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Analog Devices Inc. HMC-SDD112

Part No.:
HMC-SDD112
Manufacturer:
Analog Devices Inc.
Category:
RF Switches
Package:
Die
Datasheet:
AetrixHMC-SDD112.pdf
Description:
IC RF SWITCH SPDT 86GHZ DIE
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,425

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Product details

Overview

HMC-SDD112 from Analog Devices (formerly Hittite Microwave) is a GaAs PIN monolithic microwave integrated circuit (MMIC) Single-Pole Double-Throw (SPDT) switch designed for millimeter-wave signal routing in 55–86 GHz systems. It delivers 2 dB typical insertion loss, 30 dB typical isolation, and features DC-blocked RF I/Os with integrated bias decoupling. Its role is RF path selection in E-band transceivers, radar front-ends, and SATCOM modules.

For engineers reviewing the HMC-SDD112 datasheet, HMC-SDD112 pinout, HMC-SDD112 application, or HMC-SDD112 equivalent, key selection criteria include its 55–86 GHz bandwidth, shunt-switch topology, -5/+5 V dual-rail control interface, die-level form factor, and compatibility with thermosonic wirebonding and eutectic die attach in MCM/hybrid assemblies.

Technical Context

The HMC-SDD112 implements an all-shunt GaAs PIN diode architecture, eliminating series switching elements to maintain broadband impedance match and minimize dispersion across 55–86 GHz. Its on-chip DC blocking capacitors and bias decoupling networks enable direct integration without external RF chokes or bypass components.

Control logic uses complementary TTL-compatible voltages: CTLA = –5 V / CTLB = +5 V selects RFIN→RFOUT1, while CTLA = +5 V / CTLB = –5 V selects RFIN→RFOUT2. The die backside is Ti/Au metallized and grounded, requiring direct RF/DC ground connection for optimal return loss and thermal performance.

Key Specifications

Parameter Value and Actual Design Meaning
Frequency Range 55–86 GHz - Fully characterized operating band for E-band wireless and automotive radar applications.
Insertion Loss (Typ.) 2 dB - Low signal attenuation enables high-efficiency RF path switching without cascaded gain compensation.
Isolation (Typ.) 30 dB - Suppresses crosstalk between RFOUT1 and RFOUT2 paths during state transition or steady-state operation.
Return Loss (ON State) 12 dB - Ensures <–12 dB reflection at RFIN and active RFOUT under matched 50 Ω conditions.
Control Current (ON) 22 mA @ +5 V - Defines minimum driver capability required for reliable state activation.
Die Size 2.01 × 0.975 × 0.1 mm - Ultra-compact bare-die format optimized for high-density MMIC hybrid packaging.
Operating Temp. –55 °C to +85 °C - Validated performance range for deployment in automotive and outdoor infrastructure environments.

Pinout & Package

Package: Bare die (unpacked), Ti/Au metallized, gold bond pads, grounded backside. Compatible with GP-5 gel pack shipping and standard die attach methods including AuSn eutectic and conductive epoxy.

Pin/Terminal Circuit Role Design Meaning
1 RFOUT1 DC-blocked 50 Ω RF output port; active when CTLA = –5 V, CTLB = +5 V.
2, 3 CTLA, CTLB Complementary digital control inputs; drive with ±5 V rails to select RF path.
4 RFOUT2 DC-blocked 50 Ω RF output port; active when CTLA = +5 V, CTLB = –5 V.
5 RFIN DC-blocked 50 Ω RF input port; common to both SPDT paths.
Die Bottom GND RF/DC ground plane connection; mandatory for return path integrity and thermal dissipation.

Key Features

Feature Design Value
All-shunt PIN diode topology Enables broadband 55–86 GHz operation without series inductance or resonance limitations.
Integrated DC blocking Eliminates need for external series capacitors at RFIN, RFOUT1, and RFOUT2 ports.
On-chip bias decoupling Reduces external bypass capacitor count; supports stable switching with minimal layout area.
Passivated GaAs process Ensures long-term reliability under thermal cycling and humidity exposure in sealed modules.
Ti/Au bond pad metallization Supports thermocompression and thermosonic wirebonding with 1-mil gold wire and <12-mil bond length.

Applications

E-Band Point-to-Point Radio Automotive Radar Transceiver

Use Scenario: Full-duplex transceiver in FCC-licensed 71–76 GHz and 81–86 GHz backhaul links.

IC Role / Device Role / Timing Role: SPDT switch routes antenna signals between transmit and receive chains during TDD operation.

Use Value: 2 dB insertion loss preserves link budget; 30 dB isolation prevents TX leakage from desensitizing RX LNA.

Use Scenario: 77 GHz ADAS radar module with separate TX/RX antennas and beamforming arrays.

IC Role / Device Role / Timing Role: Selects between multiple antenna elements or calibration paths in real time.

Use Value: Sub-100 µs switching speed enables rapid channel calibration; die size fits tight aperture constraints.

SATCOM Terminal Front-End Millimeter-Wave Test Fixture

Use Scenario: Ka-band/E-band satellite ground terminal supporting frequency-agile uplink/downlink.

IC Role / Device Role / Timing Role: Switches between upconverter output and downconverter input within shared antenna feed network.

Use Value: DC-blocked I/Os simplify integration with active mixers; –55 °C to +85 °C rating supports outdoor deployment.

Use Scenario: Probe-based characterization setup for 60+ GHz component validation on wafer or packaged devices.

IC Role / Device Role / Timing Role: Enables sequential RF path routing to vector network analyzer ports without manual re-probing.

Use Value: Probed-die measurement data directly reflects on-wafer performance; no package parasitics distort results.

Equivalent & Alternatives

The following parts are listed as comparable options for similar millimeter-wave SPDT switch applications.

Alternative Part Technical Difference Application Difference Selection Advice
HMC1082 Wider 24–44 GHz range; higher 3.5 dB insertion loss; larger 2.5 × 1.3 mm die. Targets K-band radar and test equipment; not rated above 44 GHz. Select HMC1082 only if operating below 44 GHz and board space permits larger die.
Qorvo QM11023 57–71 GHz range; 2.8 dB insertion loss; requires external DC blocking; no integrated bias decoupling. Designed for phased-array radar with discrete bias network implementation. Choose QM11023 when external bias control and filtering are already present in system architecture.

Compared with HMC1082 and QM11023, the HMC-SDD112 uniquely combines 55–86 GHz coverage, integrated DC blocking, on-chip bias decoupling, and sub-2 dB loss-making it the only option qualified for FCC E-band communication systems requiring full 71–76/81–86 GHz operation in compact MCM layouts.

Availability

HMC-SDD112 is available at Aetrix Electronics and suitable for E-band radios, automotive radar modules, and SATCOM terminals requiring stable component supply across extended temperature ranges and high-frequency performance consistency.

Supply support for HMC-SDD112 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Analog Devices acquired Hittite Microwave in 2014 and maintains its millimeter-wave MMIC portfolio, specializing in high-frequency RF solutions for defense, aerospace, and communications infrastructure.

The HMC-SDD112 belongs to Hittite's GaAs PIN SPDT switch product line, engineered specifically for broadband millimeter-wave signal routing in E-band wireless, radar, and SATCOM systems where low loss and high isolation are critical.

FAQ

What is the absolute maximum control voltage rating for HMC-SDD112?

The HMC-SDD112 has an absolute maximum bias voltage range of –5.5 V to +5.5 Vdc per control pin. Exceeding this range risks permanent damage to the GaAs PIN diodes. Operation at –5 V / +5 V is specified for normal functionality, and transient suppression on bias lines is recommended to prevent overshoot during switching transitions.

Does HMC-SDD112 require external DC blocking capacitors?

No, the HMC-SDD112 does not require external DC blocking capacitors. All RF ports-RFIN, RFOUT1, and RFOUT2-are internally DC blocked, as confirmed by the functional diagram and pad descriptions in the official datasheet. This eliminates the need for series capacitors in the RF path.

What grounding method is required for HMC-SDD112 die bottom?

The die bottom of the HMC-SDD112 must be connected to a low-inductance RF/DC ground plane using eutectic die attach or conductive epoxy. This connection is essential for return current path integrity, thermal dissipation, and achieving the specified 12 dB ON-state return loss and 30 dB isolation.

Can HMC-SDD112 be used in pulsed RF applications?

Yes, the HMC-SDD112 supports pulsed RF operation. Its GaAs PIN diode structure enables fast switching with sub-100 ns transition times, and its –55 °C to +85 °C operating temperature range accommodates pulsed thermal profiles in radar and instrumentation systems.

What wirebonding parameters are recommended for HMC-SDD112?

HMC-SDD112 supports thermosonic ball bonding with 0.025 mm (1 mil) pure gold wire. Recommended parameters include a stage temperature of 150 °C, bonding force of 40–50 g, and bond lengths under 0.31 mm (12 mils). Wedge bonding is also supported at 18–22 g force with identical length constraints.

HMC-SDD112 Specifications

Product attributes
Attribute value
Manufacturer:
Analog Devices Inc.
Series:
-
Package/Case:
Die
Packaging:
Tray
Product Status:
Obsolete
RF Type:
Radar
Topology:
-
Circuit:
SPDT
Frequency Range:
55GHz ~ 86GHz
Isolation:
30dB
Insertion Loss:
2dB
Test Frequency:
86GHz
P1dB:
-
IIP3:
-
Features:
-
Impedance:
50Ohm
Voltage - Supply:
-
Operating Temperature:
-55°C ~ 85°C
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
Die

HMC-SDD112 FAQ

1.How can I place an order for HMC-SDD112 through Aetrix?

Please submit a Request for Quotation (RFQ) for HMC-SDD112 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for HMC-SDD112 reliable?

The price and inventory of HMC-SDD112 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HMC-SDD112 is usually 5 days.

3.What payment methods are accepted for HMC-SDD112?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HMC-SDD112 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for HMC-SDD112?

HMC-SDD112 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your HMC-SDD112 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for HMC-SDD112?

For technical support, including HMC-SDD112 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HMC-SDD112 requirements.

6.How does Aetrix verify that HMC-SDD112 is sourced from the original manufacturer or authorized distributors?

All HMC-SDD112 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HMC-SDD112 meets industry standards.

7.What is the process for return or replacement of HMC-SDD112?

All HMC-SDD112 units undergo pre-shipment inspection (PSI). If there is an issue with HMC-SDD112, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The HMC-SDD112 part is unused and in its original packaging.

Return procedure for HMC-SDD112:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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