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Renesas HN58V65AT10SRE

Part No.:
HN58V65AT10SRE
Manufacturer:
Renesas
Category:
Memory
Package:
-
Datasheet:
AetrixHN58V65AT10SRE.pdf
Description:
64K EEPROM (8KWORD X 8-BIT)
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Shipping:
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Inventory:6,935

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Product details

Overview

HN58V65AT10SRE from Renesas Electronics is a 64-kbit (8-kword × 8-bit) parallel EEPROM organized with MNOS memory cells and CMOS circuitry, supporting single-supply operation from 2.7 V to 5.5 V, 100 ns access time at 2.7–4.5 V, and Ready/Busy status signaling. It delivers high reliability for nonvolatile data storage in industrial control modules requiring frequent firmware parameter updates.

For engineers reviewing the HN58V65AT10SRE datasheet, HN58V65AT10SRE pinout, HN58V65AT10SRE application, or HN58V65AT10SRE equivalent, key selection criteria include its −20°C to +85°C operating range, 64-byte page write capability, software data protection sequence, RDY/Busy output timing, and TSOP-28 package compatibility with legacy 28-pin parallel memory footprints.

Technical Context

This device implements byte- and page-write operations using edge-triggered address latching on WE or CE falling edges, with automatic internal write completion within 10 ms. Data polling via I/O7 and toggle-bit detection on I/O6 provide real-time write-status feedback without external timing dependencies.

The HN58V65AT10SRE belongs to the HN58V65A-SR series and lacks the RES reset pin found in HN58V66A variants-its data protection relies solely on software command sequences and noise immunity on control pins (CE/OE/WE), with hardware write inhibit achieved by holding CE high or OE low during power transitions.

Key Specifications

Parameter Value and Actual Design Meaning
Memory size64 kbit (8,192 × 8-bit), sufficient for storing configuration tables or calibration data in microcontroller-based systems
Supply voltage2.7 V to 5.5 V - supports direct interface with 3.3 V and 5 V logic families without level shifting
Access time100 ns max at 2.7–4.5 V; 70 ns max at 4.5–5.5 V - enables integration into fast 8-bit bus architectures
Write cycle time10 ms max per byte or 64-byte page - deterministic timing simplifies firmware wait-state implementation
Data retention10 years minimum after ≤10⁴ page-program cycles - ensures long-term validity of stored parameters in unattended equipment
Endurance10⁵ erase/write cycles in page mode - suitable for applications requiring daily reconfiguration over 27 years
Operating temperature−20°C to +85°C - qualified for commercial and extended-industrial environments, excluding automotive-grade extremes

Pinout & Package

HN58V65AT10SRE uses a 28-pin plastic TSOP (TFP-28DB) package, 8.0 mm × 13.4 mm footprint, 1.2 mm max height, lead-free compliant. Pinout matches JEDEC-standard parallel EEPROM layout.

Pin/Terminal Circuit Role Design Meaning
A0–A12Address input13-bit address bus supporting full 8-kword addressing; A6–A12 serve as page address bits latched on first WE/CE edge
I/O0–I/O7Data input/outputBidirectional 8-bit data bus; I/O7 used for data polling, I/O6 for toggle-bit status indication during writes
CEChip enableActive-low chip select; must be held low for read/write; high state places device in standby (110 µW max)
OEOutput enableActive-low output control; disables data bus drivers when high, enabling bus sharing
WEWrite enableActive-low write strobe; falling edge latches address and initiates byte/page programming sequence
RDY/BusyStatus outputOpen-drain signal pulled low during internal write; high-impedance otherwise - allows wired-OR monitoring
VCCPower supply2.7–5.5 V main supply; decoupling capacitor required near pin for noise immunity during write transitions
VSSGroundReference return path; requires low-impedance connection to system ground plane
NCNo connectionPin 3 is unconnected; must remain floating - no external tie required

Key Features

Feature Design Value
64-byte page writeReduces firmware overhead by enabling burst writes up to 64 bytes with single command initiation and 10 ms total latency
Software data protectionPrevents accidental writes via 3-byte unlock sequence (AAh→55h→A0h at specific addresses), eliminating need for external hardware write protect
RDY/Busy and data pollingProvides two independent, pin-compatible methods to detect write completion - simplifies host driver development across diverse MCU platforms
Noise immunity on control linesRejects transients ≤15 ns on CE/OE/WE, preventing spurious writes during EMI events or power-up sequencing
On-chip address/data latchesEliminates need for external bus latches in microprocessor systems, reducing BOM count and PCB area

Applications

Industrial PLC Configuration Storage Medical Device Calibration Data

Use Scenario: Storing I/O mapping, scaling factors, and alarm thresholds in programmable logic controllers deployed in factory automation cabinets.

IC Role / Device Role / Timing Role: Nonvolatile parameter store accessed via 8-bit parallel bus during boot and runtime reconfiguration; RDY/Busy synchronizes writes with scan cycle timing.

Use Value: Enables field-updatable configuration without firmware reflashing; 10-year data retention ensures settings persist through multi-year maintenance intervals.

Use Scenario: Holding sensor offset/gain coefficients and patient-specific therapy profiles in portable infusion pumps and diagnostic monitors.

IC Role / Device Role / Timing Role: Secure, low-power EEPROM interfaced to ARM Cortex-M microcontrollers; software protection prevents corruption during battery-swapping events.

Use Value: Guarantees traceable calibration history across device lifetimes; page-write speed minimizes treatment interruption during profile updates.

Point-of-Sale Terminal Settings Telecom Line Card Firmware Parameters

Use Scenario: Retaining tax rate tables, receipt formatting rules, and merchant ID credentials in retail terminals operating in ambient temperatures up to 85°C.

IC Role / Device Role / Timing Role: Parallel EEPROM directly mapped into microcontroller address space; operates reliably across −20°C to +85°C without thermal derating.

Use Value: Eliminates reliance on battery-backed SRAM; 10⁵ endurance supports daily parameter changes over 27+ years of service life.

Use Scenario: Storing DSP coefficient sets, channel equalization profiles, and fault-log counters in carrier-grade DSLAM line cards.

IC Role / Device Role / Timing Role: High-reliability memory co-located with TI C6000 DSPs; RDY/Busy signal integrates with DMA controller handshaking logic.

Use Value: Ensures zero-downtime profile switching during live traffic; 100 ns access time meets tight real-time processing deadlines.

Equivalent & Alternatives

The following parts are listed as comparable options for similar parallel EEPROM applications.

Alternative Part Technical Difference Application Difference Selection Advice
AT28C64B-15PU5 V only (4.5–5.5 V); 150 ns access; no RDY/Busy pin; 100 k-cycle enduranceLacks hardware status signaling; requires polling-only firmware design; narrower voltage range limits mixed-voltage system useChoose when cost sensitivity outweighs timing and status-feature requirements in 5 V-only designs
FM24CL64-GI²C interface; 400 kHz clock; 3.3 V operation; no page write; 10¹⁴ enduranceSerial interface reduces pin count but increases write latency; no parallel bus compatibility; ultra-high endurance suits logging applicationsPrefer for space-constrained designs where serial interface and extreme endurance justify slower write throughput

Compared with AT28C64B-15PU and FM24CL64-G, the HN58V65AT10SRE uniquely balances parallel-speed access, hardware-ready signaling, wide-voltage operation, and page-write efficiency-making it optimal for legacy 8-bit bus upgrades where deterministic timing and minimal firmware changes are critical.

Availability

HN58V65AT10SRE is available at Aetrix Electronics and suitable for industrial control systems, medical instrumentation, and point-of-sale terminals requiring stable component supply with guaranteed long-term availability and RoHS-compliant packaging.

Supply support for HN58V65AT10SRE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.

The HN58V65AT10SRE belongs to Renesas' legacy parallel EEPROM product line, engineered for robustness in industrial environments where deterministic timing, noise immunity, and long-term data integrity are essential.

FAQ

What is the operating temperature range for the HN58V65AT10SRE?

The HN58V65AT10SRE is rated for operation from −20°C to +85°C. This defines its qualification as an extended-commercial grade device, suitable for indoor industrial equipment and consumer electronics but not for automotive under-hood or military applications requiring wider ranges. The HN58V65AT10SRE datasheet specifies this range explicitly in the Recommended DC Operating Conditions table on page 6.

Does the HN58V65AT10SRE support hardware write protection via a RES pin?

No, the HN58V65AT10SRE does not include a RES (reset) pin. That feature is exclusive to the HN58V66A-series variants, as confirmed in the Pin Description table (page 4) and Functional Description section (page 19). The HN58V65AT10SRE relies entirely on software data protection (3-byte unlock sequence) and proper control-pin biasing during power transitions for write inhibition.

How does the RDY/Busy signal function on the HN58V65AT10SRE?

The RDY/Busy pin on the HN58V65AT10SRE is an open-drain output that pulls low during internal write operations and returns to high-impedance afterward. It is electrically compatible with standard TTL/CMOS logic and can be wire-OR'd with other status signals. The HN58V65AT10SRE datasheet confirms its behavior in the Operation Table (page 5) and Functional Description (page 19).

What package type is used by the HN58V65AT10SRE?

The HN58V65AT10SRE uses a 28-pin plastic TSOP (Thin Small Outline Package) designated TFP-28DB, measuring 8.0 mm × 13.4 mm with a maximum height of 1.2 mm. Package dimensions are documented on page 26 of the datasheet, and the "SRE" suffix in the part number explicitly denotes the lead-free TSOP variant.

Can the HN58V65AT10SRE perform page writes, and what is the maximum page size?

Yes, the HN58V65AT10SRE supports automatic page writes of up to 64 bytes per command, as stated in the Features section (page 1) and detailed in the Functional Description (page 19). Each page write completes internally within 10 ms, and successive bytes must be loaded within 30 µs of the prior WE or CE falling edge to remain in page mode.

HN58V65AT10SRE Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
*
Package/Case:
-
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
-
Memory Format:
-
Technology:
-
Memory Size:
-
Memory Organization:
-
Memory Interface:
-
Clock Frequency:
-
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-

HN58V65AT10SRE FAQ

1.How can I place an order for HN58V65AT10SRE through Aetrix?

Please submit a Request for Quotation (RFQ) for HN58V65AT10SRE on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for HN58V65AT10SRE reliable?

The price and inventory of HN58V65AT10SRE are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HN58V65AT10SRE is usually 5 days.

3.What payment methods are accepted for HN58V65AT10SRE?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HN58V65AT10SRE transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for HN58V65AT10SRE?

HN58V65AT10SRE orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your HN58V65AT10SRE order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for HN58V65AT10SRE?

For technical support, including HN58V65AT10SRE datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HN58V65AT10SRE requirements.

6.How does Aetrix verify that HN58V65AT10SRE is sourced from the original manufacturer or authorized distributors?

All HN58V65AT10SRE products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HN58V65AT10SRE meets industry standards.

7.What is the process for return or replacement of HN58V65AT10SRE?

All HN58V65AT10SRE units undergo pre-shipment inspection (PSI). If there is an issue with HN58V65AT10SRE, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The HN58V65AT10SRE part is unused and in its original packaging.

Return procedure for HN58V65AT10SRE:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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