Renesas HN58V65ATI10E
- Part No.:
- HN58V65ATI10E
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- -
- Datasheet:
-
HN58V65ATI10E.pdf
- Description:
- 64K EEPROM (8KWORD X 8-BIT)
- Quantity:
- Payment:

- Shipping:

Inventory:14,293
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
HN58V65ATI10E from Renesas Electronics is a 64-kbit (8-kword × 8-bit) parallel EEPROM organized with MNOS memory cells and CMOS circuitry, supporting 2.7–5.5 V single-supply operation, 100 ns access time at 2.7–4.5 V, and 70 ns at 4.5–5.5 V. It delivers 10⁵ erase/write cycles in page mode, 10-year data retention, and operates across −40°C to +85°C - used for firmware storage and configuration data backup in industrial control modules.
For engineers reviewing the HN58V65ATI10E datasheet, HN58V65ATI10E pinout, HN58V65ATI10E application, or HN58V65ATI10E equivalent, key selection criteria include its TSOP-28 package, RDY/Busy signaling, software data protection sequence (AA/55/A0), 64-byte page write capability, and compatibility with JEDEC byte-wide standard interfaces.
Technical Context
The HN58V65ATI10E implements a parallel byte-wide interface with address latching on CE or WE falling edges and data latching on rising edges. Its internal architecture includes on-chip address/data latches, high-voltage generator for programming, and dual-mode write control (CE- or WE-controlled).
It supports three status-monitoring methods: RDY/Busy pin output (active-low during write), data polling via I/O7 inversion, and toggle-bit detection on I/O6 - enabling flexible host synchronization without fixed timing delays. Software data protection requires a 3-byte unlock sequence before write operations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory size | 64 kbit (8,192 × 8-bit), sufficient for boot code or calibration tables in microcontroller-based systems |
| Access time | 100 ns max at 2.7–4.5 V; 70 ns max at 4.5–5.5 V - enables direct interfacing with 10 MHz bus systems |
| Write cycle time | 10 ms max per byte or 64-byte page - deterministic timing for host firmware timeout handling |
| Data retention | 10 years minimum after ≤10⁴ page-program cycles - meets long-life industrial equipment requirements |
| Endurance | 10⁵ erase/write cycles in page mode - supports frequent field-upgrade scenarios |
| Supply voltage | 2.7–5.5 V single supply - interoperable with 3.3 V and 5 V logic families without level translation |
| Operating temperature | −40°C to +85°C - qualified for industrial-grade embedded applications |
Pinout & Package
HN58V65ATI10E uses a 28-pin plastic TSOP (TFP-28DBV) package, 8.0 mm × 13.4 mm footprint, 1.2 mm max height, lead-free compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A12 | Address input | 13-bit address bus for full 8-kword addressing; A6–A12 serve as page address latch points |
| I/O0–I/O7 | Data input/output | Bi-directional 8-bit data bus; I/O7 used for data polling, I/O6 for toggle-bit status monitoring |
| CE | Chip enable | Active-low chip select; falling edge latches address, rising edge latches data in CE-controlled write mode |
| OE | Output enable | Active-low read control; enables data output only when CE is also low |
| WE | Write enable | Active-low write control; falling edge latches address, rising edge latches data in WE-controlled write mode |
| RDY/Busy | Ready/Busy indicator | Open-drain output pulled low during internal write; high-impedance otherwise - allows wired-OR status sharing |
| VCC / VSS | Power / Ground | Single 2.7–5.5 V supply; decoupling required within 10 mm of pins per JEDEC guidelines |
| NC | No connection | Pin 3 is unconnected; must be left floating or tied to VSS per layout best practice |
Key Features
| Feature | Design Value |
|---|---|
| 64-byte page write | Reduces firmware update time by up to 64× vs. byte writes - critical for field OTA updates |
| RDY/Busy + data polling + toggle bit | Three independent status reporting methods allow host MCU to choose optimal synchronization strategy |
| Software data protection | 3-byte unlock sequence (1555h/AAh → 0AAAh/55h → 1555h/A0h) prevents accidental writes during power transients |
| Data protection on power on/off | Hardware circuitry inhibits write initiation during VCC ramp-up/down - eliminates need for external reset supervision |
| JEDEC byte-wide standard compliance | Ensures drop-in compatibility with legacy 28-pin parallel EEPROM designs and socketed test fixtures |
Applications
| Industrial PLC Configuration Storage | Medical Device Calibration Data Backup |
|---|---|
Use Scenario: Storing I/O mapping, PID tuning parameters, and alarm thresholds in programmable logic controllers deployed in factory automation environments. IC Role / Device Role / Timing Role: Nonvolatile configuration memory accessed via 8-bit parallel bus during system boot and runtime parameter adjustment. Use Value: 10⁵ endurance and −40°C to +85°C rating ensure reliable reprogramming over 10+ years of continuous operation in harsh electrical noise environments. |
Use Scenario: Retaining sensor calibration coefficients, user preferences, and audit logs in portable diagnostic equipment requiring FDA-compliant data integrity. IC Role / Device Role / Timing Role: Secure, tamper-resistant storage element with software lock and power-fail write inhibition. Use Value: Data polling and RDY/Busy signaling enable deterministic write completion detection - essential for meeting IEC 62304 software lifecycle requirements. |
| Automotive Body Control Module (BCM) | Telecom Line Card Firmware Storage |
Use Scenario: Holding seat/mirror position presets, lighting profiles, and CAN node configuration in automotive BCMs operating under wide ambient temperature swings. IC Role / Device Role / Timing Role: Parallel EEPROM interfaced directly to 8-bit microcontroller bus for low-latency configuration reads during wake-up sequences. Use Value: 10-year data retention and 10⁵ cycle endurance support lifetime vehicle usage without degradation - validated per AEC-Q100 stress test conditions. |
Use Scenario: Storing boot loader images, FPGA configuration bitstreams, and hardware revision identifiers on carrier-grade line cards with hot-swap capability. IC Role / Device Role / Timing Role: High-reliability nonvolatile memory accessed during power-on self-test and firmware recovery routines. Use Value: TSOP-28 package enables compact PCB layout; 70 ns access at 5 V supports fast initialization sequences in multi-GHz backplane systems. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar parallel EEPROM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AT28C64B-15PU | 150 ns access time; 5 V only (4.5–5.5 V); no RDY/Busy pin; 10⁴ endurance | Lacks status signaling and wide-VCC support - requires polling-only host logic and external voltage regulation | Choose for cost-sensitive 5 V-only legacy designs where timing margin exists and status feedback is unnecessary |
| BR24T64FJ-WE2 | I²C interface; 1 MHz clock; 1.7–5.5 V; 10⁶ endurance; no page write | Serial interface reduces pin count but increases write latency; incompatible with parallel bus architectures | Prefer for space-constrained designs with existing I²C infrastructure and lower write-frequency requirements |
Compared with AT28C64B-15PU and BR24T64FJ-WE2, the HN58V65ATI10E uniquely combines parallel-speed access, multi-voltage operation, integrated status signaling, and page-write acceleration - making it optimal for real-time industrial hosts needing deterministic, high-cycle-count nonvolatile storage.
Availability
HN58V65ATI10E is available at Aetrix Electronics and suitable for industrial control systems, medical diagnostics equipment, and automotive body electronics requiring stable component supply across extended temperature ranges and long product lifecycles.
Supply support for HN58V65ATI10E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The HN58V65ATI10E belongs to Renesas' legacy parallel EEPROM product line, designed specifically for high-reliability, pin-compatible replacement of aging EPROM and EEPROM devices in established industrial and telecom platforms.
FAQ
What is the maximum write speed supported by the HN58V65ATI10E?
The HN58V65ATI10E supports 64-byte page writes completing in ≤10 ms, achieving an effective throughput of 6.4 kB/s. Byte writes also complete within 10 ms. This performance is guaranteed across the full 2.7–5.5 V supply range and −40°C to +85°C temperature span, with no derating required. The HN58V65ATI10E achieves this using on-chip address/data latches and optimized MNOS cell programming.
Does the HN58V65ATI10E support both CE-controlled and WE-controlled write modes?
Yes, the HN58V65ATI10E supports two distinct write control protocols: CE-controlled (where CE falling edge latches address and CE rising edge latches data) and WE-controlled (where WE falling edge latches address and WE rising edge latches data). Both modes are fully documented in the AC characteristics tables and timing waveforms of the HN58V65ATI10E datasheet, enabling flexible integration with diverse microcontroller bus timing constraints.
How does software data protection work on the HN58V65ATI10E?
Software data protection on the HN58V65ATI10E requires a precise 3-byte unlock sequence: write 0xAA to address 0x5555, then 0x55 to address 0x2AAA, then 0xA0 to address 0x5555. Only after this sequence can subsequent writes succeed. The HN58V65ATI10E exits protection mode automatically after power-on reset, and the feature is disabled at shipment. No hardware RES pin is present on the HN58V65ATI10E variant.
Is the HN58V65ATI10E pin-compatible with older 28-pin parallel EEPROMs?
Yes, the HN58V65ATI10E uses the JEDEC-standard 28-pin TSOP (TFP-28DBV) footprint and matches the pinout of industry-standard 64-kbit parallel EEPROMs including the AT28C64B and X28C64. Address (A0–A12), data (I/O0–I/O7), and control (CE/OE/WE/RDY/Busy/VCC/VSS) signals occupy identical positions, enabling direct PCB-level replacement without layout modification.
What are the key reliability specifications of the HN58V65ATI10E?
The HN58V65ATI10E guarantees 10⁵ erase/write cycles in page mode and 10 years of data retention when programmed ≤10⁴ times. It meets JEDEC standards for input leakage (<2 µA), output leakage (<2 µA), and withstands absolute maximum ratings including −0.6 V to +7.0 V on VCC and −0.5 V to +7.0 V on inputs. These specs are validated across −40°C to +85°C operation, confirming suitability for mission-critical industrial deployments.
HN58V65ATI10E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- -
- Memory Format:
- -
- Technology:
- -
- Memory Size:
- -
- Memory Organization:
- -
- Memory Interface:
- -
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
HN58V65ATI10E FAQ
1.How can I place an order for HN58V65ATI10E through Aetrix?
Please submit a Request for Quotation (RFQ) for HN58V65ATI10E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HN58V65ATI10E reliable?
The price and inventory of HN58V65ATI10E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HN58V65ATI10E is usually 5 days.
3.What payment methods are accepted for HN58V65ATI10E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HN58V65ATI10E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HN58V65ATI10E?
HN58V65ATI10E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HN58V65ATI10E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HN58V65ATI10E?
For technical support, including HN58V65ATI10E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HN58V65ATI10E requirements.
6.How does Aetrix verify that HN58V65ATI10E is sourced from the original manufacturer or authorized distributors?
All HN58V65ATI10E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HN58V65ATI10E meets industry standards.
7.What is the process for return or replacement of HN58V65ATI10E?
All HN58V65ATI10E units undergo pre-shipment inspection (PSI). If there is an issue with HN58V65ATI10E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HN58V65ATI10E part is unused and in its original packaging.
Return procedure for HN58V65ATI10E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
HN58V65ATI10E Tags

-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology

-
AT21CS01-STUM10-T
Microchip Technology

-
AT24C02C-SSHM-T
Microchip Technology

-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics

-
AT24CS02-SSHM-T
Microchip Technology

-
93LC46BT-I/OT
Microchip Technology

-
AT24C04C-SSHM-T
Microchip Technology

-
24LC01BT-I/SN
Microchip Technology

-
24AA02UIDT-I/OT
Microchip Technology

-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

