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Renesas HZ11B2LTD-E
- Part No.:
- HZ11B2LTD-E
- Manufacturer:
- Renesas
- Category:
- Single Zener Diodes
- Package:
- -
- Datasheet:
-
HZ11B2LTD-E.pdf
- Description:
- DIODE ZENER 0.4W
- Quantity:
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Inventory:12,500
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Product details
Overview
HZ11B2LTD-E from Renesas Electronics is a silicon planar Zener diode optimized for low-noise voltage reference and stabilization in precision analog circuits, with a nominal zener voltage of 10.6 V (min 10.4 V, max 10.8 V), dynamic resistance of 80 Ω at 0.5 mA, maximum power dissipation of 400 mW, and operating junction temperature up to 175°C. It is used in low-drift power supply feedback paths, sensor excitation references, and instrumentation front-end biasing.
For engineers reviewing the HZ11B2LTD-E datasheet, HZ11B2LTD-E pinout, HZ11B2LTD-E application, or HZ11B2LTD-E equivalent, key selection criteria include zener voltage tolerance (±0.2 V), low noise performance (≈1/3–1/10 of standard HZ series), temperature coefficient (−0.04 %/°C typical at 10.6 V), DO-35 package compatibility, and suitability for stable reference generation under low-current (<1 mA) conditions.
Technical Context
This device operates as a two-terminal voltage reference using avalanche breakdown in a planar-diffused silicon junction. Its low dynamic impedance (80 Ω @ 0.5 mA) ensures minimal output voltage variation under load transients, while its specified reverse leakage current ≤1 μA at VR = 8.0 V supports high-impedance sensing nodes. The −0.04 %/°C temperature coefficient near 10.6 V enables stable operation across −55°C to +125°C ambient without external compensation.
The HZ11B2LTD-E is fabricated using Renesas' HZ-L series process, which reduces bulk and surface recombination noise versus legacy HZ diodes. It is rated for Standard quality grade per Renesas classification-suitable for office equipment, test instruments, audio systems, and industrial robots-but not approved for automotive, medical life-support, or aerospace applications without explicit written consent.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 10.4 V min / 10.8 V max @ IZ = 0.5 mA - defines tight regulation window for precision reference design |
| Dynamic Resistance (rd) | 80 Ω max @ IZ = 0.5 mA - ensures <1 mV output shift per 10 μA load change |
| Power Dissipation (Pd) | 400 mW max @ Ta = 25°C - supports continuous operation in compact PCB layouts with minimal heatsinking |
| Reverse Leakage (IR) | ≤1 μA @ VR = 8.0 V - preserves high-impedance node integrity in battery-powered or micro-power circuits |
| Temperature Coefficient (γZ) | −0.04 %/°C typical @ 10.6 V - enables <±0.5% drift over −25°C to +85°C ambient range |
| Junction Temperature (Tj) | 175°C max - allows reliable operation in thermally constrained enclosures or near heat-generating components |
| Package | DO-35 (JEITA GRZZ0002ZB-A) - industry-standard axial leaded package compatible with manual and wave soldering |
Pinout & Package
Package: DO-35 glass axial-leaded package (Renesas JEITA code GRZZ0002ZB-A), body color orange, cathode identified by navy-blue band. Mass: 0.13 g (typ.). Dimensions: φD = 2.0 mm, L = 26.0 mm, E = 4.2 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (banded end) | Cathode | Connected to regulated output node; must be held at higher potential than anode during conduction |
| 2 (non-banded end) | Anode | Connected to ground or lower-potential rail; completes current path during zener breakdown |
Key Features
| Feature | Design Value |
|---|---|
| Low-noise zener structure | Reduces broadband voltage noise by ≈70–90% vs. standard HZ series-critical for ADC reference buffers and low-level signal conditioning |
| Tight VZ tolerance | ±0.2 V at 10.6 V enables direct use in 10-bit+ systems without trimming or calibration |
| Low dynamic impedance | 80 Ω supports stable regulation even with 10–100 nF bypass capacitance and moderate load transients |
| High thermal stability | Negligible curvature in γZ vs. VZ curve near 10.6 V minimizes need for second-order temperature compensation |
| Standard quality grade | Qualified for computers, test equipment, audio systems, and industrial robots-no special qualification required for these applications |
Applications
| Industrial Sensor Signal Conditioning | Precision Power Supply Feedback |
|---|---|
Use Scenario: Biasing bridge-based pressure or temperature sensors in factory-floor data loggers where supply rails vary ±5%. IC Role / Device Role / Timing Role: Provides stable 10.6 V reference for op-amp excitation and ratiometric ADC conversion. Use Value: Low 80 Ω dynamic resistance prevents gain error drift under varying sensor loading; −0.04 %/°C TC maintains <0.1% reference error from −25°C to +70°C. | Use Scenario: Voltage reference in isolated flyback converter feedback loop requiring <1% output regulation over line/load/temperature. IC Role / Device Role / Timing Role: Sets regulated output voltage via optocoupler-driven TL431 replacement in secondary-side sensing. Use Value: Tight 10.4–10.8 V tolerance eliminates need for external resistor trimming; 400 mW rating sustains continuous operation at 0.5 mA bias current. |
| Portable Instrumentation Reference | Audio Equipment DC Biasing |
Use Scenario: Low-power handheld multimeter requiring stable reference for autoranging and auto-zero functions. IC Role / Device Role / Timing Role: Supplies clean 10.6 V reference to SAR ADC driver and comparator hysteresis network. Use Value: ≤1 μA reverse leakage extends battery life; ultra-low noise prevents digitization artifacts in 16-bit measurements. | Use Scenario: DC offset nulling in high-fidelity headphone amplifier input stage operating from ±12 V rails. IC Role / Device Role / Timing Role: Generates matched bias voltages for dual op-amp inputs to minimize THD+N. Use Value: Identical TC and matching between HZ11B2LTD-E units enables <0.01% tracking error across temperature; DO-35 form factor fits dense analog PCB layouts. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener diode voltage reference applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BZX84-C10LT1G (ON Semiconductor) | Zener voltage 9.4–10.6 V (±5%), rd = 150 Ω @ 5 mA, Pd = 300 mW, SOT-23 package | SMT-only; higher dynamic resistance increases load regulation error; lower power rating limits bias current headroom | Select when board space is constrained and 5% VZ tolerance is acceptable; requires re-layout for SMT placement |
| 1N4740A (ON Semiconductor) | Zener voltage 10.0–11.0 V (±5%), rd = 9 Ω @ 25 mA, Pd = 1 W, DO-41 package | Higher power dissipation demands larger heatsinking; lower rd only beneficial above 10 mA-increases noise at sub-mA bias | Select for high-current (>5 mA) reference designs where thermal margin is available; not suitable for low-noise micro-power use |
Compared with BZX84-C10LT1G and 1N4740A, the HZ11B2LTD-E delivers superior low-current stability (0.5 mA test point), tighter voltage tolerance (±0.2 V vs. ±5%), and purpose-optimized low-noise performance-making it preferred for precision analog reference applications below 1 mA.
Availability
HZ11B2LTD-E is available at Aetrix Electronics and suitable for industrial sensor interfaces, portable instrumentation, and audio equipment requiring stable component supply with consistent parametric performance across production lots.
Supply support for HZ11B2LTD-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor manufacturer headquartered in Tokyo, Japan, specializing in microcontrollers, analog and power devices, and system-on-chip solutions for industrial, automotive, and infrastructure markets.
The HZ-L series was developed by Renesas to address demand for ultra-low-noise, tightly-toleranced Zener references in high-accuracy analog signal chains-particularly for test equipment, sensor interfaces, and precision power management where legacy diodes introduced measurable measurement uncertainty.
FAQ
What is the exact zener voltage range for HZ11B2LTD-E at 0.5 mA test current?
The HZ11B2LTD-E has a guaranteed zener voltage range of 10.4 V (minimum) to 10.8 V (maximum) when tested at IZ = 0.5 mA, DC, at Ta = 25°C. This ±0.2 V tolerance is significantly tighter than standard 5% Zener diodes and enables direct use in 10-bit+ data acquisition systems without calibration. The HZ11B2LTD-E achieves this via Renesas' HZ-L series low-noise planar diffusion process.
Is HZ11B2LTD-E suitable for automotive applications?
No, the HZ11B2LTD-E is classified as a Standard quality grade device per Renesas documentation and is explicitly intended for computers, office equipment, communications gear, test instruments, audio/video systems, home appliances, machine tools, personal electronics, and industrial robots. It is not qualified for automotive use-including engine control, ADAS, or infotainment-without prior written consent from Renesas Electronics, as stated in their quality grade policy.
What is the maximum allowable reverse leakage current for HZ11B2LTD-E, and at what voltage is it specified?
The maximum reverse leakage current for HZ11B2LTD-E is 1 μA, specified at VR = 8.0 V and Ta = 25°C. This low leakage supports high-impedance reference nodes in battery-powered or micro-power designs, minimizing standby current draw and preserving accuracy in sensor bias networks. The HZ11B2LTD-E maintains this specification across its full storage temperature range (−55°C to +175°C).
Does HZ11B2LTD-E have a specified temperature coefficient, and how does it affect long-term stability?
Yes, the HZ11B2LTD-E exhibits a typical temperature coefficient (γZ) of −0.04 %/°C at its nominal 10.6 V zener voltage. This results in less than ±0.5% total drift over a −25°C to +85°C ambient range-enabling stable operation in unheated industrial enclosures. The coefficient is derived from Renesas' published γZ vs. VZ curve (Fig.2, REJ03G0182-0300 Rev.3.00), and the HZ11B2LTD-E falls within the flat region near 10.6 V where curvature is minimal.
Can HZ11B2LTD-E be used as a direct replacement for older HZ11B2L parts?
Yes, the HZ11B2LTD-E is a direct functional and mechanical replacement for HZ11B2L, sharing identical electrical specifications (VZ, rd, Pd, Tj), DO-35 package dimensions, pinout, and marking convention. The "TD-E" suffix reflects Renesas' post-merger part numbering alignment (NEC + Renesas Technology → Renesas Electronics), not a parametric revision. All HZ-L series documentation applies fully to HZ11B2LTD-E.
HZ11B2LTD-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- -
- Tolerance:
- -
- Power - Max:
- -
- Impedance (Max) (Zzt):
- -
- Current - Reverse Leakage @ Vr:
- -
- Voltage - Forward (Vf) (Max) @ If:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
HZ11B2LTD-E FAQ
1.How can I place an order for HZ11B2LTD-E through Aetrix?
Please submit a Request for Quotation (RFQ) for HZ11B2LTD-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HZ11B2LTD-E reliable?
The price and inventory of HZ11B2LTD-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HZ11B2LTD-E is usually 5 days.
3.What payment methods are accepted for HZ11B2LTD-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HZ11B2LTD-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HZ11B2LTD-E?
HZ11B2LTD-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HZ11B2LTD-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HZ11B2LTD-E?
For technical support, including HZ11B2LTD-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HZ11B2LTD-E requirements.
6.How does Aetrix verify that HZ11B2LTD-E is sourced from the original manufacturer or authorized distributors?
All HZ11B2LTD-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HZ11B2LTD-E meets industry standards.
7.What is the process for return or replacement of HZ11B2LTD-E?
All HZ11B2LTD-E units undergo pre-shipment inspection (PSI). If there is an issue with HZ11B2LTD-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HZ11B2LTD-E part is unused and in its original packaging.
Return procedure for HZ11B2LTD-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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