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Analog Devices Inc. HMC665LP4ETR
- Part No.:
- HMC665LP4ETR
- Manufacturer:
- Analog Devices Inc.
- Category:
- RF Mixers
- Package:
- 24-VFQFN Exposed Pad
- Datasheet:
-
HMC665LP4ETR.pdf
- Description:
- IC MMIC MIXER LO/IF AMP 24-QFN
- Quantity:
- Payment:
- Shipping:
Inventory:1,831
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Product details
Overview
HMC665LP4ETR from Analog Devices (formerly Hittite Microwave) is a GaAs MMIC mixer IC with integrated LO and IF amplifiers, designed for RF upconversion and downconversion in the 0.7–1.2 GHz band. It delivers +23 dBm input IP3, 10 dB conversion gain (downconverter mode), and operates with only –3 dBm LO drive. It is used in compact transceivers for GSM, WCDMA, and WiMAX infrastructure.
For engineers reviewing the HMC665LP4ETR datasheet, HMC665LP4ETR pinout, HMC665LP4ETR application, or HMC665LP4ETR equivalent, key selection criteria include its high linearity (+23 dBm IIP3), low LO drive requirement (–3 to +6 dBm), 24-lead 4×4 mm QFN package, and dual-mode operation without external amplification.
Technical Context
The HMC665LP4ETR integrates a passive double-balanced mixer core with monolithic LO and IF amplifiers on a single GaAs die, enabling full-conversion functionality in one chip. Its architecture supports both high-side and low-side LO injection and maintains stable performance across –40°C to +85°C.
It features DC-coupled RF, LO, and MIXLO ports (with external DC blocking required), AC-coupled IFOUT, and bias-controlled VccLO/VddIF supplies. The device achieves 36 dB LO-to-RF isolation and exhibits <10 dB noise figure in downconversion mode at 250 MHz IF.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| RF/LO Frequency Range | 0.7–1.2 GHz - Covers full GSM, WCDMA, and TD-SCDMA bands without retuning. |
| IF Frequency Range | 250–450 MHz - Enables flexible IF planning for adjacent-channel rejection and filtering. |
| Conversion Gain (Downconv) | 10 dB typical - Eliminates need for external IF amplifier stages in many receiver designs. |
| Input IP3 | +23 dBm - Supports high-dynamic-range cellular base station receivers handling strong interferers. |
| LO Drive Requirement | –3 to +6 dBm - Reduces LO synthesizer output power and filtering complexity. |
| Noise Figure (SSB) | 10 dB - Maintains system sensitivity in downconverter mode at 250 MHz IF. |
| LO-to-RF Isolation | 36 dB typical - Minimizes LO leakage into antenna path, easing front-end filter requirements. |
| Supply Current | 150 mA at +5 V - Enables efficient power delivery with standard LDOs or DC-DC converters. |
Pinout & Package
Package: 24-lead 4×4 mm leadless QFN (LP4) with exposed ground paddle; RoHS-compliant matte tin finish; MSL1 rating; max reflow 260°C.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 4, 5, 6, 8, 11, 14, 15, 19, 20, 22–24 | N/C | No internal connection; may be tied to RF ground without performance impact. |
| 3 | RF | DC-coupled 50 Ω RF port - accepts direct antenna or PA output; requires no external DC block. |
| 7 | IFIN | 50 Ω-matched IF input with internal 56 nH inductor to ground - optimized for 250–450 MHz IF signal injection. |
| 9 | CAP | AC ground node - requires external 0.01 µF capacitor to ground for low-frequency bypassing of VddIF supply. |
| 10 | MIXIF | DC-coupled mixer IF output - must be externally DC-blocked unless operating to DC; current-limited to ±18 mA. |
| 12 | IFOUT | AC-coupled 50 Ω IF output - ready for direct connection to ADC or IF filter without additional coupling cap. |
| 13 | VddIF | IF amplifier supply - requires choke inductor and bypass capacitors per application circuit to suppress noise. |
| 16 | MIXLO | DC-coupled LO input to mixer core - requires external DC blocking capacitor before connection to LO source. |
| 17 | GND | Ground reference - backside exposed paddle must be soldered to PCB ground plane for thermal and RF integrity. |
| 18 | VccLO | LO amplifier supply and RF output - requires three external bypass capacitors (100 pF, 1000 pF, 2.2 µF) for stability. |
| 21 | LO | DC-coupled LO amplifier input - requires external DC blocking capacitor; matched to 50 Ω. |
Key Features
| Feature | Design Value |
|---|---|
| Integrated LO amplifier | Reduces external driver count and board space; enables –3 dBm LO drive compatibility with low-power synthesizers. |
| Integrated IF amplifier | Provides 10 dB net conversion gain in downconverter mode, eliminating discrete IF gain stage in most designs. |
| +23 dBm Input IP3 | Enables robust operation in dense RF environments such as multi-carrier base stations without desensitization. |
| 36 dB LO-to-RF isolation | Lowers risk of LO radiation through antenna path, reducing EMI compliance testing effort and filter cost. |
| 24-lead 4×4 mm QFN | Supports high-density RF layout with low-inductance ground paddle; compatible with standard SMT assembly processes. |
| –40°C to +85°C operation | Validated for outdoor and industrial wireless infrastructure deployments without derating. |
Applications
| Cellular Base Station Receiver | WiMAX Transmitter |
|---|---|
Use Scenario: Downconverting 700–1200 MHz RF signals to 250–450 MHz IF in macrocell BTS receive chains. IC Role / Device Role / Timing Role: Primary RF-to-IF converter with integrated LO and IF amplification - performs frequency translation and gain in one stage. Use Value: +23 dBm IIP3 ensures immunity to co-site interferers; 10 dB gain reduces cascaded noise figure by minimizing subsequent stage contribution. |
Use Scenario: Upconverting 250–450 MHz IF signals to 700–1200 MHz RF band in fixed wireless access transmitters. IC Role / Device Role / Timing Role: High-linearity active mixer with embedded LO driver - handles modulation upconversion with minimal distortion. Use Value: 11 dB upconverter gain simplifies transmit chain design; –3 dBm LO drive lowers synthesizer power consumption and heat dissipation. |
| WCDMA Repeater Unit | Test Equipment Signal Generator |
Use Scenario: Bidirectional wideband repeater requiring simultaneous up/down conversion in same band. IC Role / Device Role / Timing Role: Dual-mode RFIC supporting configurable LO injection - enables shared LO path and compact form factor. Use Value: Single-chip integration reduces component count and inter-stage matching complexity; 4×4 mm footprint eases thermal management in sealed enclosures. |
Use Scenario: Modular RF signal source generating calibrated 0.7–1.2 GHz outputs from baseband or IF inputs. IC Role / Device Role / Timing Role: Precision conversion element in programmable synthesizer architecture - provides repeatable gain and linearity across temperature. Use Value: 10 dB conversion gain stability (±0.5 dB over –40°C to +85°C) ensures consistent output level calibration without real-time compensation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF mixer applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| HMC666LP4ETR | Same 4×4 mm QFN package but optimized for 1.7–2.2 GHz RF range; +22 dBm IIP3; 9 dB gain. | Targets LTE Band 3/4 uplink/downlink; not suitable for sub-1.2 GHz GSM/WiMAX bands. | Select when operating above 1.4 GHz; avoid for HMC665LP4ETR's 0.7–1.2 GHz use cases. |
| ADL5801ACPZ-R7 | SiGe BiCMOS; 0.4–2.5 GHz RF; +22 dBm IIP3; requires +13 dBm LO drive; 20-lead 4×4 mm QFN. | Higher LO power demand increases synthesizer complexity; lower integration (no LO amp). | Choose for broader frequency coverage where LO power is available; not drop-in due to LO drive and bias differences. |
Compared with HMC665LP4ETR, HMC666LP4ETR shifts usable bandwidth upward while retaining identical packaging and integration level, whereas ADL5801ACPZ-R7 trades LO drive efficiency for wider RF range and different process technology - neither offers pin-to-pin or functional replacement without circuit redesign.
Availability
HMC665LP4ETR is available at Aetrix Electronics and suitable for cellular infrastructure, broadband wireless access points, and test equipment requiring stable component supply across extended temperature ranges and high linearity.
Supply support for HMC665LP4ETR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Analog Devices acquired Hittite Microwave in 2014 and continues to manufacture and support its high-performance RF IC portfolio.
The HMC665LP4ETR belongs to Hittite's legacy GaAs MMIC mixer family, engineered specifically for compact, high-dynamic-range transceivers in wireless infrastructure and test instrumentation.
FAQ
What is the primary function of the HMC665LP4ETR in RF systems?
The HMC665LP4ETR functions as a highly integrated RF mixer IC with built-in LO and IF amplifiers, performing both upconversion and downconversion between 0.7–1.2 GHz RF and 250–450 MHz IF bands. Its design eliminates discrete amplification stages, making it ideal for space-constrained transceivers in cellular and WiMAX infrastructure where linearity and low LO drive are critical.
Does the HMC665LP4ETR require external DC blocking capacitors?
Yes - the HMC665LP4ETR requires external DC blocking capacitors on MIXLO (Pin 16) and LO (Pin 21) ports, as both are DC-coupled but intended for AC-coupled LO signal injection. The RF (Pin 3) port is also DC-coupled and 50 Ω matched, so no blocking is needed there unless DC isolation is required by system architecture.
What is the maximum operating temperature and thermal management requirement for HMC665LP4ETR?
The HMC665LP4ETR operates from –40°C to +85°C ambient, with a junction temperature limit of 150°C. Its thermal resistance is 67.2°C/W (junction-to-ground paddle), and the exposed paddle must be soldered to a solid PCB ground plane with multiple thermal vias. At 150 mA supply current and 5 V, power dissipation is ~0.75 W - adequate copper area and airflow ensure safe operation within spec.
Can the HMC665LP4ETR be used in both upconverter and downconverter modes without hardware changes?
Yes - the HMC665LP4ETR supports both modes using the same die and package. In downconverter mode, RF (Pin 3) is input and IFOUT (Pin 12) is output; in upconverter mode, IFIN (Pin 7) is input and RF (Pin 3) becomes output. External matching networks and LO injection side (high/low) determine mode - no internal configuration or pin strapping is required.
What evaluation boards are available for the HMC665LP4ETR?
Two dedicated evaluation boards are available: PCB 122009 for upconverter mode and PCB 122010 for downconverter mode. Both use Arlon 25FR substrate, feature SMA connectors (J1–J3), and implement recommended bypassing (C1–C8), inductors (L1–L3), and resistors (R1–R5). These boards are supplied by Analog Devices and documented in the HMC665LP4E datasheet Rev. v00.0508.
HMC665LP4ETR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc.
- Series:
- -
- Package/Case:
- 24-VFQFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- RF Type:
- LTE, WiMax
- Frequency:
- 700MHz ~ 1.2GHz
- Number of Mixers:
- 1
- Gain:
- 10dB
- Noise Figure:
- 10dB
- Secondary Attributes:
- Up/Down Converter
- Current - Supply:
- 150mA
- Voltage - Supply:
- 5V
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 24-QFN (4x4)
HMC665LP4ETR FAQ
1.How can I place an order for HMC665LP4ETR through Aetrix?
Please submit a Request for Quotation (RFQ) for HMC665LP4ETR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HMC665LP4ETR reliable?
The price and inventory of HMC665LP4ETR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HMC665LP4ETR is usually 5 days.
3.What payment methods are accepted for HMC665LP4ETR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HMC665LP4ETR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HMC665LP4ETR?
HMC665LP4ETR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HMC665LP4ETR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HMC665LP4ETR?
For technical support, including HMC665LP4ETR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HMC665LP4ETR requirements.
6.How does Aetrix verify that HMC665LP4ETR is sourced from the original manufacturer or authorized distributors?
All HMC665LP4ETR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HMC665LP4ETR meets industry standards.
7.What is the process for return or replacement of HMC665LP4ETR?
All HMC665LP4ETR units undergo pre-shipment inspection (PSI). If there is an issue with HMC665LP4ETR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HMC665LP4ETR part is unused and in its original packaging.
Return procedure for HMC665LP4ETR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
HMC665LP4ETR Tags
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