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Analog Devices Inc. HMC785LP4ETR
- Part No.:
- HMC785LP4ETR
- Manufacturer:
- Analog Devices Inc.
- Category:
- RF Mixers
- Package:
- 24-VFQFN Exposed Pad
- Datasheet:
-
HMC785LP4ETR.pdf
- Description:
- IC MMIC MIXER W/LO AMP 24-QFN
- Quantity:
- Payment:
- Shipping:
Inventory:4,662
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Product details
Overview
HMC785LP4ETR from Analog Devices (formerly Hittite Microwave) is a high-dynamic-range BiCMOS double-balanced mixer with integrated LO amplifier, designed for RF-to-IF downconversion and upconversion in 1.7–2.2 GHz systems. It delivers 8 dB typical conversion loss, +36 dBm input IP3, +26 dBm input P1dB, and operates with 50–300 MHz IF bandwidth at +5 V supply. It is used in LTE/WiMAX base station transceivers requiring low-side LO architecture.
For engineers reviewing the HMC785LP4ETR datasheet, HMC785LP4ETR pinout, HMC785LP4ETR application, or HMC785LP4ETR equivalent, key selection criteria include its 24-pin 4×4 mm QFN package, adjustable G_BIAS and LO buffer current (via R9), RF/LO/IF port return loss >15 dB across band, and compatibility with 50 Ω single-ended RF/LO and differential 50 Ω IF interfaces.
Technical Context
The HMC785LP4ETR implements a passive double-balanced mixer core with on-die LO amplifier and internal baluns on RF and LO ports. Its differential IF interface supports both upconversion and downconversion modes, with performance optimized for low-side LO injection in the 1.7–2.2 GHz RF band.
It features three independent +5 V supplies (Vcc1/Vcc2/Vcc3), programmable G_BIAS (0–5 V) for conversion loss/linearity trade-off, and LO buffer current adjustment via external R9 (200 Ω nominal). Thermal resistance is 37.04 °C/W to ground paddle, supporting operation from –40 °C to +85 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| RF Frequency Range | 1.7–2.2 GHz - Covers LTE Band 3 (1.8 GHz), Band 4 (1.7 GHz), and Band 25 (1.9 GHz) for cellular infrastructure. |
| LO Frequency Range | 1.5–2.2 GHz - Enables low-side LO injection for downconversion with ≥200 MHz IF offset. |
| IF Frequency Range | 50–300 MHz - Supports GSM/CDMA transmit/receive channel plans and OFDM baseband IF processing. |
| Conversion Loss | 8 dB typical - Low loss preserves SNR in receiver front-ends and reduces post-mixer gain requirements. |
| Input IP3 | +36 dBm typical - High linearity suppresses intermodulation distortion in multi-carrier LTE/WiMAX deployments. |
| Input P1dB | +26 dBm typical - Robust RF port handles strong interferers without compression in base station receivers. |
| LO–RF Isolation | 18–30 dB - Minimizes LO leakage into antenna path, easing filter requirements in TDD/FDD architectures. |
| Supply Current | 160–180 mA total at +5 V - Enables thermal-aware layout with <1.08 W max dissipation at 85 °C ambient. |
Pinout & Package
Package: 24-lead, 4 mm × 4 mm, RoHS-compliant QFN with exposed ground paddle (MSL1, 260 °C peak reflow). Body material is low-stress injection-molded plastic; leads and paddle plated with 100% matte tin.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 6, 7, 11–14, 18, 20, 23 | N/C | No connection; may be tied to RF ground without performance impact. |
| 2, 5, 15, 17 | GND | DC and RF ground connections; must be soldered to PCB ground plane with multiple vias. |
| 3 | RF | Single-ended 50 Ω RF input/output port, DC-short through internal balun - requires no external DC blocking. |
| 4 | TAP | Center tap of RF balun secondary - short to ground with 0 Ω resistor adjacent to IC for optimal balance. |
| 8, 10, 24 | Vcc1, Vcc2, Vcc3 | Independent +5 V power inputs - each requires local 0.1 µF bypass capacitor per application circuit. |
| 9 | LO_BIAS | LO buffer bias control - sets LO drive level and linearity via external R9 (200 Ω nominal). |
| 16 | LO | Single-ended 50 Ω LO input, DC-short through internal balun - enables direct connection to LO synthesizer. |
| 19 | G_BIAS | Gain/linearity control node - 2.5 V nominal sets conversion loss/IP3 trade-off; internal 15 kΩ divider allows external adjustment. |
| 21, 22 | IFN, IFP | Differential 50 Ω IF interface - supports AC-coupled or DC-coupled IF paths depending on baseband architecture. |
Key Features
| Feature | Design Value |
|---|---|
| Integrated LO amplifier | Eliminates external LO buffer stage, reducing component count and board area in compact RF modules. |
| Adjustable G_BIAS (0–5 V) | Enables real-time optimization of conversion loss vs. IP3 for varying signal dynamics in adaptive receivers. |
| LO buffer current tuning (R9) | Permits trade-off between LO drive capability (+6 dBm max) and power consumption (120–180 mA range). |
| 24-lead 4×4 mm QFN | Small footprint with exposed paddle ensures efficient thermal dissipation and repeatable RF grounding in multilayer PCBs. |
| Differential IF interface | Improves common-mode noise rejection and simplifies connection to ADC/DAC or IF filters in zero-IF or low-IF architectures. |
| Low-side LO optimization | Maximizes isolation and conversion efficiency for 1.7–2.2 GHz RF bands using standard IF frequencies below RF. |
Applications
| Cellular Base Station Receiver | LTE FDD Transmitter |
|---|---|
Use Scenario: Downconverting 1.8 GHz LTE Band 3 signals to 140 MHz IF in macrocell remote radio head (RRH). IC Role / Device Role / Timing Role: Double-balanced mixer with integrated LO amplifier performing RF-to-IF translation and LO amplification. Use Value: 8 dB conversion loss and +36 dBm IP3 maintain EVM <2.5% under multi-tone LTE 20 MHz modulation with adjacent channel interference. |
Use Scenario: Upconverting 120 MHz IF LTE signal to 1.9 GHz Band 25 for transmission in distributed antenna system (DAS). IC Role / Device Role / Timing Role: Double-balanced mixer operating in upconversion mode with low-side LO injection. Use Value: 25–39 dB RF-to-IF isolation prevents IF feedthrough and enables clean spectral output meeting ACLR >45 dBc. |
| WiMAX Base Station Transceiver | GSM/CDMA Repeater Front-End |
Use Scenario: Dual-mode WiMAX 2.3–2.7 GHz receive path using 200 MHz IF in outdoor base station unit. IC Role / Device Role / Timing Role: High-linearity mixer handling wide instantaneous bandwidth with integrated LO driver. Use Value: 300 MHz IF bandwidth and +26 dBm P1dB support 100 MHz channelization without gain compression in OFDMA receivers. |
Use Scenario: Bidirectional repeater amplifying 1.9 GHz PCS uplink and downlink signals with shared RF frontend. IC Role / Device Role / Timing Role: Mixer used in both transmit and receive paths with switchable LO configuration. Use Value: 18–30 dB LO–RF isolation minimizes self-interference, enabling >60 dB repeater gain without oscillation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF mixer applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| HMC685LP4E | Pin-for-pin compatible; identical pinout and package but lower IP3 (+34 dBm typ) and higher conversion loss (9 dB typ). | Less suitable for high-dynamic-range LTE-A carrier aggregation where third-order IMD must be suppressed below –60 dBc. | Select HMC685LP4E only when cost sensitivity outweighs linearity requirements and LO drive is constrained to ≤0 dBm. |
| ADL5802ACPZ-R7 | Active double-balanced mixer with 2.5–3.9 GHz RF range; requires external LO buffer; 7.5 dB conversion gain (not loss); 56-pin LFCSP. | Not drop-in replaceable due to different frequency coverage, gain architecture, and package; suited for higher-frequency small-cell radios. | Choose ADL5802ACPZ-R7 when system design targets 3.5 GHz TDD-LTE and requires conversion gain instead of passive loss. |
Compared with HMC685LP4E and ADL5802ACPZ-R7, the HMC785LP4ETR uniquely combines 1.7–2.2 GHz band optimization, integrated LO amplification, and +36 dBm IP3 in a compact 4×4 mm QFN-making it the preferred choice for cost- and size-constrained macro/micro base station receivers requiring robust out-of-band IMD suppression.
Availability
HMC785LP4ETR is available at Aetrix Electronics and suitable for cellular infrastructure, wireless repeaters, and WiMAX base stations requiring stable component supply, long-term lifecycle support, and traceable sourcing for production ramp.
Supply support for HMC785LP4ETR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Analog Devices acquired Hittite Microwave in 2014 and integrates its high-frequency RF portfolio into precision analog and RF solutions for communications, defense, and instrumentation markets.
The HMC785LP4ETR belongs to Hittite's legacy BiCMOS mixer product line, engineered specifically for high-linearity, low-distortion RF front-ends in 4G/LTE and WiMAX infrastructure equipment.
FAQ
What is the recommended LO drive level for optimal performance of the HMC785LP4ETR?
The HMC785LP4ETR achieves best conversion loss (8 dB typ) and IP3 (+36 dBm) at 0 dBm LO drive. It accepts –6 to +6 dBm LO input, with higher levels improving linearity at the cost of increased current draw. The integrated LO amplifier eliminates need for external driver stages, simplifying RF layout while maintaining consistent LO power across temperature.
Can the HMC785LP4ETR be used in both upconverter and downconverter configurations?
Yes, the HMC785LP4ETR supports both upconversion and downconversion modes. Its symmetric double-balanced architecture and differential IF interface allow flexible use: RF port serves as input for downconversion and output for upconversion, while LO remains fixed. Application circuits for both modes are documented in the datasheet, including evaluation PCB designs 125329 (downconverter) and 125354 (upconverter).
How does the G_BIAS pin affect HMC785LP4ETR performance?
The G_BIAS pin (Pin 19) adjusts the mixer's conversion loss and linearity trade-off: at 2.5 V, typical conversion loss is 8 dB and IP3 is +36 dBm; lowering G_BIAS to 2.0 V increases conversion loss to ~9 dB but raises IP3 to +38 dBm. This 0–5 V adjustable bias enables dynamic optimization for varying signal conditions without hardware changes.
What is the thermal management requirement for continuous operation of the HMC785LP4ETR?
The HMC785LP4ETR has a junction-to-ground-paddle thermal resistance of 37.04 °C/W. With 180 mA total supply current at +5 V (0.9 W dissipation), junction temperature rise is ~33 °C above PCB ground. To stay within 125 °C max junction rating at 85 °C ambient, ensure the exposed paddle is soldered to a ≥2 cm² copper pour with ≥6 thermal vias to inner ground planes.
Is the HMC785LP4ETR pin-compatible with any other Hittite/Analog Devices mixers?
Yes, the HMC785LP4ETR is pin-for-pin compatible with the HMC685LP4E, sharing identical 24-lead 4×4 mm QFN package, pinout, and footprint. This allows direct replacement in existing designs where higher linearity (+36 dBm vs. +34 dBm IP3) and lower conversion loss (8 dB vs. 9 dB) are needed without PCB revision.
HMC785LP4ETR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc.
- Series:
- -
- Package/Case:
- 24-VFQFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- RF Type:
- LTE, WiMax
- Frequency:
- 1.7GHz ~ 2.2GHz
- Number of Mixers:
- 1
- Gain:
- -
- Noise Figure:
- 8dB
- Secondary Attributes:
- Down Converter
- Current - Supply:
- 160mA
- Voltage - Supply:
- 4.75V ~ 5.25V
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 24-QFN (4x4)
HMC785LP4ETR FAQ
1.How can I place an order for HMC785LP4ETR through Aetrix?
Please submit a Request for Quotation (RFQ) for HMC785LP4ETR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HMC785LP4ETR reliable?
The price and inventory of HMC785LP4ETR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HMC785LP4ETR is usually 5 days.
3.What payment methods are accepted for HMC785LP4ETR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HMC785LP4ETR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HMC785LP4ETR?
HMC785LP4ETR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HMC785LP4ETR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HMC785LP4ETR?
For technical support, including HMC785LP4ETR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HMC785LP4ETR requirements.
6.How does Aetrix verify that HMC785LP4ETR is sourced from the original manufacturer or authorized distributors?
All HMC785LP4ETR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HMC785LP4ETR meets industry standards.
7.What is the process for return or replacement of HMC785LP4ETR?
All HMC785LP4ETR units undergo pre-shipment inspection (PSI). If there is an issue with HMC785LP4ETR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HMC785LP4ETR part is unused and in its original packaging.
Return procedure for HMC785LP4ETR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
HMC785LP4ETR Tags
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