Renesas HZ11A1LTA-E

Overview

HZ11A1LTA-E from Renesas Electronics is a silicon planar Zener diode optimized for low-noise voltage reference and stabilization in precision analog circuits, featuring a nominal zener voltage of 9.7 V (min 9.5 V, max 9.9 V), dynamic resistance of 80 Ω at 0.5 mA test current, 400 mW power dissipation, and DO-35 glass package with navy-blue cathode band. It serves as a stable voltage reference in regulated power supplies, sensor biasing, and ADC/DAC reference circuits where low noise and tight voltage tolerance are critical.

For engineers reviewing the HZ11A1LTA-E datasheet, HZ11A1LTA-E pinout, HZ11A1LTA-E application, or HZ11A1LTA-E equivalent, key selection criteria include its 9.7 V zener voltage tolerance (±0.2 V), low 1/3–1/10 noise level versus standard HZ series, 80 Ω dynamic impedance at 0.5 mA, −0.04 %/°C temperature coefficient near 10 V, and DO-35 package compatibility with through-hole PCB assembly.

Technical Context

This device operates as a two-terminal voltage reference using avalanche breakdown in a silicon planar junction, with specified DC testing per REJ03G0182-0300 Rev.3.00. Its low-noise design targets applications requiring minimal voltage fluctuation under varying load and temperature conditions.

The HZ11A1LTA-E exhibits a zener voltage temperature coefficient of approximately −0.04 %/°C (−0.39 mV/°C) at 9.7 V, consistent with the 6–12 V range where coefficient crosses zero, and maintains ≤1 μA reverse leakage at VR = 7.5 V - enabling stable biasing in high-impedance analog front-ends.

Key Specifications

Pinout & Package

Package: DO-35 glass axial-leaded package (Renesas code GRZZ0002ZB-A, JEITA SC-40), orange body with navy-blue cathode band; total mass 0.13 g; lead spacing 26.0 mm min.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode voltage reference applications.

Compared with MMBZ5240BLT1G and BZX84-C9V1, the HZ11A1LTA-E delivers superior noise performance and higher power margin in through-hole designs, making it optimal for legacy industrial equipment and calibration-critical analog systems where axial-leaded reliability and low drift are prioritized over footprint size.

Availability

HZ11A1LTA-E is available at Aetrix Electronics and suitable for industrial power supplies, precision sensor interfaces, and analog data acquisition systems requiring stable component supply with long-lifecycle support and traceable sourcing.

Supply support for HZ11A1LTA-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog and power devices, and system-on-chip solutions for industrial, automotive, and infrastructure markets.

The HZ-L Series was developed specifically for low-noise, high-stability voltage reference applications in analog signal chains, emphasizing reduced diode noise, tight zener voltage tolerance, and robust thermal performance in legacy-compatible DO-35 packaging.

FAQ

What is the exact zener voltage range for HZ11A1LTA-E at 0.5 mA test current?

The HZ11A1LTA-E has a guaranteed zener voltage range of 9.5 V to 9.9 V when tested at I_Z = 0.5 mA, per Renesas datasheet REJ03G0182-0300 Rev.3.00. This ±0.2 V window reflects its role as a precision reference diode, and the value is confirmed under DC test conditions - not AC or pulsed operation. The HZ11A1LTA-E achieves this specification while maintaining low noise and stable temperature coefficient.

Does HZ11A1LTA-E have a documented temperature coefficient, and how does it affect circuit accuracy?

Yes, the HZ11A1LTA-E exhibits a zener voltage temperature coefficient (γ_Z) of approximately −0.04 %/°C (−0.39 mV/°C) near its 9.7 V operating point, as shown in Figure 2 of the official datasheet. This low, predictable drift enables accurate compensation in wide-temperature-range applications such as outdoor industrial sensors. The HZ11A1LTA-E's coefficient is significantly better than generic Zeners in the same voltage range, directly improving long-term reference stability.

Can HZ11A1LTA-E be used as a direct replacement for older HZ11A1L parts?

Yes, HZ11A1LTA-E is a direct form-fit-function replacement for HZ11A1L, retaining identical DO-35 packaging, pinout, electrical specifications, and low-noise characteristics. The "TA-E" suffix denotes Renesas' post-merger part numbering convention (following NEC/Renesas integration in 2010), with no functional or parametric change from the original HZ11A1L. Engineers may substitute HZ11A1LTA-E without layout or schematic modification.

What is the maximum allowable reverse current before HZ11A1LTA-E exceeds its power rating?

At T_a = 25°C, the HZ11A1LTA-E's 400 mW power dissipation limit corresponds to a maximum average reverse current of ~41.2 mA when regulating at 9.7 V (P = V × I → I = 400 mW / 9.7 V). However, safe operation requires derating above 25°C per Figure 3 in the datasheet - e.g., ≤250 mW at 70°C ambient. The HZ11A1LTA-E must be operated within these thermal limits to avoid junction overheating and parameter shift.

How does the low-noise feature of HZ11A1LTA-E improve performance in ADC reference applications?

The HZ11A1LTA-E's noise level is approximately 1/3–1/10 that of standard HZ-series diodes, directly reducing broadband voltage noise injected into ADC reference inputs. In 12-bit+ data acquisition systems, this lowers effective number of bits (ENOB) degradation caused by reference noise - verified in Renesas application notes for sensor signal chains. The HZ11A1LTA-E thus enables higher-resolution measurements without external filtering or costly active references.