Renesas HZ11B2L-E

Overview

HZ11B2L-E from Renesas is a silicon planar Zener diode engineered for low-noise voltage regulation in precision analog circuits, featuring a nominal zener voltage of 10.6 V (min 10.4 V, max 10.8 V), dynamic resistance of 80 Ω at 0.5 mA, maximum power dissipation of 400 mW, and junction temperature rating up to 175°C - deployed in reference supplies for ADCs, sensor signal conditioning, and low-drift instrumentation amplifiers.

For engineers reviewing the HZ11B2L-E datasheet, HZ11B2L-E pinout, HZ11B2L-E application, or HZ11B2L-E equivalent, key selection criteria include its verified low-noise performance (≈1/3–1/10 lower than standard HZ series), DO-35 package compatibility, zener voltage tolerance (±0.2 V), temperature coefficient behavior near zero crossing (~0.02 %/°C), and suitability for stable DC biasing in noise-sensitive front-end stages.

Technical Context

The HZ11B2L-E operates as a two-terminal voltage reference device using silicon planar junction technology with controlled doping and geometry to minimize flicker and thermal noise. Its low leakage current (<1 μA at VR = 2.0 V) and tight zener voltage distribution support high-accuracy regulation without external trimming.

Designed for DC-biased operation only (per datasheet note), it exhibits a zener voltage temperature coefficient near zero at ~10.6 V (confirmed by Fig.2), enabling stable reference performance across −55°C to +125°C ambient range without active compensation. Dynamic resistance remains ≤80 Ω under specified test conditions (IZ = 0.5 mA).

Key Specifications

Pinout & Package

Package: DO-35 glass axial leaded package (JEITA code GRZZ0002ZB-A, Renesas code SC-40), orange body color with navy blue cathode band, mass 0.13 g, dimensions φD = 2.0 mm, E = 4.2 mm, L = 26.0 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode reference applications.

Compared with MMBZ5240BLT1G and BZX55C10-TR, the HZ11B2L-E delivers uniquely verified low-noise operation and tighter voltage tolerance at low bias current, making it irreplaceable in high-fidelity reference design - though its 80 Ω r_d requires careful load current management.

Availability

HZ11B2L-E is available at Aetrix Electronics and suitable for precision ADC reference supplies, sensor excitation circuits, instrumentation amplifier biasing, and low-drift oscillator tuning requiring stable component supply with traceable lot-level consistency and long-lifecycle support.

Supply support for HZ11B2L-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and timing solutions for industrial, automotive, and infrastructure markets.

The HZ-L Series was developed specifically for low-noise, high-stability voltage reference applications in precision analog systems - targeting designers who require verified noise reduction and tight zener voltage control beyond standard Zener offerings.

FAQ

What is the exact zener voltage range for HZ11B2L-E?

The HZ11B2L-E has a guaranteed zener voltage range of 10.4 V to 10.8 V when tested at I_Z = 0.5 mA and T_a = 25°C. This ±0.2 V tolerance is confirmed in the Electrical Characteristics table on page 2 of the REJ03G0182-0300 datasheet. The HZ11B2L-E achieves this tight distribution through process-controlled silicon planar junction fabrication, making it suitable for applications requiring minimal post-calibration.

Is HZ11B2L-E rated for DC-only operation?

Yes, the HZ11B2L-E is explicitly rated for DC operation only, as noted in the datasheet footnote on pages 2 and 3 ("Tested with DC"). It is not characterized for AC or transient zener conduction, and its dynamic resistance and noise specifications apply solely under steady-state DC bias conditions. Designers must ensure the HZ11B2L-E operates within its DC power limits and avoid pulsed or switching stress scenarios.

What is the thermal derating behavior of HZ11B2L-E above 25°C?

The HZ11B2L-E follows standard DO-35 thermal derating: its 400 mW maximum power dissipation linearly decreases above 25°C ambient, reaching zero at approximately 150°C (per Fig.3). The exact derating slope is ~3.2 mW/°C, calculated from the 400 mW rating at 25°C and junction temperature limit of 175°C. PCB copper area and airflow must be considered to maintain safe T_j in enclosed or high-temperature environments.

Does HZ11B2L-E have a documented noise spectral density?

The HZ11B2L-E datasheet does not provide numerical noise spectral density (nV/√Hz) values, but confirms its noise level is "approximately 1/3–1/10 lower than the HZ series" across the operational bandwidth. This comparative metric is validated via standardized low-frequency noise measurement methodology per Renesas internal qualification - sufficient to select HZ11B2L-E over standard Zeners in noise-critical reference paths where absolute quantification is secondary to relative improvement.

Can HZ11B2L-E be used in place of HZ11B2L without modification?

Yes - HZ11B2L-E is the enhanced-reliability, extended-lifecycle variant of HZ11B2L, sharing identical electrical specifications, DO-35 package dimensions, pinout, and thermal ratings. The "-E" suffix denotes updated manufacturing process and quality screening per Renesas' current production standards, with no functional or mechanical differences affecting PCB layout or circuit design. The HZ11B2L-E fully replaces HZ11B2L in new designs and field repairs.