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Renesas HZ11B2TD-P-E
- Part No.:
- HZ11B2TD-P-E
- Manufacturer:
- Renesas
- Category:
- Single Zener Diodes
- Package:
- -
- Datasheet:
-
HZ11B2TD-P-E.pdf
- Description:
- DIODE ZENER 0.5W
- Quantity:
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Inventory:17,500
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Product details
Overview
HZ11B2TD-P-E from Renesas is a silicon planar Zener diode optimized for low-noise voltage reference and stabilization in precision analog circuits, featuring a nominal zener voltage of 10.6 V (min 10.4 V, max 10.8 V), dynamic resistance of 80 Ω at 0.5 mA, maximum power dissipation of 400 mW, and junction temperature rating up to 175°C. It is used in low-drift bandgap reference buffers and noise-sensitive instrumentation power rails.
For engineers reviewing the HZ11B2TD-P-E datasheet, HZ11B2TD-P-E pinout, HZ11B2TD-P-E application, or HZ11B2TD-P-E equivalent, key selection criteria include zener voltage tolerance (±0.2 V), low noise performance relative to standard HZ series, DO-35 package thermal limits, and temperature coefficient behavior near 10.6 V.
Technical Context
This device operates as a two-terminal voltage reference with DC-tested zener breakdown characteristics. Its low dynamic impedance (80 Ω) and reduced noise level-approximately 1/3–1/10 that of the legacy HZ series-enable stable regulation under light-load conditions typical in sensor signal conditioning and ADC reference buffering.
The HZ11B2TD-P-E exhibits a positive temperature coefficient near 10.6 V (≈+0.04 %/°C per Fig.2), consistent with mid-voltage Zeners in the HZ-L family. It is rated for continuous operation up to 175°C junction temperature and requires derating above 25°C ambient per the published power vs. temperature curve.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 10.4 V min / 10.8 V max at IZ = 0.5 mA - defines tight 0.4 V tolerance window for precision biasing |
| Dynamic Resistance (rd) | 80 Ω max at IZ = 0.5 mA - ensures minimal output voltage shift under load variation |
| Power Dissipation (Pd) | 400 mW max at Ta = 25°C - sets PCB trace width and thermal pad requirements for DO-35 layout |
| Reverse Current (IR) | 1 μA max at VR = 2.0 V - guarantees low leakage in high-impedance reference nodes |
| Junction Temperature (Tj) | −55°C to +175°C - supports operation in automotive under-hood and industrial control environments |
| Noise Level | ≈1/3–1/10 of HZ series - directly reduces RMS noise contribution in low-frequency (<10 kHz) analog references |
Pinout & Package
Package: DO-35 (JEITA code GRZZ0002ZB-A, Renesas code SC-40), glass axial leaded, orange body with navy blue cathode band. Mass: 0.13 g. Dimensions: φD = 2.0 mm, L = 26.0 mm, E = 4.2 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Cathode) | Zener breakdown terminal | Connected to higher potential node; polarity critical for proper reverse-bias operation |
| 2 (Anode) | Reference ground return | Typically tied to system ground or low-impedance bias point; establishes reference potential |
Key Features
| Feature | Design Value |
|---|---|
| Low-noise Zener structure | Reduces broadband voltage noise by factor of 3–10 vs. standard HZ series, critical for µV-level signal chains |
| Tight VZ tolerance | ±0.2 V at 10.6 V enables direct replacement in 10 V reference designs without recalibration |
| Low dynamic impedance | 80 Ω maintains <1 mV output shift across ±100 µA load current changes in buffered reference circuits |
| High-temperature reliability | Rated to 175°C junction temperature supports use in sealed enclosures with limited airflow |
| DO-35 mechanical standardization | Compatible with legacy through-hole assembly tooling and IPC-7351B footprint templates |
Applications
| Instrumentation Amplifier Reference | ADC Voltage Reference Buffer |
|---|---|
Use Scenario: Providing stable 10.6 V reference for gain-setting resistors and offset trimming in precision instrumentation amplifiers. IC Role / Device Role / Timing Role: Two-terminal passive voltage reference establishing fixed bias point independent of supply ripple. Use Value: Low 80 Ω rd minimizes interaction with amplifier input bias currents, preserving CMRR and THD performance. |
Use Scenario: Supplying clean reference voltage to 16-bit SAR ADCs in data acquisition systems where supply noise exceeds 10 mVpp. IC Role / Device Role / Timing Role: Low-noise Zener element in shunt-regulated reference buffer stage preceding ADC REF pin. Use Value: 1/3–1/10 noise reduction versus standard Zeners lowers effective ENOB degradation from reference noise by ≥1.5 bits. |
| Temperature-Stable Bias Generator | Low-Power Sensor Excitation |
Use Scenario: Generating temperature-compensated bias for RTD or thermistor front-end circuits operating from 0°C to 125°C. IC Role / Device Role / Timing Role: Zener voltage source combined with NTC network to counteract thermal drift in analog signal paths. Use Value: Predictable +0.04 %/°C tempco near 10.6 V simplifies compensation network design versus wider-tolerance alternatives. |
Use Scenario: Delivering stable excitation voltage to bridge-based pressure sensors in battery-powered IoT nodes. IC Role / Device Role / Timing Role: Low-leakage (1 µA max) shunt reference maintaining accuracy during sleep-mode microampere quiescent current. Use Value: Sub-µA reverse current prevents measurable discharge of backup capacitors during extended standby intervals. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener reference applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BZX85C10 (Nexperia) | VZ = 10 V ±5%, rd = 20 Ω typical but higher noise; DO-41 package (larger footprint) | Higher tolerance and noise limit use in <12-bit systems; larger DO-41 requires PCB rework | Select only if cost sensitivity outweighs noise and tolerance requirements |
| MMSZ5240B (ON Semiconductor) | VZ = 10 V ±5%, rd = 17 Ω typical, SOD-123 surface-mount package | SMT-only; unsuitable for through-hole legacy designs; lower thermal mass affects transient stability | Choose for new SMT designs prioritizing board space over ultra-low noise |
Compared with BZX85C10 and MMSZ5240B, the HZ11B2TD-P-E delivers tighter voltage tolerance, significantly lower noise, and DO-35 compatibility-making it the preferred choice for upgrading existing through-hole precision references without compromising signal integrity.
Availability
HZ11B2TD-P-E is available at Aetrix Electronics and suitable for precision instrumentation, industrial data acquisition, and automotive sensor interface applications requiring stable component supply and long-term obsolescence management.
Supply support for HZ11B2TD-P-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor manufacturer specializing in microcontrollers, analog power devices, and timing solutions, with core expertise in automotive, industrial, and infrastructure markets.
The HZ-L Series was developed specifically for low-noise, high-stability voltage reference applications in analog signal chains where traditional Zener diodes introduce unacceptable noise floor elevation.
FAQ
What is the exact zener voltage range specified for HZ11B2TD-P-E?
The HZ11B2TD-P-E has a guaranteed zener voltage range of 10.4 V minimum to 10.8 V maximum when tested at IZ = 0.5 mA and Ta = 25°C. This 0.4 V window reflects its "B2" grade designation within the HZ-L family and is tighter than standard 5% tolerance Zeners.
Does HZ11B2TD-P-E support operation above 100°C ambient temperature?
Yes, the HZ11B2TD-P-E is rated for storage and operation from −55°C to +175°C junction temperature. At 100°C ambient, its usable power dissipation drops to approximately 240 mW per the derating curve in Figure 3, requiring appropriate PCB copper area for thermal management.
How does the noise performance of HZ11B2TD-P-E compare to standard Zener diodes?
The HZ11B2TD-P-E achieves approximately 1/3 to 1/10 the noise level of the legacy HZ series, as confirmed in Renesas documentation. This reduction is intrinsic to its silicon planar process and low-current optimization, making it suitable for sub-10 µVRMS noise-critical references.
Is HZ11B2TD-P-E compatible with automated through-hole insertion equipment?
Yes, the HZ11B2TD-P-E uses the standardized DO-35 package (JEITA GRZZ0002ZB-A) with 2.0 mm diameter and 26 mm length, fully compliant with IPC-7351B axial lead footprints and standard wave soldering and insertion tooling.
What is the maximum reverse leakage current for HZ11B2TD-P-E at 2.0 V?
The maximum reverse leakage current (IR) for HZ11B2TD-P-E is 1 µA when measured at VR = 2.0 V and Ta = 25°C. This low leakage ensures minimal error in high-impedance reference divider networks and preserves battery life in always-on sensor nodes.
HZ11B2TD-P-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- -
- Tolerance:
- -
- Power - Max:
- -
- Impedance (Max) (Zzt):
- -
- Current - Reverse Leakage @ Vr:
- -
- Voltage - Forward (Vf) (Max) @ If:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
HZ11B2TD-P-E FAQ
1.How can I place an order for HZ11B2TD-P-E through Aetrix?
Please submit a Request for Quotation (RFQ) for HZ11B2TD-P-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HZ11B2TD-P-E reliable?
The price and inventory of HZ11B2TD-P-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HZ11B2TD-P-E is usually 5 days.
3.What payment methods are accepted for HZ11B2TD-P-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HZ11B2TD-P-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HZ11B2TD-P-E?
HZ11B2TD-P-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HZ11B2TD-P-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HZ11B2TD-P-E?
For technical support, including HZ11B2TD-P-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HZ11B2TD-P-E requirements.
6.How does Aetrix verify that HZ11B2TD-P-E is sourced from the original manufacturer or authorized distributors?
All HZ11B2TD-P-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HZ11B2TD-P-E meets industry standards.
7.What is the process for return or replacement of HZ11B2TD-P-E?
All HZ11B2TD-P-E units undergo pre-shipment inspection (PSI). If there is an issue with HZ11B2TD-P-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HZ11B2TD-P-E part is unused and in its original packaging.
Return procedure for HZ11B2TD-P-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
HZ11B2TD-P-E Tags
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