Renesas HN58V66AP10E

Overview

HN58V66AP10E from Renesas Technology is a 64-kbit (8-kword × 8-bit) parallel EEPROM with Ready/Busy and RES reset protection functions, operating across 2.7–5.5 V supply and supporting −40°C to +85°C industrial temperature range. It features 100 ns max access time at 2.7–4.5 V, 64-byte page write capability (10 ms max), and software data protection - deployed in embedded control modules requiring nonvolatile parameter storage with power-cycle resilience.

For engineers reviewing the HN58V66AP10E datasheet, HN58V66AP10E pinout, HN58V66AP10E application, or HN58V66AP10E equivalent, key selection considerations include RES-enabled hardware write inhibit, JEDEC-compliant byte-wide interface timing, RDY/Busy status signaling for asynchronous write completion detection, and compatibility with legacy 28-pin DIP-based microcontroller bus architectures.

Technical Context

The HN58V66AP10E implements a CMOS/MNOS hybrid memory architecture enabling 10⁵ erase/write cycles in page mode and 10-year data retention. Its control logic supports dual write initiation methods (WE- or CE-controlled), automatic address/data latching on falling edges, and internal high-voltage generation for programming without external VPP.

It integrates on-chip address/data/CE/OE/WE latches, data polling via I/O7 inversion, toggle-bit verification on I/O6, and noise-immune control pin filtering (<15 ns rejection). The RES pin provides hardware-level write/read inhibition during power transitions - a feature exclusive to the HN58V66A series and absent in HN58V65A variants.

Key Specifications

Pinout & Package

HN58V66AP10E uses a 28-pin dual in-line package (DP-28V) with 0.6-inch width, 2.54 mm pitch, and lead-free finish. Pin 1 is located at bottom-left corner when notch faces up.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar EEPROM applications.

Compared with AT28C64B-15PU and FM24CL64-G, the HN58V66AP10E uniquely combines RES-based hardware write inhibit, JEDEC-compliant parallel timing, and industrial temperature support - making it irreplaceable in retrofitting legacy 28-pin DIP-based systems requiring robust power-cycle immunity.

Availability

HN58V66AP10E is available at Aetrix Electronics and suitable for industrial PLC configuration storage, medical device calibration data retention, and telecom line card firmware patching requiring stable component supply across extended product lifecycles.

Supply support for HN58V66AP10E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Technology Corp. (now part of Renesas Electronics Corporation) is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, and memory solutions for industrial and automotive markets.

The HN58V66AP10E belongs to Renesas' legacy parallel EEPROM product line, designed specifically for reliable nonvolatile storage in resource-constrained embedded systems with strict power sequencing and long-term data integrity requirements.

FAQ

What is the function of the RES pin on the HN58V66AP10E?

The RES pin on the HN58V66AP10E is an active-low hardware reset input that disables all read and write operations when pulled low. It ensures data integrity during power-on/off transitions by placing the device in an unprogrammable state - a feature exclusive to the HN58V66A series and not present in HN58V65A variants. For reliable operation, RES must be held low until VCC stabilizes, then driven high for ≥10 ms before initiating any access to the HN58V66AP10E.

Does the HN58V66AP10E support both byte and page write modes?

Yes, the HN58V66AP10E supports both byte and 64-byte page write modes. Byte writes complete in ≤10 ms, while page writes (1–64 bytes) also require ≤10 ms total - significantly accelerating bulk updates. Page writes require A6–A12 to remain stable during the sequence, and each subsequent byte must be loaded within 30 µs of the prior WE or CE falling edge. The HN58V66AP10E automatically detects page boundaries and executes internal programming upon CE or WE high hold (>100 µs).

How does the RDY/Busy pin operate on the HN58V66AP10E?

The RDY/Busy pin on the HN58V66AP10E is an open-drain output that goes low (VOL) at the start of any internal write operation and returns to high-impedance upon completion. It eliminates the need for fixed delay loops or data polling: host systems can wait for RDY/Busy to go high before issuing the next command. This behavior is electrically identical across all HN58V66A-series variants, including the HN58V66AP10E, and works independently of software data protection status.

Is the HN58V66AP10E pin-compatible with other members of the HN58V66A family?

Yes, the HN58V66AP10E is pin-compatible with all HN58V66A-series devices in the DP-28/DP-28V package, including HN58V66API-10 and HN58V66API-10E. All share identical pinout, electrical characteristics, and timing - differing only in lead-free compliance (E suffix) and minor packaging tolerances. However, it is not pin-compatible with HN58V65A-series parts due to NC vs. RES pin assignment at pin 3, nor with SOP or TSOP variants despite identical logic functionality.

What is the maximum operating frequency supported by the HN58V66AP10E interface?

The HN58V66AP10E does not specify a maximum clock frequency because it is an asynchronous parallel EEPROM - it has no internal clock input. Instead, its timing is governed by setup/hold requirements relative to CE, OE, and WE signals. At 5.5 V, it supports read cycles with tACC ≤ 70 ns, enabling reliable operation with 10–14 MHz microcontroller bus clocks when proper timing margins are observed. Write cycles are self-timed (≤10 ms) and do not depend on external clock rate.