Renesas HN58X24512FPI#S0

Overview

HN58X24512FPI#S0 from Renesas Technology is a 512-kbit (64-kword × 8-bit) two-wire serial EEPROM with I²C-compatible interface, 1.8 V to 5.5 V single-supply operation, and 128-byte page write capability. It delivers low-power standby current (3 µA max), supports up to 1 MHz clock at 2.5–5.5 V, and operates across −40°C to +85°C for embedded consumer electronics storage.

For engineers reviewing the HN58X24512FPI#S0 datasheet, HN58X24512FPI#S0 pinout, HN58X24512FPI#S0 application, or HN58X24512FPI#S0 equivalent, key selection criteria include its I²C timing compliance (400 kHz/1 MHz), write endurance (10⁵ cycles), data retention (10 years), SOP-8 package footprint, and WP pin-based hardware write protection.

Technical Context

This EEPROM implements a two-wire I²C serial bus interface with fixed device code "1010", supporting up to four devices on one bus via A0/A1 address pins. It uses MNOS memory technology with CMOS process for high reliability and low-voltage operation.

The device features automatic page write (128 bytes per cycle), acknowledge polling for write-cycle status detection, and noise suppression (50 ns) on SCL/SDA inputs. Its open-drain SDA output requires external pull-up, and internal VSS pull-downs on A0, A1, and WP ensure defined logic states when unconnected.

Key Specifications

Pinout & Package

HN58X24512FPI#S0 is housed in an 8-pin SOP package (FP-8DF, 200 mil width, 1.27 mm pitch), with standard JEDEC MS-012AC dimensions and lead-free option available.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial EEPROM applications.

Compared with AT24C512B-PU and M95512-WMN6TP, HN58X24512FPI#S0 uniquely supports full 400 kHz I²C operation down to 1.8 V and includes hardware WP-making it optimal for ultra-low-voltage, safety-critical parameter storage where protocol simplicity and voltage flexibility are mandatory.

Availability

HN58X24512FPI#S0 is available at Aetrix Electronics and suitable for consumer audio, industrial sensor nodes, set-top box parameter backup, and medical device usage logging requiring stable component supply and long-term lifecycle assurance.

Supply support for HN58X24512FPI#S0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Technology Corp. (now part of Renesas Electronics Corporation) is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, and memory solutions for embedded systems.

HN58X24512FPI#S0 belongs to Renesas' serial EEPROM product line, designed specifically for reliable, low-voltage, I²C-based nonvolatile storage in consumer electronics-emphasizing power efficiency, small footprint, and ease of integration.

FAQ

What is the maximum I²C clock frequency supported by HN58X24512FPI#S0?

HN58X24512FPI#S0 supports up to 1 MHz I²C clock frequency when operated at 2.5 V to 5.5 V supply, and 400 kHz when operated at 1.8 V to 5.5 V. This dual-speed capability ensures compatibility with both legacy and modern low-voltage microcontrollers without sacrificing throughput in higher-voltage domains. The HN58X24512FPI#S0 datasheet specifies strict timing margins-including tLOW, tHIGH, and tSU.STA-to guarantee robust communication across the full voltage range.

Does HN58X24512FPI#S0 require external pull-up resistors on SCL and SDA lines?

Yes, HN58X24512FPI#S0 requires external pull-up resistors on both SCL and SDA lines because its SDA pin uses an open-drain output structure and SCL is a CMOS input with no internal pull-up. Recommended values range from 2.2 kΩ to 10 kΩ depending on bus capacitance and desired rise time; Renesas' application guidance specifies that VOL must remain ≤0.4 V at IOL = 1.6 mA (for VCC ≥ 4.5 V), directly constraining pull-up selection. The HN58X24512FPI#S0 pin description confirms this requirement explicitly.

How does the write protect (WP) pin function on HN58X24512FPI#S0?

The WP pin on HN58X24512FPI#S0 is an active-high hardware write protection input. When driven high (VIH ≥ 0.7 × VCC), it disables all write operations-including byte and page writes-across the entire 512 kbit memory array. When low or floating (internally pulled down to VSS), full read/write access is enabled. This feature operates independently of software commands and remains effective during power transitions, making HN58X24512FPI#S0 suitable for safety-critical parameter storage where accidental overwrites must be physically prevented.

What is the endurance rating of HN58X24512FPI#S0 in page write mode?

HN58X24512FPI#S0 is rated for 10⁵ write/erase cycles when using page write mode, as confirmed in the Absolute Maximum Ratings and Notes sections of its official datasheet. This endurance applies specifically to 128-byte page programming; byte-write endurance is lower (10⁴ cycles). The HN58X24512FPI#S0 specification ties endurance to cumulative failure rate (1%), and data retention remains ≥10 years provided page-programming cycles stay below 10⁴-making it appropriate for infrequent but mission-critical configuration updates.

Is HN58X24512FPI#S0 qualified for automotive applications?

No, HN58X24512FPI#S0 is not qualified for automotive applications. The official Renesas documentation explicitly states that serial EEPROMs in this family-including HN58X24512FPI#S0-are authorized only for consumer applications such as cellular phones, camcorders, and audio equipment. Industrial use (e.g., automotive systems, embedded controllers, meters) requires prior consultation with Renesas sales offices, and no AEC-Q100 qualification is claimed for HN58X24512FPI#S0 in any revision of its datasheet.