Renesas HN58V65AT10E

Overview

HN58V65AT10E from Renesas Electronics is a 64-kbit (8-kword × 8-bit) parallel EEPROM organized as 8192 × 8, fabricated with MNOS memory technology and CMOS circuitry. It operates from 2.7 V to 5.5 V, delivers 100 ns access time at 2.7–4.5 V and 70 ns at 4.5–5.5 V, supports 64-byte page write (10 ms max), and features Ready/Busy output and data polling for embedded system configuration storage.

For engineers reviewing the HN58V65AT10E datasheet, HN58V65AT10E pinout, HN58V65AT10E application, or HN58V65AT10E equivalent, this device serves as a nonvolatile memory solution in industrial control modules, legacy microcontroller-based instrumentation, and firmware parameter storage where byte- and page-level reprogrammability, low-voltage operation, and JEDEC-compliant parallel interface are required.

Technical Context

The HN58V65AT10E implements a parallel asynchronous interface with CE/OE/WE control logic and on-chip address/data latches. Its internal architecture includes X/Y decoders, high-voltage generator, and timing control logic enabling automatic byte and page programming without external high-voltage supply.

It supports two write modes - byte write (10 ms max) and page write (64 bytes in ≤10 ms) - with built-in data protection via power-on/off noise filtering, software data protection (SDP), and hardware-level write inhibit during unstable VCC transitions. The RDY/Busy pin and I/O7 data polling provide real-time status feedback during internal write cycles.

Key Specifications

Pinout & Package

HN58V65AT10E uses a 28-pin plastic TSOP (TFP-28DBV) package, 13.4 mm × 8.2 mm × 1.2 mm, lead-free compliant, with gull-wing leads and JEITA-standard footprint.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar EEPROM applications.

Compared with AT28C64B-15PU and FM24CL64-G, the HN58V65AT10E provides faster access, integrated status signaling, and JEDEC-compliant parallel interface - making it optimal for retrofitting legacy 8-bit systems requiring minimal firmware or PCB change while maintaining robust nonvolatile storage.

Availability

HN58V65AT10E is available at Aetrix Electronics and suitable for industrial control systems, legacy test instrumentation, embedded printer subsystems, and medical diagnostic devices requiring stable component supply across extended production lifecycles.

Supply support for HN58V65AT10E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and IoT applications.

The HN58V65A series was designed as a JEDEC-standard parallel EEPROM targeting cost-sensitive, high-reliability embedded systems requiring field-upgradable configuration storage without external high-voltage programming.

FAQ

What is the maximum operating voltage for HN58V65AT10E?

HN58V65AT10E supports a maximum supply voltage of +5.5 V. Operation above this level risks permanent damage to the MNOS memory cells and CMOS peripheral circuitry. The absolute maximum rating is +7.0 V, but sustained operation beyond +5.5 V violates the recommended DC operating conditions and voids reliability guarantees. Always use a regulated 5.5 V or lower supply with appropriate decoupling.

Does HN58V65AT10E support page write functionality?

Yes, HN58V65AT10E supports 64-byte page write with a maximum internal write time of 10 ms. This feature allows sequential data within a 64-byte boundary to be loaded with single-byte timing and committed atomically. Page write is initiated automatically after 100 µs of CE or WE high time following the last byte load, eliminating need for external timing control in host firmware.

How does the RDY/Busy pin function on HN58V65AT10E?

The RDY/Busy pin on HN58V65AT10E is an open-drain output that goes low at the start of any internal write cycle (byte or page) and returns to high-impedance upon completion. It provides hardware-level status signaling - unlike data polling - allowing the host microcontroller to wait asynchronously without reading I/O7. Pull-up resistor (typically 4.7 kΩ to VCC) is required for proper logic-level interpretation.

Is software data protection enabled by default on HN58V65AT10E?

No, software data protection (SDP) is disabled at shipment. To enable it, the host must issue the three-byte unlock sequence (address 0x555 → data 0xAA, address 0x2AA → data 0x55, address 0x555 → data 0xA0) before any subsequent write. Once enabled, all writes require re-execution of the unlock sequence. SDP remains active through power cycles unless explicitly disabled using the six-byte disable sequence.

What package type is used for HN58V65AT10E?

HN58V65AT10E uses a 28-pin plastic TSOP (Thin Small Outline Package) with JEITA code TFP-28DBV. It measures 13.4 mm × 8.2 mm × 1.2 mm, features gull-wing leads, and is lead-free compliant. This surface-mount package is optimized for high-density PCB layouts and reflow soldering, replacing older DIP and SOP variants in space-constrained embedded designs.