Analog Devices Inc. HMC815BLC5

Overview

HMC815BLC5 from Analog Devices is a GaAs pHEMT monolithic microwave integrated circuit (MMIC) I/Q upconverter operating from 21 GHz to 27 GHz RF, with 10.5–14.5 GHz LO input and DC–3.75 GHz IF bandwidth. It delivers 12 dB typical conversion gain, 20 dBc sideband rejection, and +20 dBm OP1dB, enabling high-fidelity single-sideband upconversion in millimeter-wave transmitters.

For engineers reviewing the HMC815BLC5 datasheet, HMC815BLC5 pinout, HMC815BLC5 application, or HMC815BLC5 equivalent, this device is selected for E-band point-to-point radios, military radar front-ends, satellite uplink modules, and electronic warfare systems requiring compact, surface-mount SSB signal synthesis without external wire bonding.

Technical Context

The HMC815BLC5 integrates an active 2× LO multiplier, I/Q mixer core, and RF driver amplifier in a single MMIC die. Its architecture uses quadrature IF inputs (IF1/IF2) with external 90° hybrid selection to suppress unwanted sideband-eliminating need for post-upconversion filtering.

It operates with three independent drain supplies (VDD1 for LO amp; VDD2/VDD3 for RF amp) and requires external gate bias (VGG) for RF amplifier control. Thermal management relies on soldering the exposed ceramic LCC pad to a low-impedance ground plane per JEDEC 2S2P layout guidelines.

Key Specifications

Pinout & Package

Package: 4.90 mm × 4.90 mm, 32-terminal ceramic leadless chip carrier (LCC) with exposed thermal pad (RoHS compliant). Requires reflow soldering per JEDEC J-STD-020 (260°C peak).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar I/Q upconverter applications.

Compared with HMC815ALC5 and HMC1040LP5E, the HMC815BLC5 uniquely balances full E-band RF coverage (21–27 GHz), 20 dBc sideband rejection, and surface-mount manufacturability-making it the optimal choice for production-grade 70/80 GHz radio modules where spectral purity and frequency range are co-constrained.

Availability

HMC815BLC5 is available at Aetrix Electronics and suitable for point-to-point radios, military radar front-ends, and satellite communications uplinks requiring stable component supply across extended temperature (−40°C to +85°C) and high-reliability mmWave deployment.

Supply support for HMC815BLC5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Analog Devices is a global leader in high-performance analog, mixed-signal, and RF ICs, serving aerospace, defense, communications, and industrial markets with precision signal processing solutions.

The HMC815BLC5 belongs to Analog Devices' Hittite Microwave MMIC product line, engineered specifically for millimeter-wave infrastructure-emphasizing integration, repeatability, and manufacturability in E-band and Ka-band wireless systems.

FAQ

What is the operating temperature range for the HMC815BLC5?

The HMC815BLC5 operates over −40°C to +85°C ambient temperature, validated per its absolute maximum ratings and thermal resistance (θJA = 46.4°C/W). Performance curves in the datasheet (e.g., Figures 10, 13, 16) confirm stable conversion gain, sideband rejection, and OIP3 across this full range-enabling deployment in outdoor radios and airborne radar systems without derating.

Does the HMC815BLC5 require an external 90° hybrid, and why?

Yes, the HMC815BLC5 requires an external 90° hybrid at its IF1/IF2 ports to select upper or lower sideband. The device's I/Q mixer core provides inherent quadrature phase relationship, but sideband selection depends on hybrid configuration-enabling flexible high-side or low-side LO injection without redesigning the MMIC. This architecture reduces filter complexity versus image-reject mixers.

What are the recommended external components for HMC815BLC5 biasing?

Per the datasheet's typical application circuit (Figure 104), HMC815BLC5 requires: (1) 100 nF + 10 pF decoupling capacitors on VDD1, VDD2, and VDD3; (2) a low-noise adjustable voltage source for VGG (typically ~−0.5 V); (3) 50 Ω series termination on LOIN; and (4) ac-coupling capacitors (e.g., 100 pF) on IF1/IF2 if dc blocking is needed. All grounds must tie to the exposed pad.

Can the HMC815BLC5 be used for both upper and lower sideband upconversion?

Yes, the HMC815BLC5 supports both upper and lower sideband upconversion by selecting LO frequency relative to IF: high-side LO (LO = RF − IF) yields lower sideband; low-side LO (LO = RF + IF) yields upper sideband. Performance data (Figures 46–81) confirms 20 dBc sideband rejection and 12 dB gain for both configurations across 21–27 GHz RF.

What is the significance of the exposed pad on the HMC815BLC5 ceramic LCC package?

The exposed pad on the HMC815BLC5 serves dual thermal and electrical functions: it must be soldered to a low-impedance ground plane with ≥5 × 5 thermal vias to achieve θJC = 46.7°C/W and maintain junction temperature <125°C at full power. Electrical grounding of the pad also improves RF isolation (e.g., 2×LO-to-RF isolation) and minimizes ground loop inductance in mmWave layouts.