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Renesas HN58V256ATI12E
- Part No.:
- HN58V256ATI12E
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- -
- Datasheet:
-
HN58V256ATI12E.pdf
- Description:
- 256K SERIAL EEPROM
- Quantity:
- Payment:
- Shipping:
Inventory:292
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Product details
Overview
HN58V256ATI12E from Renesas Electronics is a 256-kbit (32-kword × 8-bit) parallel-interface EEPROM organized with MNOS memory cells and CMOS circuitry, operating from 2.7 V to 5.5 V, featuring 120 ns maximum access time, 10⁵ write/erase cycles in page mode, and 10-year data retention. It serves as nonvolatile program/data storage in microcontroller-based industrial control modules requiring byte- and page-level reprogramming without external high-voltage programming.
For engineers reviewing the HN58V256ATI12E datasheet, HN58V256ATI12E pinout, HN58V256ATI12E application, or HN58V256ATI12E equivalent, this device delivers deterministic 64-byte page write timing (≤10 ms), software data protection via three-byte unlock sequence, and robust noise immunity on CE/OE/WE pins (rejects <20 ns glitches), supporting reliable field updates in embedded instrumentation and telecom line cards.
Technical Context
This EEPROM implements a parallel byte-wide JEDEC-standard interface with on-chip address and data latches, enabling direct connection to 8-bit microprocessor buses without external glue logic. Its internal high-voltage generator eliminates need for external VPP, and automatic page write logic latches A6–A14 on first WE or CE falling edge to define 64-byte page boundaries.
Write operation status is confirmed via data polling (I/O7 toggling) or toggle-bit detection (I/O6 toggling), both usable without RDY/Busy pin support - which is absent in the HN58V256A series. The device uses MNOS floating-gate technology for high endurance and low standby current (110 µW max), with built-in power-on/off data protection circuits that inhibit spurious writes during supply transitions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory size | 256 kbit (32,768 × 8-bit), directly maps to 8-bit CPU data bus with no address multiplexing required |
| Access time | 120 ns max - enables full-speed read operation at ≤8.3 MHz bus clock without wait states |
| Supply voltage | 2.7 V to 5.5 V - supports single-supply operation across 3.3 V and 5 V system rails |
| Page write time | ≤10 ms - allows burst programming of up to 64 bytes per command, reducing firmware update latency |
| Endurance | 10⁵ cycles (page mode) - supports frequent field calibration data logging over product lifetime |
| Data retention | ≥10 years - ensures configuration integrity in unpowered storage for industrial deployments |
| Standby current | 110 µW max - minimizes quiescent power in always-on monitoring systems |
Pinout & Package
HN58V256ATI12E uses a 28-pin plastic TSOP (TFP-28DBV) package, lead-free compliant, with 8.0 mm × 13.4 mm footprint and 1.20 mm max height - optimized for high-density PCB layouts in space-constrained telecom and industrial modules.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A14 | Address input | 15-bit address bus accepting full 32-kword range; A0–A5 select byte within page, A6–A14 select page |
| I/O0–I/O7 | Data input/output | Bidirectional 8-bit data bus; supports read, byte write, and page write with automatic direction control |
| CE | Chip enable | Active-low chip select; latches address on falling edge during write; must be held stable during read/write cycles |
| OE | Output enable | Active-low output gate; controls data bus drive during read; high-Z when inactive to prevent bus contention |
| WE | Write enable | Active-low write strobe; latches data on rising edge; falling edge initiates address latching for page writes |
| VCC | Power supply | Primary 2.7–5.5 V supply; powers core logic, memory array, and I/O buffers |
| VSS | Ground | Reference return path for all signals and internal circuitry; requires low-impedance PCB plane |
Key Features
| Feature | Design Value |
|---|---|
| Single 3 V supply operation | Eliminates need for dual-voltage rails or charge pumps - simplifies power design in 3.3 V embedded systems |
| 64-byte page programming | Reduces firmware update time by >90% vs. byte-by-byte writes, critical for OTA configuration patches |
| Software data protection (SDP) | Prevents accidental writes via mandatory 3-byte unlock sequence (5555h/2AAAh/5555h + A0h), enhancing field reliability |
| Noise immunity on control pins | Rejects transients ≤20 ns on CE/OE/WE - avoids spurious writes from EMI or reset glitches in noisy environments |
| Data polling & toggle-bit status | Enables host CPU to poll write completion without dedicated RDY/Busy pin - essential for HN58V256A-series compatibility |
Applications
| Industrial PLC Configuration Storage | Telecom Line Card Calibration Data |
|---|---|
Use Scenario: Storing user-defined I/O mapping, PID tuning parameters, and alarm thresholds in programmable logic controllers deployed in factory automation. IC Role / Device Role / Timing Role: Nonvolatile configuration register bank accessed via 8-bit parallel bus during boot and runtime parameter updates. Use Value: Enables field reconfiguration without hardware changes; 10⁵ endurance supports daily calibration adjustments over 27 years. |
Use Scenario: Holding RF front-end gain compensation tables and temperature drift coefficients in DSLAM and optical line terminal equipment. IC Role / Device Role / Timing Role: Byte-addressable data store interfaced to DSP or microcontroller for real-time correction lookups during signal processing. Use Value: 120 ns access time ensures zero-latency coefficient reads; page write capability accelerates factory calibration uploads. |
| Medical Device Setup Profiles | Automotive Body Control Module Settings |
Use Scenario: Retaining clinician-configured therapy parameters, safety limits, and audit logs in portable infusion pumps and diagnostic monitors. IC Role / Device Role / Timing Role: Secure, tamper-resistant storage element with software lockout, accessed only during setup mode or firmware upgrade. Use Value: SDP and power-on write inhibition prevent unintended parameter corruption during battery swaps or brownout events. |
Use Scenario: Saving seat/mirror position presets, lighting preferences, and door lock behavior in vehicle body control units. IC Role / Device Role / Timing Role: Low-power nonvolatile memory mapped into MCU's peripheral address space for fast read/write during ignition cycles. Use Value: 110 µW standby current extends battery life in parked-vehicle memory retention; 10-year retention guarantees settings persist across vehicle ownership. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar EEPROM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AT28C256-15PU | 150 ns access time; 5 V only (4.5–5.5 V); no page write; 10⁴ endurance | Lacks page programming and wide-VCC support - suitable only for legacy 5 V designs with infrequent writes | Select if replacing older 5 V-only systems where timing margin allows 30 ns slower access |
| BR24T256FJ-WE2 | I²C interface; 1 MHz clock; 5 ms write cycle; 10⁶ endurance; 1.7–5.5 V | Serial interface reduces pin count but adds protocol overhead - better for low-pin-count MCUs with I²C peripherals | Choose for new designs prioritizing board area savings and higher endurance, accepting serial transaction latency |
Compared with AT28C256-15PU and BR24T256FJ-WE2, the HN58V256ATI12E uniquely balances parallel-speed access, page-write efficiency, and broad supply voltage - making it optimal for 8-bit MPU-based systems needing deterministic, high-throughput nonvolatile storage without protocol stack complexity.
Availability
HN58V256ATI12E is available at Aetrix Electronics and suitable for industrial PLCs, telecom line cards, medical device configuration storage, and automotive body control modules requiring stable component supply across extended product lifecycles.
Supply support for HN58V256ATI12E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
HN58V256ATI12E belongs to Renesas' legacy parallel EEPROM product line, designed specifically for 8-bit microprocessor systems requiring fast, reliable, and pin-compatible nonvolatile storage with minimal external components.
FAQ
What is the maximum access time specification for the HN58V256ATI12E?
The HN58V256ATI12E has a guaranteed maximum access time of 120 ns under all valid operating conditions (VCC = 2.7–5.5 V, Ta = 0–+70°C). This value applies to both address-to-output delay (tACC) and CE-to-output delay (tCE), ensuring deterministic timing for 8-bit MPU interfaces running up to 8.3 MHz without wait-state insertion. The HN58V256ATI12E meets this spec across its full voltage and temperature range.
Does the HN58V256ATI12E support page write functionality, and what is the maximum page size?
Yes, the HN58V256ATI12E supports automatic page write with a fixed page size of 64 bytes. The device latches A6–A14 on the first falling edge of WE or CE to define the page base address, then accepts up to 63 additional bytes within 30 µs of each preceding WE/CE edge. A complete 64-byte page write completes in ≤10 ms, significantly accelerating bulk data updates compared to byte-wise programming.
How does the HN58V256ATI12E indicate write completion without a RDY/Busy pin?
The HN58V256ATI12E uses two hardware-supported methods: data polling (reading I/O7, which toggles during internal write and stabilizes when complete) and toggle-bit detection (monitoring I/O6, which toggles repeatedly until write finishes). These mechanisms eliminate dependency on the RDY/Busy signal - which is exclusive to the HN58V257A series - enabling full compatibility with existing HN58V256A-based designs.
What software data protection sequence is required to enable writes on the HN58V256ATI12E?
To enable a write operation on the HN58V256ATI12E, the host must issue a three-byte unlock sequence before the target address and data: write 0xAA to address 0x5555, then 0x55 to address 0x2AAA, then 0xA0 to address 0x5555. Only after this exact sequence is completed will the subsequent write to the target address be accepted. The HN58V256ATI12E ships with software data protection disabled.
Is the HN58V256ATI12E RoHS-compliant and what package type does it use?
Yes, the HN58V256ATI12E is lead-free and RoHS-compliant, indicated by the "E" suffix in its ordering code. It uses the TFP-28DBV 28-pin plastic thin small-outline package (TSOP), measuring 8.0 mm × 13.4 mm with 0.5 mm pitch, designed for surface-mount assembly in high-density industrial and telecom PCBs.
HN58V256ATI12E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- -
- Memory Format:
- -
- Technology:
- -
- Memory Size:
- -
- Memory Organization:
- -
- Memory Interface:
- -
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
HN58V256ATI12E FAQ
1.How can I place an order for HN58V256ATI12E through Aetrix?
Please submit a Request for Quotation (RFQ) for HN58V256ATI12E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HN58V256ATI12E reliable?
The price and inventory of HN58V256ATI12E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HN58V256ATI12E is usually 5 days.
3.What payment methods are accepted for HN58V256ATI12E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HN58V256ATI12E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HN58V256ATI12E?
HN58V256ATI12E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HN58V256ATI12E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HN58V256ATI12E?
For technical support, including HN58V256ATI12E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HN58V256ATI12E requirements.
6.How does Aetrix verify that HN58V256ATI12E is sourced from the original manufacturer or authorized distributors?
All HN58V256ATI12E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HN58V256ATI12E meets industry standards.
7.What is the process for return or replacement of HN58V256ATI12E?
All HN58V256ATI12E units undergo pre-shipment inspection (PSI). If there is an issue with HN58V256ATI12E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HN58V256ATI12E part is unused and in its original packaging.
Return procedure for HN58V256ATI12E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
HN58V256ATI12E Tags
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