Analog Devices Inc. HMC801LP3ETR

Overview

HMC801LP3ETR from Analog Devices (formerly Hittite Microwave) is a GaAs MMIC 1-bit digital positive-control RF attenuator operating from DC to 10 GHz, delivering 15 dB attenuation with ±0.4 dB typical step error, 2 dB typical insertion loss, +53 dBm IIP3, and TTL/CMOS-compatible single control line - ideal for microwave radio, VSAT, and WLAN IF/RF signal conditioning paths.

For engineers reviewing the HMC801LP3ETR datasheet, HMC801LP3ETR pinout, HMC801LP3ETR application, or HMC801LP3ETR equivalent, key selection criteria include broadband DC–10 GHz operation, low distortion at high input power, minimal layout dependency via external AC-ground capacitors, and compatibility with +5 V single-supply and standard SMT assembly processes.

Technical Context

The HMC801LP3ETR implements a monolithic GaAs-based switched-attenuator topology with bidirectional RF path (RF1–RF2), requiring off-chip AC-ground capacitors (ACG1/ACG2) for near-DC operation. Its single positive-control logic interface (V1) selects between reference insertion loss and 15 dB attenuation states without polarity inversion.

It operates across –40 °C to +85 °C with +5 V ±10% supply (230 µA typical I_DD), achieves <2 dB insertion loss up to 4 GHz and maintains >14 dB return loss through 10 GHz, and delivers high linearity with +53 dBm IIP3 above 0.4 GHz - enabling use in receiver front-ends and transmitter output stages where compression and intermodulation must be tightly controlled.

Key Specifications

Pinout & Package

16-lead 3×3 mm leadless surface-mount package (9 mm² footprint) with exposed ground paddle; RoHS-compliant, MSL1, matte Sn finish; requires soldering of all ground leads and paddle to PCB RF ground per Hittite land pattern guidelines.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar 1-bit digital RF attenuator applications.

Compared with HMC801LP3ETR, HMC306MS8G trades bandwidth and control simplicity for smaller footprint, while QM11036 offers lower-voltage compatibility but sacrifices 4 GHz of upper-frequency margin - making HMC801LP3ETR uniquely suited for wideband microwave infrastructure where DC–10 GHz coverage and +5 V TTL interoperability are mandatory.

Availability

HMC801LP3ETR is available at Aetrix Electronics and suitable for microwave radio, VSAT terminal, and WLAN test equipment applications requiring stable component supply, long-lifecycle support, and consistent RF performance across production batches.

Supply support for HMC801LP3ETR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Analog Devices acquired Hittite Microwave in 2014 and integrates its high-frequency RF portfolio into precision analog and RF solutions for communications, defense, and instrumentation markets.

The HMC801LP3ETR belongs to Hittite's GaAs MMIC digital attenuator product line, engineered specifically for broadband RF/IF gain control in microwave infrastructure where linearity, step accuracy, and DC coupling are critical.

FAQ

What is the operating frequency range of the HMC801LP3ETR?

The HMC801LP3ETR operates from DC to 10 GHz, supporting continuous broadband attenuation without band switching. This range covers baseband, IF (e.g., 70 MHz, 140 MHz, 700 MHz), and microwave RF bands (e.g., 2.4 GHz, 5.8 GHz, 28 GHz LO harmonics), making it suitable for both laboratory instruments and field-deployed wireless infrastructure. Performance specifications such as insertion loss and return loss are guaranteed across this full span.

Does the HMC801LP3ETR require external components to operate?

Yes, the HMC801LP3ETR requires external components: DC-blocking capacitors on RF1 and RF2 for DC isolation, AC-ground capacitors on ACG1 and ACG2 for low-frequency stability, and local bypass capacitors on Vdd. These are mandatory per the datasheet - omission causes degraded return loss below 1 GHz and potential instability. The evaluation board (P/N 121213) specifies 100 pF and 330 pF 0402 capacitors placed within 1 mm of respective pins.

What is the control logic polarity of the HMC801LP3ETR?

The HMC801LP3ETR uses positive-control TTL/CMOS logic: a V1 input of 0–0.8 V selects the insertion loss state (reference path), and 2–5 V selects the 15 dB attenuation state. No inversion or enable signals are present - it is a true single-line, non-inverting digital attenuator. This eliminates need for inverters or level shifters when interfacing with FPGAs or microcontrollers running at +5 V.

Is the HMC801LP3ETR still in active production?

The HMC801LP3ETR is marked "OBSOLETE" in the official datasheet revision v01.0610, indicating end-of-life status by Analog Devices. However, Aetrix Electronics maintains verified legacy stock with full traceability and supports design-in continuity for existing programs through last-time buy coordination and cross-reference guidance where technically viable alternatives exist.

How is thermal management handled on the HMC801LP3ETR?

The HMC801LP3ETR uses an exposed ground paddle thermally coupled to the PCB ground plane, with specified thermal resistance of 83 °C/W (channel to ground). To maintain channel temperature ≤150 °C, the PCB must incorporate ≥6 thermal vias under the paddle connected to an internal or bottom-layer solid copper ground plane. Derating begins above +85 °C ambient: power dissipation must decrease by 12 mW/°C, limiting usable RF input power at elevated temperatures.