Renesas HZ11A2L-E

Overview

HZ11A2L-E from Renesas is a silicon planar Zener diode engineered for low-noise voltage regulation in precision analog circuits, with a nominal zener voltage of 9.7–10.1 V, 400 mW power dissipation, 8.0 Ω dynamic impedance at 0.5 mA test current, and DO-35 glass package. It serves in stabilized power supplies, reference voltage sources, and noise-sensitive instrumentation.

For engineers reviewing the HZ11A2L-E datasheet, HZ11A2L-E pinout, HZ11A2L-E application, or HZ11A2L-E equivalent, key selection criteria include zener voltage tolerance (±0.2 V), low noise performance (1/3–1/10 of standard HZ series), temperature coefficient behavior, and DO-35 mechanical compatibility in space-constrained PCB layouts.

Technical Context

This device operates as a two-terminal voltage reference using avalanche breakdown in a silicon planar junction. Its low dynamic resistance (8.0 Ω) and tight zener voltage tolerance (9.7–10.1 V at I_Z = 0.5 mA) enable stable regulation under varying load conditions.

The HZ11A2L-E exhibits a negative temperature coefficient near 10 V, typical for mid-voltage Zeners, and maintains junction temperature up to 175°C while rated for storage between −55°C and +175°C - supporting industrial-grade thermal robustness.

Key Specifications

Pinout & Package

DO-35 glass axial package with orange body color and navy blue cathode band. Cathode is marked by band; anode is unmarked lead.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode voltage reference applications.

Compared with 1N4740A and BZX55C10, the HZ11A2L-E delivers tighter voltage tolerance (±0.2 V vs. ±5%), lower dynamic impedance (8.0 Ω vs. ≥17 Ω), and verified low-noise operation - making it uniquely suitable for metrology-grade and audio-critical reference designs where stability and spectral purity are mandatory.

Availability

HZ11A2L-E is available at Aetrix Electronics and suitable for stabilized power supplies, precision voltage references, low-noise analog front-ends, and industrial sensor excitation requiring stable component supply and long-lifecycle support.

Supply support for HZ11A2L-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor manufacturer specializing in microcontrollers, analog, and power devices for automotive, industrial, and infrastructure markets.

The HZ-L Series was designed specifically for low-noise, high-stability voltage reference applications in precision analog systems - emphasizing reduced diode noise, tight zener voltage control, and robust thermal performance in DO-35 packaging.

FAQ

What is the zener voltage range for HZ11A2L-E?

The HZ11A2L-E has a specified zener voltage range of 9.7 V to 10.1 V at a test current of 0.5 mA, per Renesas datasheet REJ03G0182-0300 Rev.3.00. This narrow ±0.2 V window ensures high accuracy in voltage reference applications where tight regulation is essential. The HZ11A2L-E achieves this tolerance through process-controlled silicon planar junction fabrication.

Is HZ11A2L-E suitable for low-noise applications?

Yes, the HZ11A2L-E is explicitly characterized for low-noise operation - its noise level is approximately 1/3 to 1/10 that of the standard HZ series, as confirmed in the Renesas datasheet. This makes the HZ11A2L-E appropriate for audio preamplifiers, sensor signal conditioning, and precision instrumentation where diode-generated noise would otherwise degrade SNR.

What package type does HZ11A2L-E use?

The HZ11A2L-E uses the DO-35 glass axial package (JEITA code GRZZ0002ZB-A), with an orange body and navy blue cathode band. Its dimensions conform to SC-40 standard, and it weighs approximately 0.13 g. This hermetically sealed package ensures long-term parameter stability and low parasitic capacitance - critical for high-frequency and precision analog use of the HZ11A2L-E.

What is the maximum power dissipation rating for HZ11A2L-E?

The HZ11A2L-E has a maximum power dissipation (P_d) of 400 mW at ambient temperature (T_a) = 25°C, as stated in the Absolute Maximum Ratings table of the Renesas datasheet. Derating is required above 25°C per the published power vs. ambient temperature curve, with zero dissipation reached at ~150°C. This rating supports compact, non-heatsinked designs using the HZ11A2L-E.

Does HZ11A2L-E have a specified temperature coefficient?

Yes, the HZ11A2L-E exhibits a zener voltage temperature coefficient (γ_Z) typical of mid-voltage Zeners (~10 V), shown in Figure 2 of the datasheet as approximately −0.04 %/°C or −400 μV/°C. While not individually specified per part number, this value is consistent across the HZ11x family and enables predictable first-order temperature compensation when used in the HZ11A2L-E's intended reference applications.