Renesas HZ11A1RE-E

Overview

HZ11A1RE-E from Renesas is a silicon planar Zener diode engineered for low-noise voltage regulation in precision analog circuits, featuring a nominal zener voltage of 9.7 V (min 9.5 V, max 9.9 V), dynamic resistance of 80 Ω at 0.5 mA, maximum power dissipation of 400 mW, and junction temperature rating up to 175°C - deployed in reference voltage sources for ADCs and sensor signal conditioning.

For engineers reviewing the HZ11A1RE-E datasheet, HZ11A1RE-E pinout, HZ11A1RE-E application, or HZ11A1RE-E equivalent, this page delivers verified electrical characteristics, DO-35 package mapping, cathode/anode terminal roles, low-noise performance context, and direct alternative part comparisons for stable biasing and reference design.

Technical Context

The HZ11A1RE-E operates as a two-terminal voltage reference device with DC-tested zener breakdown behavior, optimized for low-noise operation via reduced diode noise (≈1/3–1/10 of standard HZ series) and tight zener voltage tolerance (±0.2 V at 9.7 V nominal). Its low leakage and low zener impedance support stable regulation under light-load conditions.

Designed for ambient temperatures from −55°C to +175°C, it maintains specified performance across industrial and automotive-grade thermal ranges without derating until Ta > 50°C, where power dissipation linearly decreases per Fig.3 in the datasheet - enabling use in compact PCB layouts with minimal heatsinking.

Key Specifications

Pinout & Package

Package: DO-35 (JEITA code GRZZ0002ZB-A), glass axial leaded package with orange body color and navy-blue cathode band. Total mass ≈ 0.13 g; dimensions per SC-40 standard: φD = 2.0 mm, E = 4.2 mm, L = 26.0 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode voltage reference applications.

Compared with 1N4739A and BZX84-C9V1, the HZ11A1RE-E provides tighter voltage tolerance (±0.2 V vs. ±5%), verified low-noise operation, and superior thermal stability - making it preferred for metrology-grade references despite lower power rating and larger DO-35 footprint.

Availability

HZ11A1RE-E is available at Aetrix Electronics and suitable for precision ADC references, low-noise sensor biasing, and shunt-regulated power supplies requiring stable component supply, long-lifecycle support, and traceable industrial-grade sourcing.

Supply support for HZ11A1RE-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog power, and mixed-signal solutions for automotive, industrial, and IoT applications.

The HZ-L Series is part of Renesas' precision analog portfolio, designed specifically for low-noise, high-stability voltage reference applications in measurement, sensing, and signal conditioning systems.

FAQ

What is the exact zener voltage range for HZ11A1RE-E?

The HZ11A1RE-E has a guaranteed zener voltage range of 9.5 V to 9.9 V when tested at I_Z = 0.5 mA and T_a = 25°C. This 0.4 V span reflects its tight tolerance specification within the HZ11A1L variant group, distinguishing it from broader-tolerance alternatives like the 1N4739A (±5%). The value is DC-tested and applies directly to the HZ11A1RE-E unit without calibration.

Does HZ11A1RE-E support automotive temperature requirements?

Yes, the HZ11A1RE-E supports storage temperatures from −55°C to +175°C and operates reliably across industrial ambient ranges. While not explicitly qualified to AEC-Q200, its 175°C junction rating and stable γ_Z near −0.04 %/°C make it suitable for under-hood applications such as engine control sensor biasing - provided board-level thermal design maintains T_j ≤ 175°C. The HZ11A1RE-E is widely used in automotive subsystems where formal qualification is supplemented by robust validation.

Is HZ11A1RE-E pin-compatible with other DO-35 Zener diodes?

Yes, the HZ11A1RE-E uses the standard DO-35 axial package with cathode band marking on pin 1, matching mechanical and soldering footprints of all JEDEC-standard DO-35 devices including 1N47xx and BZX55 families. However, electrical compatibility depends on zener voltage, dynamic resistance, and noise performance - the HZ11A1RE-E is not a drop-in replacement for higher-voltage or non-low-noise variants without circuit revalidation.

What is the maximum reverse current specification for HZ11A1RE-E?

The HZ11A1RE-E specifies a maximum reverse current (I_R) of 1 μA at V_R = 2.0 V and T_a = 25°C. This ultra-low leakage supports energy-efficient operation in battery-backed systems and prevents loading errors in high-impedance reference nodes. The value is measured under DC conditions per REJ03G0182-0300 Rev.3.00 and applies strictly to the HZ11A1RE-E variant.

How does the noise performance of HZ11A1RE-E compare to generic Zener diodes?

The HZ11A1RE-E achieves approximately 1/3 to 1/10 the diode noise level of standard HZ-series Zeners, as confirmed in Renesas documentation. This reduction stems from proprietary silicon planar processing and optimized junction geometry - directly improving signal-to-noise ratio in applications like precision instrumentation amplifiers and high-resolution ADC references where the HZ11A1RE-E serves as the primary voltage reference element.