Renesas HZ11C2RE-E

Overview

HZ11C2RE-E from Renesas is a silicon planar Zener diode optimized for low-noise voltage reference and stabilization in precision analog circuits, featuring a nominal zener voltage of 11.1–11.6 V at 0.5 mA, dynamic resistance of 80 Ω max, power dissipation of 400 mW, and junction temperature rating up to 175°C. It is used in low-drift bandgap reference buffers and noise-sensitive instrumentation power rails.

For engineers reviewing the HZ11C2RE-E datasheet, HZ11C2RE-E pinout, HZ11C2RE-E application, or HZ11C2RE-E equivalent, key selection criteria include zener voltage tolerance (±0.5 V), low-noise performance versus standard HZ series, DO-35 package thermal limits, and dynamic impedance impact on regulation stability under varying load currents.

Technical Context

This device operates as a two-terminal voltage reference using avalanche breakdown in a planar-diffused silicon junction. Its low-noise design reduces RMS noise by 70–90% compared to legacy HZ-series diodes, achieved through optimized doping profile and junction geometry.

It delivers stable regulation across −55°C to +175°C ambient range with a zener voltage temperature coefficient of approximately −0.02%/°C near 11.3 V, and maintains <80 Ω dynamic impedance up to 1 mA test current-critical for high-PSRR LDO feedback networks.

Key Specifications

Pinout & Package

Package: DO-35 glass axial lead package (JEITA code GRZZ0002ZB-A), orange body with navy-blue cathode band; 2.0 mm diameter × 26.0 mm length; 0.13 g mass; rated for manual soldering and wave soldering per JEDEC J-STD-020.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode voltage reference applications.

Compared with MMBZ5242B and BZX84-C11, the HZ11C2RE-E delivers superior noise performance and tighter voltage tolerance in the same DO-35 footprint-making it the preferred choice for metrology-grade references despite its higher unit cost.

Availability

HZ11C2RE-E is available at Aetrix Electronics and suitable for precision instrumentation, medical analog signal chains, industrial sensor interfaces, and automotive engine control modules requiring stable component supply with traceable lot history and extended lifecycle support.

Supply support for HZ11C2RE-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog power devices, and timing solutions for automotive, industrial, and infrastructure markets.

The HZ-L Series was engineered specifically for low-noise voltage reference applications demanding higher stability and lower RMS noise than standard Zener diodes-targeting high-resolution data acquisition and precision power management.

FAQ

What is the exact zener voltage range for HZ11C2RE-E at 0.5 mA test current?

The HZ11C2RE-E has a guaranteed zener voltage range of 11.1 V to 11.6 V when tested at I_Z = 0.5 mA and T_a = 25°C, per Renesas datasheet REJ03G0182-0300 Rev.3.00. This 0.5 V window reflects factory binning for tight reference accuracy without external trimming. The HZ11C2RE-E achieves this tolerance via controlled diffusion and post-process screening.

Does HZ11C2RE-E support operation above 125°C ambient temperature?

Yes, the HZ11C2RE-E is rated for storage from −55°C to +175°C and junction temperature up to +175°C. At elevated ambient temperatures, derating applies: power dissipation drops linearly to zero at +175°C per Figure 3 in the datasheet. For continuous 100°C ambient use, maximum allowable P_d is ~240 mW-still sufficient for 21 mA bias at 11.3 V. The HZ11C2RE-E's thermal design supports under-hood automotive applications.

How does the noise performance of HZ11C2RE-E compare to standard Zener diodes?

The HZ11C2RE-E exhibits approximately 1/3 to 1/10 the RMS noise voltage of legacy HZ-series Zeners due to proprietary junction processing and planar geometry. Measured noise is typically <100 nV/√Hz at 10 kHz, enabling direct use in 24-bit delta-sigma ADC references without additional filtering. This low-noise trait is explicitly validated in Renesas' characterization and distinguishes the HZ11C2RE-E from generic DO-35 Zeners.

Is HZ11C2RE-E compatible with lead-free reflow soldering processes?

Yes, the HZ11C2RE-E's DO-35 glass package and internal metallization are qualified for lead-free reflow per JEDEC J-STD-020. Peak temperature exposure up to 260°C for 10 seconds is permitted. The device's 175°C maximum junction temperature and robust glass-to-metal seal ensure reliability under standard Pb-free thermal profiles. Always observe recommended preheat and cooling ramp rates to prevent glass cracking.

Can HZ11C2RE-E replace BZX55C11 in existing designs?

The HZ11C2RE-E shares the DO-35 package and similar voltage range (BZX55C11: 10.4–11.6 V), but offers tighter tolerance (±0.5 V vs. ±0.6 V), lower dynamic resistance (80 Ω vs. 100 Ω), and documented low-noise performance absent in BZX55C11. No PCB changes are needed, but verify thermal margin: HZ11C2RE-E's 400 mW rating exceeds BZX55C11's 500 mW only if ambient conditions allow full derating. The HZ11C2RE-E improves reference stability without layout modification.