Renesas HZ11B1RE-E

Overview

HZ11B1RE-E from Renesas is a silicon planar Zener diode engineered for low-noise voltage regulation in precision analog circuits, featuring a nominal zener voltage of 10.4 V (min 10.2 V, max 10.6 V), dynamic resistance of 80 Ω at 0.5 mA, maximum power dissipation of 400 mW, and junction temperature rating up to 175°C - deployed in reference supplies for ADCs, sensor signal conditioning, and low-drift op-amp bias networks.

For engineers reviewing the HZ11B1RE-E datasheet, HZ11B1RE-E pinout, HZ11B1RE-E application, or HZ11B1RE-E equivalent, key selection criteria include verified low-noise performance (1/3–1/10 of standard HZ series), DO-35 package compatibility with through-hole PCB layouts, zener voltage tolerance ±0.2 V, temperature coefficient stability across 10.2–10.6 V range, and suitability for low-leakage (<1 μA) stabilized biasing in high-impedance nodes.

Technical Context

This device operates as a two-terminal shunt regulator with DC-tested zener characteristics, optimized for noise-sensitive applications where thermal drift and dynamic impedance directly impact reference stability. Its low leakage current (<1 μA at VR = 2.0 V) and tight VZ tolerance support accurate voltage clamping without loading sensitive source impedances.

The HZ11B1RE-E uses a silicon planar construction with navy-blue cathode band marking and orange body color, packaged in JEITA-standard DO-35 (GRZZ0002ZB-A) with SC-40 footprint. It exhibits a zener voltage temperature coefficient near zero crossing (~0.02 %/°C at ~10.4 V), confirmed by Figure 2 in REJ03G0182-0300 Rev.3.00.

Key Specifications

Pinout & Package

Package: DO-35 (JEITA GRZZ0002ZB-A / SC-40), glass axial leaded case with navy-blue cathode band and orange body color; mass 0.13 g; dimensions: φD = 2.0 mm, E = 4.2 mm, L = 26.0 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode voltage regulation applications.

Compared with 1N4740A and BZX84-C10, the HZ11B1RE-E delivers superior low-noise performance and tighter voltage tolerance at micro-current operation, making it optimal for precision analog references where spectral purity and low-leakage biasing are critical - not merely a voltage clamp.

Availability

HZ11B1RE-E is available at Aetrix Electronics and suitable for high-resolution ADC reference design, low-drift op-amp biasing, and temperature-stable sensor excitation requiring stable component supply across industrial, test & measurement, and medical electronics programs.

Supply support for HZ11B1RE-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog power, and SoC solutions for automotive, industrial, and infrastructure markets.

The HZ-L Series Zener diodes were developed specifically for low-noise, low-leakage voltage reference applications in precision analog signal chains - targeting designers of high-fidelity measurement, sensor interface, and calibration-critical systems.

FAQ

What is the exact zener voltage range specified for HZ11B1RE-E?

The HZ11B1RE-E has a guaranteed zener voltage range of 10.2 V minimum to 10.6 V maximum when tested at I_Z = 0.5 mA, per REJ03G0182-0300 Rev.3.00 page 2. This 0.4 V window reflects tight process control for precision reference use, and the nominal value is 10.4 V. The HZ11B1RE-E is not rated for higher test currents - its specifications are defined exclusively at 0.5 mA.

Does HZ11B1RE-E have a documented temperature coefficient, and how does it affect stability?

Yes, the HZ11B1RE-E exhibits a zener voltage temperature coefficient near zero crossing - approximately +0.02 %/°C at 10.4 V, as shown in Figure 2 of REJ03G0182-0300 Rev.3.00. This low drift minimizes reference voltage shift over temperature, supporting stable operation from −55°C to +125°C ambient. The HZ11B1RE-E's coefficient is significantly better than generic 10 V Zeners, which often exceed ±0.05 %/°C.

What is the maximum reverse leakage current for HZ11B1RE-E, and under what condition is it measured?

The maximum reverse leakage current for HZ11B1RE-E is 1 μA, measured at V_R = 2.0 V (page 2, Electrical Characteristics table). This ultra-low leakage preserves signal integrity in high-impedance circuits such as sensor bias networks and op-amp input stages. The HZ11B1RE-E achieves this while maintaining low dynamic resistance - a combination rarely found in standard Zener diodes.

Is HZ11B1RE-E compatible with automated through-hole assembly processes?

Yes, the HZ11B1RE-E uses the standard DO-35 axial package (JEITA GRZZ0002ZB-A) with 2.0 mm diameter and 26 mm length, fully compatible with industry-standard axial lead insertion and wave soldering equipment. Its navy-blue cathode band and orange body provide clear visual polarity identification for both manual and automated optical inspection systems used with the HZ11B1RE-E.

How does the noise performance of HZ11B1RE-E compare to standard Zener diodes like the 1N4740A?

The HZ11B1RE-E delivers approximately 1/3 to 1/10 the broadband voltage noise of conventional Zener diodes such as the 1N4740A, as explicitly stated in the "Features" section of REJ03G0182-0300 Rev.3.00. This is achieved via proprietary silicon planar processing and optimized junction geometry - a key differentiator for the HZ11B1RE-E in audio, metrology, and high-accuracy data acquisition applications.