Renesas HZ11B3L-E

Overview

HZ11B3L-E from Renesas is a silicon planar Zener diode engineered for low-noise voltage regulation in precision analog circuits, featuring a nominal zener voltage of 10.7–11.1 V at 0.5 mA test current, dynamic resistance of 80 Ω, maximum power dissipation of 400 mW, and junction temperature rating up to 175°C - deployed in reference supplies for ADCs, sensor signal conditioning, and low-drift instrumentation amplifiers.

For engineers reviewing the HZ11B3L-E datasheet, HZ11B3L-E pinout, HZ11B3L-E application, or HZ11B3L-E equivalent, key selection criteria include verified low-noise performance (1/3–1/10 lower than standard HZ series), DO-35 package compatibility with through-hole PCB layouts, zener voltage tolerance (±0.2 V at 10.9 V typ), and thermal stability across −55°C to +175°C storage range.

Technical Context

The HZ11B3L-E operates as a two-terminal shunt regulator with DC-tested zener breakdown characteristics, optimized for stable biasing in low-current, high-stability analog subsystems. Its planar construction ensures consistent junction behavior and reduced flicker noise versus diffused-junction alternatives.

Designed for operation at I_Z = 0.5 mA, it delivers predictable regulation with low leakage (<1 μA at V_R = 2.0 V) and tightly controlled dynamic impedance (80 Ω max), enabling accurate voltage references where thermal drift and noise floor are critical constraints.

Key Specifications

Pinout & Package

Package: DO-35 glass axial package (JEITA code SC-40), 2.0 mm diameter × 26.0 mm length, 0.13 g mass, orange body with navy-blue cathode band. Cathode identified by band; anode is opposite lead.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar zener diode applications.

Compared with 1N4740A and BZX85C11, the HZ11B3L-E provides tighter voltage tolerance (±0.2 V vs. ±5%), documented low-noise advantage (1/3–1/10 of HZ series), and DO-35 footprint ideal for space-constrained analog boards - making it optimal for precision, low-power, and thermally demanding applications.

Availability

HZ11B3L-E is available at Aetrix Electronics and suitable for precision ADC reference supplies, sensor excitation circuits, instrumentation amplifier bias networks, and low-power IoT node regulation requiring stable component supply with traceable sourcing and long-term lifecycle support.

Supply support for HZ11B3L-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, and power devices, with core expertise in high-reliability industrial and automotive electronics.

The HZ-L Series was developed specifically for low-noise, low-drift voltage reference applications in precision analog systems - targeting instrumentation, test equipment, and sensor interface designs where regulation stability and spectral purity are critical.

FAQ

What is the exact zener voltage range for HZ11B3L-E?

The HZ11B3L-E has a guaranteed zener voltage range of 10.7 V to 11.1 V when tested at I_Z = 0.5 mA and T_a = 25°C. This 0.4 V window reflects tight process control for precision reference use, and the typical value is 10.9 V. The specification is DC-tested per Renesas document REJ03G0182-0300 Rev.3.00.

Is HZ11B3L-E suitable for surface-mount assembly?

No - the HZ11B3L-E uses a DO-35 glass axial package with 2.0 mm diameter and 26.0 mm length, designed exclusively for through-hole mounting. It is not compatible with SMT reflow or wave soldering processes. For surface-mount equivalents, consider Renesas' HZ11B3L-SM variants or alternative SOD-123 packaged zeners with comparable specs.

What is the maximum reverse leakage current for HZ11B3L-E?

The maximum reverse leakage current (I_R) for HZ11B3L-E is 1 μA at V_R = 2.0 V and T_a = 25°C, as specified in the Electrical Characteristics table on page 2 of the Renesas datasheet REJ03G0182-0300. This low leakage supports high-impedance reference node integrity in battery-powered and precision analog designs.

Does HZ11B3L-E have a specified temperature coefficient?

Yes - Figure 2 in the Renesas datasheet shows the zener voltage temperature coefficient (γ_Z) for the HZ-L Series. For HZ11B3L-E (zener voltage ~10.9 V), γ_Z is approximately +0.04 %/°C (or +4.4 mV/°C), indicating positive drift with temperature. This value is derived from the published curve and applies across the full operating ambient range.

Can HZ11B3L-E replace standard HZ-series zeners in existing designs?

Yes - the HZ11B3L-E is a direct functional upgrade within the same DO-35 package and pinout as legacy HZ-series diodes. It offers identical mechanical fit and electrical interface but delivers significantly lower noise (1/3–1/10 of HZ series) and improved regulation stability, making it a drop-in enhancement for noise-sensitive analog circuits without layout changes.