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Analog Devices Inc. HMC689LP4ETR
- Part No.:
- HMC689LP4ETR
- Manufacturer:
- Analog Devices Inc.
- Category:
- RF Mixers
- Package:
- 24-VFQFN Exposed Pad
- Datasheet:
-
HMC689LP4ETR.pdf
- Description:
- IC MMIC MIXER BICMOS 24QFN
- Quantity:
- Payment:
- Shipping:
Inventory:4,532
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Product details
Overview
HMC689LP4ETR from Analog Devices (formerly Hittite Microwave) is a BiCMOS MMIC double-balanced mixer with integrated LO amplifier, designed for RF-to-IF downconversion and upconversion in 2.0–2.7 GHz systems. It delivers 7.5 dB typical conversion loss, +32 dBm input IP3, and +23 dBm input P1dB at 0 dBm LO drive, operating with +5 V supply and optimized for high-side LO injection in cellular base station transceivers.
For engineers reviewing the HMC689LP4ETR datasheet, HMC689LP4ETR pinout, HMC689LP4ETR application, or HMC689LP4ETR equivalent, key selection criteria include its 24-lead 4×4 mm QFN package, DC–800 MHz differential IF bandwidth, 26–34 dB LO-to-RF isolation, and compatibility with GSM/CDMA/LTE signal chains requiring high linearity and low noise figure (7.5 dB SSB).
Technical Context
The HMC689LP4ETR integrates a broadband LO amplifier driving a passive double-balanced mixer core, enabling both upconversion and downconversion without external LO buffering. Its internal RF balun provides 50 Ω single-ended RF port matching, while differential IFN/IFP pins support DC-coupled or AC-coupled operation up to 800 MHz.
It operates across –40 °C to +85 °C with three independent +5 V supplies (Vcc1/Vcc2/Vcc3), G_BIAS set to +2.8 V for nominal performance, and LO bias adjusted via external resistor on LO_BIAS pin. The device uses a 24-lead QFN with exposed thermal paddle requiring direct PCB ground connection per RF design best practices.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| RF Frequency Range | 2.0–2.7 GHz - Covers full LTE Band 7 (2.5–2.69 GHz), Band 1 (1.92–1.98 GHz not included), and WiMAX 2.3–2.4 GHz bands. |
| LO Frequency Range | 2.0–3.0 GHz - Supports high-side LO injection (e.g., LO = RF + IF) for downconversion with IF = 300 MHz. |
| IF Bandwidth | DC–800 MHz - Enables baseband I/Q sampling, zero-IF architectures, and wideband OFDM signal processing. |
| Conversion Loss | 7.5 dB typical - Low insertion loss preserves SNR in receiver front-ends before LNA or ADC stages. |
| Input IP3 | +32 dBm - Ensures robust adjacent-channel rejection in dense multi-carrier 3G/4G base station environments. |
| Noise Figure (SSB) | 7.5 dB - Matches system-level NF budget for cascaded receiver chains targeting <9 dB overall NF. |
| LO Drive Level | –3 to +3 dBm - Reduces need for external LO amplification, simplifying synthesizer interface design. |
| Supply Current | 152–185 mA @ +5 V - Total quiescent draw enables thermal management in compact 4×4 mm RF modules. |
Pinout & Package
Package: 24-lead 4×4 mm QFN with exposed thermal paddle (RoHS-compliant matte Sn finish, MSL1, peak reflow 260 °C). Ground paddle and all GND pins must be soldered directly to PCB RF ground plane using multiple vias.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 6, 7, 11–14, 18, 20, 23 | N/C | No internal connection; may be tied to RF ground without performance impact. |
| 2, 5, 15, 17 | GND | DC and RF ground reference points; require low-inductance connection to PCB ground plane. |
| 3 | RF | 50 Ω matched single-ended RF input/output; internally DC-short via balun - no external DC blocking needed. |
| 4 | TAP | Center tap of internal RF balun secondary; must be shorted to ground with 0 Ω resistor near IC. |
| 8, 10, 24 | Vcc1, Vcc2, Vcc3 | Three independent +5 V supply inputs; each requires local 0.1 µF bypass capacitor per datasheet layout guidelines. |
| 9 | LO_BIAS | Adjusts LO buffer bias current via external resistor; sets LO drive capability and power consumption. |
| 16 | LO | 50 Ω matched single-ended LO input; internally DC-short via balun - no external DC blocking required. |
| 19 | G_BIAS | Optional external bias node; +2.8 V applied for nominal conversion loss and IP3 performance. |
| 21, 22 | IFN, IFP | Differential IF output (downconv.) or input (upconv.); 50 Ω differential impedance - use AC coupling if DC operation not required. |
Key Features
| Feature | Design Value |
|---|---|
| Integrated LO amplifier | Eliminates external LO buffer stage, reducing component count and board area in compact transceiver modules. |
| High-side LO optimization | Enables standard high-side injection architecture (LO = RF + IF) with 26–34 dB LO-to-RF isolation at 2.5 GHz. |
| DC–800 MHz differential IF | Supports direct-conversion receivers and wideband digital predistortion (DPD) feedback paths without IF filtering constraints. |
| +32 dBm input IP3 | Handles strong interferers in multi-carrier LTE eNodeB deployments without compression or distortion. |
| 24-lead 4×4 mm QFN | Enables high-density RF layout with thermal paddle for 1.45 W continuous dissipation at Tcase = 85 °C. |
| –40 °C to +85 °C operation | Validated over full industrial temperature range, suitable for outdoor macrocell and small-cell base station enclosures. |
Applications
| Cellular Base Station Receiver | LTE FDD Transmitter Feedback Path |
|---|---|
|
Use Scenario: Downconverting 2.6 GHz LTE Band 7 signals to 300 MHz IF in macrocell remote radio head (RRH) receive chain. IC Role / Device Role / Timing Role: Double-balanced mixer with integrated LO amplifier performing RF-to-IF translation and LO amplification. Use Value: 7.5 dB conversion loss preserves receiver sensitivity; +32 dBm IP3 rejects adjacent LTE carriers and out-of-band blockers. |
Use Scenario: Sampling transmit path output for digital predistortion (DPD) correction in 2.5–2.7 GHz LTE MIMO active antenna systems. IC Role / Device Role / Timing Role: Upconverting baseband DPD error signal to RF for injection into transmitter loopback path. Use Value: DC–800 MHz IF bandwidth supports wide instantaneous DPD bandwidth; low LO drive simplifies synthesizer interface. |
| GSM/CDMA Multi-Standard Baseband | WiMAX 2.3–2.4 GHz Transceiver |
|
Use Scenario: Shared RF front-end supporting simultaneous GSM 1900 MHz and CDMA 2100 MHz operation in dual-mode repeater. IC Role / Device Role / Timing Role: High-linearity mixer handling multiple RF bands with common LO distribution and IF processing. Use Value: 2.0–2.7 GHz RF coverage spans both bands; +23 dBm P1dB accommodates varying input signal levels without gain compression. |
Use Scenario: Full-duplex WiMAX subscriber unit transceiver requiring separate up/down paths in 2.3–2.4 GHz band. IC Role / Device Role / Timing Role: Dual-role mixer used in both upconversion (BB→RF) and downconversion (RF→BB) modes. Use Value: Pin-compatible operation across modes reduces BOM count; 24–30 dB RF-to-IF isolation prevents transmit leakage into receive path. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF mixer applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| HMC688LP4ETR | Same 24-lead QFN package and 2.0–2.7 GHz RF range, but optimized for low-side LO injection (LO = RF – IF). | Requires LO frequency below RF band; unsuitable for high-side LO architectures without redesign. | Select HMC688LP4ETR only when system LO synthesizer operates below RF band and IF placement demands low-side injection. |
| ADL5801ACPZ-R7 | Active double-balanced mixer (GaAs pHEMT), 10–6000 MHz RF, no integrated LO amp, requires +7 dBm LO drive. | Higher LO drive requirement increases synthesizer complexity; wider RF bandwidth trades off noise figure (9.5 dB vs. 7.5 dB). | Choose ADL5801ACPZ-R7 for ultra-wideband lab instrumentation where LO drive headroom exists and 2.0–2.7 GHz coverage is subset of need. |
Compared with HMC689LP4ETR, HMC688LP4ETR offers identical form factor but inverted LO topology, while ADL5801ACPZ-R7 sacrifices integration and noise performance for broader frequency agility - making HMC689LP4ETR optimal for fixed-band, high-dynamic-range cellular infrastructure.
Availability
HMC689LP4ETR is available at Aetrix Electronics and suitable for cellular base stations, LTE repeaters, and WiMAX transceivers requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant packaging.
Supply support for HMC689LP4ETR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Analog Devices acquired Hittite Microwave in 2014 and maintains its high-frequency RF product portfolio, specializing in microwave ICs for communications, defense, and instrumentation markets.
The HMC689LP4ETR belongs to Hittite's legacy BiCMOS MMIC mixer family, engineered specifically for high-linearity, low-noise RF front-ends in 4G/LTE infrastructure equipment where integration, thermal efficiency, and repeatable RF performance are critical.
FAQ
What is the recommended LO drive level for optimal performance of the HMC689LP4ETR?
The HMC689LP4ETR achieves best-in-class IP3 (+32 dBm) and conversion loss (7.5 dB) at 0 dBm LO drive. It operates reliably across –3 to +3 dBm; lower LO drive increases conversion loss, while higher drive raises supply current without improving linearity. Always verify LO amplitude at the HMC689LP4ETR LO pin using calibrated RF measurement.
Does the HMC689LP4ETR support both upconversion and downconversion?
Yes, the HMC689LP4ETR supports both upconversion and downconversion. In downconversion mode, RF is input and IF is output; in upconversion, IF is input and RF is output. Its symmetric double-balanced architecture and DC–800 MHz IF bandwidth enable flexible use in transceiver signal chains - confirmed in the datasheet's "Upconverter Performance" section.
What is the function of the TAP pin (Pin 4) on the HMC689LP4ETR?
The TAP pin (Pin 4) is the center tap of the internal RF balun's secondary winding. It must be shorted to RF ground with a 0 Ω resistor placed as close as possible to the HMC689LP4ETR package. This connection stabilizes balun common-mode rejection and ensures specified RF port match and isolation performance across 2.0–2.7 GHz.
Can the HMC689LP4ETR operate with a single +5 V supply instead of three separate Vcc pins?
No - the HMC689LP4ETR requires three independent +5 V supplies (Vcc1, Vcc2, Vcc3) as defined in the pinout and application circuit. These power distinct internal blocks (LO amp, mixer core, bias networks). Connecting them together risks instability, degraded isolation, or excessive current draw. Each Vcc pin must have its own 0.1 µF bypass capacitor routed directly to ground.
Is the HMC689LP4ETR pin-compatible with the HMC688LP4ETR?
Yes, the HMC689LP4ETR is pin-for-pin compatible with the HMC688LP4ETR per the datasheet: same 24-lead 4×4 mm QFN footprint, identical pin functions, and shared evaluation board (PCB 118162). However, their internal LO amplifier tuning differs - HMC689LP4ETR is optimized for high-side LO, HMC688LP4ETR for low-side LO - so system-level LO frequency planning must align with the selected variant.
HMC689LP4ETR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc.
- Series:
- -
- Package/Case:
- 24-VFQFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- RF Type:
- LTE, WiMax
- Frequency:
- 2GHz ~ 2.7GHz
- Number of Mixers:
- 1
- Gain:
- -
- Noise Figure:
- 7.5dB
- Secondary Attributes:
- Up/Down Converter
- Current - Supply:
- 152mA
- Voltage - Supply:
- 4.75V ~ 5.25V
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 24-QFN (4x4)
HMC689LP4ETR FAQ
1.How can I place an order for HMC689LP4ETR through Aetrix?
Please submit a Request for Quotation (RFQ) for HMC689LP4ETR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HMC689LP4ETR reliable?
The price and inventory of HMC689LP4ETR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HMC689LP4ETR is usually 5 days.
3.What payment methods are accepted for HMC689LP4ETR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HMC689LP4ETR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HMC689LP4ETR?
HMC689LP4ETR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HMC689LP4ETR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HMC689LP4ETR?
For technical support, including HMC689LP4ETR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HMC689LP4ETR requirements.
6.How does Aetrix verify that HMC689LP4ETR is sourced from the original manufacturer or authorized distributors?
All HMC689LP4ETR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HMC689LP4ETR meets industry standards.
7.What is the process for return or replacement of HMC689LP4ETR?
All HMC689LP4ETR units undergo pre-shipment inspection (PSI). If there is an issue with HMC689LP4ETR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HMC689LP4ETR part is unused and in its original packaging.
Return procedure for HMC689LP4ETR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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