Analog Devices Inc. HMC-SDD112-SX

Overview

HMC-SDD112-SX from Analog Devices (formerly Hittite Microwave) is a GaAs PIN monolithic microwave integrated circuit (MMIC) SPDT switch designed for millimeter-wave signal routing in 55–86 GHz systems. It delivers 2 dB typical insertion loss, 30 dB typical isolation, and features DC-blocked 50 Ω RF I/Os with integrated bias decoupling-enabling use in E-band radios and automotive radar front-ends.

For engineers reviewing the HMC-SDD112-SX datasheet, HMC-SDD112-SX pinout, HMC-SDD112-SX application, or HMC-SDD112-SX equivalent, key selection criteria include its shunt-switch architecture, -5/+5 V dual-rail control interface, die-level form factor (2.01 × 0.975 × 0.1 mm), and compatibility with thermosonic wirebonding and eutectic die attach in MCM/hybrid assemblies.

Technical Context

The HMC-SDD112-SX implements an all-shunt GaAs PIN diode topology with on-die DC blocking capacitors at all RF ports and integrated bias decoupling networks, eliminating external DC-blocking components. Its control logic uses complementary -5 V / +5 V voltage states to select RFIN→RFOUT1 or RFIN→RFOUT2 paths without requiring external level shifters.

Designed for probe-based test and hybrid microcircuit integration, the device operates over -55 °C to +85 °C with Ti/Au metallized bond pads and fully passivated PIN diodes. The grounded backside serves as RF/DC ground reference, and performance data is specified under 50 Ω probed-die conditions per v02.0309 revision.

Key Specifications

Pinout & Package

Package: Bare die (unpacked GaAs MMIC), Ti/Au metallized, gold-plated backside ground plane. Compatible with GP-5 gel pack shipping and standard die attach methods including AuSn eutectic and conductive epoxy.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar millimeter-wave SPDT switch applications.

Compared with HMC-SDD112-SX, HMC-SDD113-SX extends usable bandwidth upward but trades 2 dB isolation at 86 GHz, while QM11036 offers higher power tolerance at the cost of added external components and degraded E-band isolation-making HMC-SDD112-SX optimal for low-loss, high-isolation 55–86 GHz routing where die-level integration is critical.

Availability

HMC-SDD112-SX is available at Aetrix Electronics and suitable for E-band communication systems, automotive radar transceivers, SATCOM terminals, millimeter-wave test equipment, and sensor front-ends requiring stable component supply across high-frequency RF production programs.

Supply support for HMC-SDD112-SX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Analog Devices acquired Hittite Microwave in 2014 and maintains its millimeter-wave MMIC portfolio for defense, aerospace, and communications markets.

The HMC-SDD112-SX belongs to the Hittite GaAs PIN SPDT switch product line, engineered specifically for broadband, low-loss signal routing in 55–86 GHz E-band infrastructure and sensing applications.

FAQ

What is the operating temperature range for the HMC-SDD112-SX?

The HMC-SDD112-SX is rated for continuous operation from -55 °C to +85 °C. This range supports deployment in automotive under-hood radar modules and outdoor E-band radio enclosures. Thermal derating is not required within this span, and the device's GaAs substrate and passivated PIN diodes ensure stable RF performance across the full interval. The HMC-SDD112-SX datasheet v02.0309 specifies all electrical parameters at +25 °C, with typical behavior maintained across the operating range.

Does the HMC-SDD112-SX require external DC blocking capacitors?

No, the HMC-SDD112-SX does not require external DC blocking capacitors. All three RF ports-RFIN, RFOUT1, and RFOUT2-are internally DC blocked per the manufacturer's pad descriptions and functional diagram. This eliminates discrete capacitor placement, reduces parasitic discontinuities, and simplifies layout in tight 55–86 GHz designs. The HMC-SDD112-SX achieves this via on-die MIM capacitors integrated into each RF path.

How is the HMC-SDD112-SX controlled, and what are the voltage requirements?

The HMC-SDD112-SX uses two complementary TTL-compatible control inputs: CTLA and CTLB. To activate RFIN→RFOUT1, apply -5 V to CTLA and +5 V to CTLB; to activate RFIN→RFOUT2, reverse the voltages. Each control line draws 22 mA in the ON state and leaks only -63 nA in the OFF state. The HMC-SDD112-SX accepts bias voltages from -5.5 V to +5.5 Vdc, with absolute maximum ratings defined in the outline drawing section.

What package options are available for the HMC-SDD112-SX?

The HMC-SDD112-SX is supplied exclusively as a bare die in GP-5 gel pack format. It has no leaded or molded package variants. The die measures 2.01 × 0.975 × 0.1 mm, features Ti/Au bond pads, and requires hybrid assembly via die attach and wirebonding. Alternate packaging is not offered; users must integrate the HMC-SDD112-SX into custom substrates, MCMs, or LTCC modules using standard GaAs MMIC mounting practices.

Can the HMC-SDD112-SX be used in SATCOM applications operating at 60 GHz?

Yes, the HMC-SDD112-SX is fully specified and characterized from 55 GHz to 86 GHz, covering the entire 60 GHz unlicensed band (57–64 GHz) and Q/V-band SATCOM allocations (e.g., 55–66 GHz downlink). Measured data shows <2.2 dB insertion loss and >28 dB isolation at 60 GHz, meeting stringent SATCOM path-loss and interference rejection requirements. The HMC-SDD112-SX's DC-blocked I/Os and integrated bias network further streamline SATCOM transceiver design.