Analog Devices Inc. HMC815BLC5TR
- Part No.:
- HMC815BLC5TR
- Manufacturer:
- Analog Devices Inc.
- Category:
- RF Mixers
- Package:
- 32-TFCQFN Exposed Pad
- Datasheet:
-
HMC815BLC5TR.pdf
- Description:
- MIXER, UPCONVERTER
- Quantity:
- Payment:

- Shipping:

Inventory:1,329
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Product details
Overview
HMC815BLC5TR from Analog Devices is a GaAs MMIC I/Q upconverter operating from 21 GHz to 27 GHz RF, with 10.5–14.5 GHz LO input and DC–3.75 GHz IF bandwidth. It delivers 12 dB typical conversion gain, 20 dBc sideband rejection, and +20 dBm OP1dB, enabling high-fidelity single-sideband upconversion in millimeter-wave transmitters.
For engineers reviewing the HMC815BLC5TR datasheet, HMC815BLC5TR pinout, HMC815BLC5TR application, or HMC815BLC5TR equivalent, this device supports precise RF signal synthesis where LO harmonics, sideband purity, and wide IF bandwidth are critical-especially in military radar front-ends, satellite uplinks, and point-to-point radio systems requiring surface-mount integration without wire bonding.
Technical Context
The HMC815BLC5TR integrates an active 2× LO multiplier, I/Q mixer core, and RF driver amplifier in a single GaAs pHEMT MMIC die. Its architecture enables high-side or low-side LO injection (10.5–14.5 GHz) to generate RF output at 21–27 GHz using external 90° hybrid selection of upper or lower sideband.
It requires three independent drain supplies (VDD1 for LO amp, VDD2/VDD3 for RF amp) and gate bias (VGG) for optimal linearity. Performance is specified across −40°C to +85°C with 4.5 V supply and 4 dBm LO drive, and return loss exceeds 12 dB at RF, 15 dB at LO, and 15 dB at IF ports.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| RF Frequency Range | 21–27 GHz: Enables E-band operation for high-capacity wireless backhaul and radar imaging. |
| LO Frequency Range | 10.5–14.5 GHz: Supports high-side LO injection (×2) for clean 21–27 GHz synthesis with reduced LO filtering burden. |
| IF Bandwidth | DC–3.75 GHz: Allows baseband or wideband IF inputs including complex modulation schemes up to 3.75 GHz signal bandwidth. |
| Conversion Gain | 12 dB typical: Reduces need for post-upconversion amplification while maintaining SNR in cascaded RF chains. |
| Sideband Rejection | 20 dBc typical: Minimizes unwanted sideband energy without requiring bulky image-reject filters in SSB systems. |
| OIP3 | 27 dBm typical: Ensures robust two-tone linearity for multi-carrier or high-PAPR waveforms in satellite and radar transmitters. |
| OP1dB | +20 dBm typical: Delivers sufficient saturated output power for direct drive of antenna feed networks or PA stages. |
Pinout & Package
Package: 4.90 mm × 4.90 mm, 32-terminal ceramic LCC with exposed thermal pad (RoHS compliant). Requires low-impedance RF/dc ground connection to exposed pad and designated GND pins.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 6 | VDD1 | LO amplifier drain supply (4.5 V typical); decoupling required per Figure 3 to suppress LO ripple coupling. |
| 9 | LOIN | 50 Ω ac-coupled LO input; accepts 0–6 dBm drive; internal 2× multiplier eliminates need for external doubler. |
| 10,13,15,30,32 | GND | RF/dc ground connections; must be tied to low-inductance ground plane and exposed pad for thermal stability. |
| 12 | VGG | RF amplifier gate bias voltage; sets quiescent current and linearity; adjustable via external resistor network. |
| 14 | RFOUT | 50 Ω ac-coupled RF output; delivers upconverted 21–27 GHz signal with >12 dB return loss. |
| 18,21 | VDD3, VDD2 | RF amplifier drain supplies (4.5 V typical); separate paths minimize inter-stage supply noise coupling. |
| 29,31 | IF1, IF2 | Differential I/Q IF inputs; require external 90° hybrid to select upper or lower sideband; dc-coupled to 3 mA max sink/source. |
Key Features
| Feature | Design Value |
|---|---|
| I/Q mixer topology with integrated 2× LO multiplier | Eliminates external frequency doubler and simplifies LO chain design while preserving sideband suppression. |
| 20 dBc sideband rejection over full RF band | Reduces image filter complexity and insertion loss in SSB transmitters, improving overall link budget. |
| Exposed thermal pad + ceramic LCC package | Enables efficient heat dissipation (θJC = 46.7 °C/W) for continuous-wave operation at +85°C ambient. |
| DC–3.75 GHz IF bandwidth | Supports complex modulation formats (e.g., QAM, OFDM) and wide instantaneous bandwidth applications. |
| Surface-mount manufacturability | Replaces hybrid SSB assemblies; no wire bonding required, compatible with standard reflow processes. |
Applications
| Point-to-Point Radios | Military Radar Front-Ends |
|---|---|
Use Scenario: High-capacity E-band wireless backhaul links operating at 24 GHz with 1–2 GHz channel bandwidth. IC Role / Device Role / Timing Role: I/Q upconverter generating final RF output from baseband I/Q signals with precise sideband control. Use Value: 20 dBc sideband rejection avoids costly image-reject filtering; 12 dB gain reduces cascade noise figure. |
Use Scenario: Active electronically scanned array (AESA) radar transmit modules requiring fast frequency agility and low spurious emissions. IC Role / Device Role / Timing Role: Final-stage upconverter translating IF waveforms to 21–27 GHz for antenna element feeding. Use Value: +20 dBm OP1dB enables direct drive of T/R module outputs; wide IF bandwidth supports pulse compression waveforms. |
| Satellite Communication Uplinks | Electronic Warfare (EW) Transmitters |
Use Scenario: Ka-band uplink terminals transmitting telemetry and payload data from ground stations to LEO satellites. IC Role / Device Role / Timing Role: High-linearity upconverter converting modulated IF to 26.5–27 GHz uplink band. Use Value: 27 dBm OIP3 ensures minimal intermodulation distortion under multi-carrier conditions; DC-coupled IF supports burst-mode operation. |
Use Scenario: Jammer systems requiring rapid frequency hopping and high spectral purity across E-band. IC Role / Device Role / Timing Role: Agile upconverter generating programmable jamming signals with controlled sideband energy. Use Value: 21–27 GHz coverage matches threat radar bands; 20 dBc sideband rejection prevents unintentional out-of-band emissions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar I/Q upconverter applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| HMC815ALC5TR | Same die, but rated for 17–24 GHz RF range; lower RF upper limit and reduced sideband rejection (18 dBc typ). | Optimized for lower-frequency E-band segments; not suitable for 26–27 GHz satellite uplinks. | Select when operating below 24 GHz and cost sensitivity outweighs top-end RF performance. |
| HMC1040LP5E | Wider IF bandwidth (DC–6 GHz), higher OP1dB (+22 dBm), but narrower RF range (22–26.5 GHz) and no integrated LO doubler. | Requires external 2× LO multiplier; better for ultra-wide IF modulation but adds board area and complexity. | Choose when IF bandwidth >3.75 GHz is mandatory and external LO conditioning is acceptable. |
Compared with HMC815ALC5TR, the HMC815BLC5TR extends usable RF range by 3 GHz and improves sideband rejection by 2 dBc-critical for 26–27 GHz satellite uplinks. Versus HMC1040LP5E, it integrates the LO doubler and simplifies layout, trading 0.5 GHz RF upper limit and 0.5 GHz IF bandwidth for reduced BOM count and LO path loss.
Availability
HMC815BLC5TR is available at Aetrix Electronics and suitable for point-to-point radios, military radar front-ends, and satellite communication uplinks requiring stable component supply, RoHS-compliant packaging, and millimeter-wave upconversion performance.
Supply support for HMC815BLC5TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Analog Devices is a global leader in high-performance analog, mixed-signal, and RF ICs, serving aerospace, defense, communications, and industrial markets with precision signal processing solutions.
The HMC815BLC5TR belongs to Analog Devices' Hittite Microwave MMIC product line, engineered specifically for broadband microwave and millimeter-wave upconversion in defense and satellite systems where integration, linearity, and sideband purity are paramount.
FAQ
What is the recommended LO drive level for optimal sideband rejection in the HMC815BLC5TR?
The HMC815BLC5TR achieves its typical 20 dBc sideband rejection at 4 dBm LO drive, as specified in the datasheet under TA = 25°C and IF = 2500 MHz. Deviating below 0 dBm or above 6 dBm degrades sideband suppression-Figure 14 shows rejection dropping to ~15 dBc at 0 dBm LO. Always maintain LOIN within the 0–6 dBm absolute maximum rating to avoid damage or parametric shift.
Does the HMC815BLC5TR require external filtering on the RF output port?
The HMC815BLC5TR does not require external RF bandpass filtering to meet its specified 21–27 GHz output performance, as RF return loss exceeds 12 dB across the band and harmonic content is suppressed by the I/Q architecture. However, system-level filtering may still be needed to meet regulatory mask requirements or suppress out-of-band emissions from subsequent stages-not due to HMC815BLC5TR limitations.
Can the HMC815BLC5TR operate with DC-coupled IF inputs?
Yes-the HMC815BLC5TR supports true DC-coupled IF operation on pins IF1 and IF2, provided neither pin sources nor sinks more than ±3 mA. This enables baseband I/Q modulation without external blocking capacitors, essential for zero-IF architectures and pulsed radar waveforms. Exceeding ±3 mA risks device malfunction or permanent damage per Absolute Maximum Ratings Table 2.
What is the thermal management requirement for continuous operation of the HMC815BLC5TR at +85°C ambient?
For continuous operation at +85°C ambient, the HMC815BLC5TR requires a low-impedance thermal path from its exposed pad to a solid copper ground plane with ≥5 × 5 thermal vias (per JEDEC JESD51-2). The datasheet specifies θJA = 46.4 °C/W under natural convection; insufficient thermal design causes junction temperature to exceed 175°C maximum, triggering irreversible degradation in conversion gain and OIP3.
How does the HMC815BLC5TR achieve sideband suppression without an integrated 90° hybrid?
The HMC815BLC5TR implements an I/Q mixer core but does not integrate the 90° hybrid-it requires an external passive or active hybrid at the IF1/IF2 ports to generate the quadrature phase relationship. Sideband suppression arises from amplitude/phase balance between the I and Q paths and the precision of the external hybrid; the HMC815BLC5TR's 20 dBc rejection assumes ideal 90° phase shift and matched IF port impedances.
HMC815BLC5TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc.
- Series:
- -
- Package/Case:
- 32-TFCQFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- RF Type:
- General Purpose
- Frequency:
- 21GHz ~ 27GHz
- Number of Mixers:
- 2
- Gain:
- 12dB
- Noise Figure:
- -
- Secondary Attributes:
- Up Converter
- Current - Supply:
- 270mA
- Voltage - Supply:
- 5.5V
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 32-CLCC (5x5)
HMC815BLC5TR FAQ
1.How can I place an order for HMC815BLC5TR through Aetrix?
Please submit a Request for Quotation (RFQ) for HMC815BLC5TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HMC815BLC5TR reliable?
The price and inventory of HMC815BLC5TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HMC815BLC5TR is usually 5 days.
3.What payment methods are accepted for HMC815BLC5TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HMC815BLC5TR transactions.
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4.How is shipping managed for HMC815BLC5TR?
HMC815BLC5TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HMC815BLC5TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HMC815BLC5TR?
For technical support, including HMC815BLC5TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HMC815BLC5TR requirements.
6.How does Aetrix verify that HMC815BLC5TR is sourced from the original manufacturer or authorized distributors?
All HMC815BLC5TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HMC815BLC5TR meets industry standards.
7.What is the process for return or replacement of HMC815BLC5TR?
All HMC815BLC5TR units undergo pre-shipment inspection (PSI). If there is an issue with HMC815BLC5TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HMC815BLC5TR part is unused and in its original packaging.
Return procedure for HMC815BLC5TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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