Renesas HZ11B2J-E

Overview

HZ11B2J-E from Renesas is a silicon planar Zener diode optimized for low-noise voltage regulation in precision analog circuits, with a nominal zener voltage of 10.6 V (min 10.4 V, max 10.8 V), dynamic resistance of 80 Ω at 0.5 mA, maximum power dissipation of 400 mW, and junction temperature rating up to 175°C - used in stabilized power supplies and reference circuits requiring low thermal drift.

For engineers reviewing the HZ11B2J-E datasheet, HZ11B2J-E pinout, HZ11B2J-E application, or HZ11B2J-E equivalent, key selection criteria include zener voltage tolerance (±0.2 V), low noise performance (1/3–1/10 lower than standard HZ series), DO-35 package compatibility, and temperature coefficient behavior across 10.4–10.8 V range.

Technical Context

The HZ11B2J-E operates as a two-terminal voltage reference device using silicon planar junction technology, with zener breakdown mechanism dominant in its 10.4–10.8 V range. Its low dynamic resistance (80 Ω) and low leakage current support stable regulation under varying load conditions.

Designed for DC-biased operation per datasheet note, it exhibits a zener voltage temperature coefficient near zero crossing - confirmed by Figure 2 showing γ_Z ≈ −0.02 %/°C at ~10.6 V - enabling minimal drift in mid-range voltage references without external compensation.

Key Specifications

Pinout & Package

Package: DO-35 glass axial leaded package (JEITA code GRZZ0002ZB-A, Renesas code SC-40), orange body with navy blue cathode band, mass 0.13 g, dimensions φD = 2.0 mm, L = 26.0 mm, E = 4.2 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar zener reference applications.

Compared with 1N4740A and BZX55C10, the HZ11B2J-E provides superior voltage accuracy (±0.2 V vs. ±5%), verified low-noise operation, and DO-35 footprint compatibility - making it optimal for high-fidelity analog systems where reference integrity directly impacts measurement fidelity.

Availability

HZ11B2J-E is available at Aetrix Electronics and suitable for stabilized power supplies, precision instrumentation references, and low-noise analog signal conditioning requiring stable component supply and consistent parametric performance across production lots.

Supply support for HZ11B2J-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor manufacturer specializing in microcontrollers, analog power devices, and timing solutions, with headquarters in Tokyo and design centers worldwide.

The HZ-L Series is part of Renesas' precision analog portfolio, engineered specifically for low-noise voltage reference applications in test equipment, audio systems, and industrial sensors where zener stability and spectral purity are critical.

FAQ

What is the exact zener voltage range specified for HZ11B2J-E?

The HZ11B2J-E has a guaranteed zener voltage range of 10.4 V minimum to 10.8 V maximum when tested at I_Z = 0.5 mA and T_a = 25°C. This 0.4 V tolerance band is tighter than standard zener diodes and reflects Renesas' HZ-L Series precision grading. The value is measured under DC conditions per datasheet note, and the typical nominal value is 10.6 V. This specification is confirmed on page 2 of REJ03G0182-0300 Rev.3.00.

Does HZ11B2J-E support operation above 100°C ambient temperature?

Yes, the HZ11B2J-E supports operation up to 175°C junction temperature, and its storage temperature range extends from −55°C to +175°C. Derating curves in Figure 3 show usable power dissipation down to ~200 mW at 100°C ambient. For continuous operation at elevated ambient, thermal design must ensure junction temperature remains within limit - e.g., with adequate PCB copper area. The HZ11B2J-E is rated for industrial environments where such conditions occur.

Is HZ11B2J-E compatible with automated SMT assembly processes?

No, the HZ11B2J-E uses a DO-35 axial glass package with radial leads, designed for through-hole mounting only. It is not suitable for reflow soldering or pick-and-place SMT assembly. The package dimensions (L = 26.0 mm, φD = 2.0 mm) and lead spacing require manual or wave-solder placement. For SMT-compatible alternatives, Renesas offers surface-mount zener families like the RZ series, but HZ11B2J-E itself is strictly through-hole.

How does the noise performance of HZ11B2J-E compare to generic zener diodes?

The HZ11B2J-E delivers approximately 1/3 to 1/10 the noise level of standard HZ-series zeners, as stated in the official features section. This low-noise characteristic results from optimized silicon planar junction processing and tighter process controls. Unlike generic zeners, the HZ-L Series is explicitly characterized and binned for noise-sensitive applications - making HZ11B2J-E suitable for audio preamps and precision sensor interfaces where noise floor directly impacts system resolution.

Can HZ11B2J-E be used in place of a 10 V zener diode in existing designs?

The HZ11B2J-E is not a direct 10 V replacement: its nominal zener voltage is 10.6 V (10.4–10.8 V range), not 10.0 V. Substituting it for a true 10 V part (e.g., 1N4740A) will shift reference levels by +6%, potentially violating system tolerances. However, if the design accommodates 10.6 V and benefits from tighter tolerance, lower noise, and DO-35 compatibility, HZ11B2J-E is a valid upgrade - provided circuit analysis confirms bias point stability and regulation margin remain sufficient.