical input P1dB point), especially under modulated signal conditions with high crest factors. The HMC585MS8GE datasheet specifies this limit under Absolute Maximum Ratings on page 9-361.

Does the HMC585MS8GE require external LO amplification?

No, the HMC585MS8GE does not require external LO amplification because it integrates a GaAs LO amplifier optimized for -2 to +4 dBm drive levels. This eliminates the need for discrete LO buffer stages in most 2.5G/3G infrastructure designs. The HMC585MS8GE's internal LO amp delivers sufficient gain and isolation to directly drive the mixer core while maintaining low phase noise degradation - confirmed in the Electrical Specifications table and LO drive vs. IP3 plots on pages 9-358–9-359.

Can the HMC585MS8GE be used for upconversion applications?

Yes, the HMC585MS8GE supports upconversion with verified +27 dBm input IP3 performance at 0 dBm LO drive, as documented in the "Upconverter Performance" section (page 9-357). Its symmetric architecture and broadband LO range (300–750 MHz) enable bidirectional operation. When using the HMC585MS8GE as an upconverter, ensure proper IF port DC biasing and verify LO/RF port isolation to avoid feedthrough - particularly critical in full-duplex systems.

What is the recommended PCB grounding strategy for the HMC585MS8GE?

The HMC585MS8GE requires all ground pins (3, 6, 7) and the exposed paddle to be soldered directly to a low-inductance RF ground plane using multiple via holes (≥4 per ground pin). Per the Outline Drawing notes (page 9-361), failure to do so degrades LO-to-RF isolation and increases conversion loss. The evaluation board (PCB #104813) uses Rogers 4350 substrate with controlled 50 Ω impedance traces - a practice that must be replicated in production layouts for the HMC585MS8GE to meet datasheet performance.

Is the HMC585MS8GE pin-compatible with the HMC585MS8G?

Yes, the HMC585MS8GE is pin-compatible with the HMC585MS8G - both share identical MSOP-8 pinout, electrical specifications, and mechanical outline. The only differences are RoHS compliance (matte Sn finish vs. Sn/Pb), MSL1 reflow profile (260 °C vs. 235 °C), and marking (H585 + 4-digit lot code). No PCB layout changes are needed when substituting HMC585MS8GE for HMC585MS8G in new designs or legacy refreshes.

HMC585MS8GE Specifications

Product attributes
Attribute value
Manufacturer:
Analog Devices Inc.
Series:
-
Package/Case:
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging:
Bulk
Product Status:
Obsolete
RF Type:
General Purpose
Frequency:
400MHz ~ 650MHz
Number of Mixers:
1
Gain:
-
Noise Figure:
-
Secondary Attributes:
Up/Down Converter
Current - Supply:
50mA
Voltage - Supply:
5V
Mounting Type:
Surface Mount
Supplier Device Package:
8-MSOP

HMC585MS8GE FAQ

1.How can I place an order for HMC585MS8GE through Aetrix?

Please submit a Request for Quotation (RFQ) for HMC585MS8GE on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for HMC585MS8GE reliable?

The price and inventory of HMC585MS8GE are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HMC585MS8GE is usually 5 days.

3.What payment methods are accepted for HMC585MS8GE?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HMC585MS8GE transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for HMC585MS8GE?

HMC585MS8GE orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your HMC585MS8GE order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for HMC585MS8GE?

For technical support, including HMC585MS8GE datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HMC585MS8GE requirements.

6.How does Aetrix verify that HMC585MS8GE is sourced from the original manufacturer or authorized distributors?

All HMC585MS8GE products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HMC585MS8GE meets industry standards.

7.What is the process for return or replacement of HMC585MS8GE?

All HMC585MS8GE units undergo pre-shipment inspection (PSI). If there is an issue with HMC585MS8GE, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The HMC585MS8GE part is unused and in its original packaging.

Return procedure for HMC585MS8GE:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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